公开(公告)号：US20220178027A1

公开(公告)日：2022-06-09

申请号：US17448787

申请日：2021-09-24

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A.M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/18 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US11155919B2

公开(公告)日：2021-10-26

申请号：US16411964

申请日：2019-05-14

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/18 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US20170369997A1

公开(公告)日：2017-12-28

申请号：US15700494

申请日：2017-09-11

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A.M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/513 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.