公开(公告)号：US20170362709A1

公开(公告)日：2017-12-21

申请号：US15602514

申请日：2017-05-23

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A.M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/513 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US09273391B2

公开(公告)日：2016-03-01

申请号：US14311154

申请日：2014-06-20

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/513

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material, wherein the metal is zirconium. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

Abstract translation: 用于制备含金属薄膜的原子层沉积（ALD）型方法包括将含有环戊二烯基前体的金属脉冲作为金属源材料进料到反应空间气相中，其中金属是锆。 在优选的实施方案中，含金属环戊二烯基反应物的金属原子不直接键合到氧或卤素原子上。 在其它实施方案中，金属原子键合到环戊二烯基化合物上，并通过氮原子分别与至少一个配体结合。 在其它实施方案中，含有环戊二烯基化合物的金属包含氮桥连配体。

公开(公告)号：US20230307239A1

公开(公告)日：2023-09-28

申请号：US18190542

申请日：2023-03-27

Applicant: ASM IP Holding, B.V.

Inventor： Sean T. Barry ,  Goran Bacic ,  Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Peter Gordon

IPC: H01L21/285 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/45527 ,  C23C16/45553

Abstract: The current disclosure relates to vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. The disclosure further relates to materials and structures deposited by the disclosed methods, as well as deposition assemblies.

公开(公告)号：US20200024738A1

公开(公告)日：2020-01-23

申请号：US16411964

申请日：2019-05-14

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A.M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/18 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US09670582B2

公开(公告)日：2017-06-06

申请号：US15363998

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US09850575B1

公开(公告)日：2017-12-26

申请号：US15700494

申请日：2017-09-11

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/18 ,  C23C16/513

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US09677175B2

公开(公告)日：2017-06-13

申请号：US15006532

申请日：2016-01-26

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US10294563B2

公开(公告)日：2019-05-21

申请号：US15602514

申请日：2017-05-23

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US20170081762A1

公开(公告)日：2017-03-23

申请号：US15363998

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A.M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

公开(公告)号：US20160230277A1

公开(公告)日：2016-08-11

申请号：US15006532

申请日：2016-01-26

Applicant: ASM IP HOLDING B.V.

Inventor： Sean T. Barry ,  Yamile A.M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.