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1.发明授权公开(公告)号：US10670975B2
公开(公告)日：2020-06-02
申请号：US16061209
申请日：2016-11-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Robert John Socha , Arie Jeffrey Den Boef , Nitesh Pandey
Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.
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公开(公告)号：US10132763B2
公开(公告)日：2018-11-20
申请号：US14416484
申请日：2013-06-18
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Robert John Socha , Patricius Aloysius Jacobus Tinnemans , Jean-Pierre Agnes Henricus Marie Vaessen
IPC: G03B27/52 , G01N23/203 , G03F7/20 , H01J37/26
Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.
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公开(公告)号：US10670973B2
公开(公告)日：2020-06-02
申请号：US15573832
申请日：2016-04-29
Applicant: ASML Netherlands B.V.
Inventor： Yi Zou , Jing Su , Robert John Socha , Christopher Alan Spence , Duan-Fu Stephen Hsu
Abstract: A method includes obtaining a sub-layout having an area that is a performance limiting spot, adjusting colors of patterns in the area, and determining whether the area is still a performance limiting spot. Another method includes decomposing patterns in a design layout into multiple sub-layouts; determining for at least one area in one of the sub-layouts, the likelihood of that a figure of merit is beyond its allowed range; and if the likelihood is above a threshold, that one sub-layout has a performance limiting spot. Another method includes: obtaining a design layout having a first group of patterns and a second group of patterns, wherein colors of the first group of patterns are not allowed to change and colors of the second group of patterns are allowed to change; and co-optimizing at least the first group of patterns, the second group of patterns and an illumination of a lithographic apparatus.
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公开(公告)号：US11079684B2
公开(公告)日：2021-08-03
申请号：US16229009
申请日：2018-12-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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5.发明申请Inspection Method and Apparatus, Lithographic System and Device Manufacturing Method 审中-公开检验方法和仪器，平版印刷系统和器件制造方法公开(公告)号：US20150177166A1
公开(公告)日：2015-06-25
申请号：US14416484
申请日：2013-06-18
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Robert John Socha , Patricius Aloysius Jacobus Tinnemans , Jean-Pierre Agnes Henricus Marie Vaessen
IPC: G01N23/203 , G03F7/20 , H01J37/26
CPC classification number: G01N23/203 , G03F7/70058 , G03F7/70625 , H01J37/26
Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.
Abstract translation: 检查方法确定基板图案的轮廓参数的值。 产生具有基线图案目标（BP）的基准基底，其具有通过轮廓参数描述的轮廓，例如CD（中值临界尺寸），SWA（侧壁角）和RH（抗蚀剂高度）。 散射法用于获得第一和第二个目标的第一和第二信号。 使用贝叶斯差分成本函数，基于基线瞳孔和扰动瞳孔之间的差异以及瞳孔对图形轮廓参数的依赖性来计算微分图案轮廓参数的值。 例如，在光刻工艺的稳定性控制的基线工艺和扰动工艺之间测量差异。 前馈差分堆栈参数也是通过与模式目标相同的基板上的堆叠目标的观察来计算的。
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Patent Agency Ranking
公开(公告)号：US11966166B2
公开(公告)日：2024-04-23
申请号：US17377648
申请日：2021-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
CPC classification number: G03F7/70425 , G03F7/705 , G03F7/70516 , G03F7/70633 , G03F7/70683 , G03F7/7085 , G03F9/7046 , G03F9/7088 , G06F30/39
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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公开(公告)号：US10054862B2
公开(公告)日：2018-08-21
申请号：US15179509
申请日：2016-06-10
Applicant: ASML Netherlands B.V.
Inventor： Anton Bernhard Van Oosten , Paul Christiaan Hinnen , Robertus Cornelis Martinus De Kruif , Robert John Socha
CPC classification number: G03F7/70558 , G03F1/44 , G03F7/70516 , G03F7/70525 , G03F7/70625 , G03F7/70641
Abstract: Disclosed is a method of monitoring a focus parameter during a lithographic process. The method comprises acquiring first and second measurements of, respectively first and second targets, wherein the first and second targets have been exposed with a relative best focus offset. The method then comprises determining the focus parameter from first and second measurements. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.
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公开(公告)号：US10996571B2
公开(公告)日：2021-05-04
申请号：US16856128
申请日：2020-04-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Robert John Socha , Arie Jeffrey Den Boef , Nitesh Pandey
IPC: G03F7/20 , G01N21/956 , G01B11/27 , G01N21/88
Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.
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公开(公告)号：US10437158B2
公开(公告)日：2019-10-08
申请号：US16060192
申请日：2016-12-16
Applicant: ASML Netherlands B.V.
Inventor： Robert John Socha
Abstract: Disclosed herein is a method comprising: obtaining a plurality of measurement results from a pattern on a substrate respectively using a plurality of substrate measurement recipes, the substrate processed by a lithography process; reconstruct, using a computer, the pattern using the plurality of measurement results, to obtain a reconstructed pattern.
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10.发明授权公开(公告)号：US10417359B2
公开(公告)日：2019-09-17
申请号：US15379473
申请日：2016-12-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Robert John Socha , Thomas I. Wallow
Abstract: A process of calibrating a model, the process including: obtaining training data including: scattered radiation information from a plurality of structures, individual portions of the scattered radiation information being associated with respective process conditions being characteristics of a patterning process of the individual structures; and calibrating a model with the training data by determining a ratio relating a change in one of the process characteristics to a corresponding change in scattered radiation information.
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