公开(公告)号：US11626316B2

公开(公告)日：2023-04-11

申请号：US16950899

申请日：2020-11-17

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Yan Zhang ,  Yoshio Susa ,  Atsuki Fukazawa

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/56

Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

公开(公告)号：US20210017648A1

公开(公告)日：2021-01-21

申请号：US16930211

申请日：2020-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/48 ,  C23C16/40

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US10811256B2

公开(公告)日：2020-10-20

申请号：US16161744

申请日：2018-10-16

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Tomohiro Kubota ,  Dai Ishikawa

IPC: H01L21/027 ,  H01L21/311 ,  H01J37/32

Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.