Abstract:
A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
Abstract:
Methods, computer program products and apparatuses for optimizing design rules for producing a mask are disclosed, while keeping the optical conditions (including but not limited to illumination shape, projection optics numerical aperture (NA) etc.) fixed. A cross-correlation function is created by multiplying the diffraction order functions of the mask patterns with the eigenfunctions from singular value decomposition (SVD) of a TCC matrix. The diffraction order functions are calculated for the original design rule set, i.e., using the unperturbed condition. ILS is calculated at an edge of a calculated image of a critical polygon using the cross-correlation results and using translation properties of a Fourier transform. Once an optimum separation is calculated, it is incorporated into the design rule to optimize the mask layout for improved ILS throughout the mask.