公开(公告)号：US12007697B2

公开(公告)日：2024-06-11

申请号：US17836066

申请日：2022-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Bert Verstraeten ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes

IPC: G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70641

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

公开(公告)号：US11520239B2

公开(公告)日：2022-12-06

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11262661B2

公开(公告)日：2022-03-01

申请号：US16431833

申请日：2019-06-05

Applicant: ASML Netherlands B.V.

Inventor： Nitesh Pandey ,  Arie Jeffrey Den Boef ,  Duygu Akbulut ,  Marinus Johannes Maria Van Dam ,  Hans Butler ,  Hugo Augustinus Joseph Cramer ,  Engelbertus Antonius Fransiscus Van Der Pasch ,  Ferry Zijp ,  Jeroen Arnoldus Leonardus Johannes Raaymakers ,  Marinus Petrus Reijnders

IPC: G01N21/956 ,  G03F7/20

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

公开(公告)号：US11145557B2

公开(公告)日：2021-10-12

申请号：US16790809

申请日：2020-02-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer

IPC: G06F30/392 ,  H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

公开(公告)号：US11101185B2

公开(公告)日：2021-08-24

申请号：US16720393

申请日：2019-12-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

公开(公告)号：US10151985B2

公开(公告)日：2018-12-11

申请号：US15377979

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Remco Dirks ,  Seyed Iman Mossavat ,  Hugo Augustinus Joseph Cramer

IPC: G03F7/20 ,  G06F17/50

Abstract: A method including determining one or more statistical features from data obtained from a lithography process, a lithography apparatus, a substrate processed by the lithography process or the lithography apparatus, wherein determining the one or more statistical features does not include reconstructing a characteristic of the lithography process, of the lithography apparatus, or of the substrate.

公开(公告)号：US20150293458A1

公开(公告)日：2015-10-15

申请号：US14648445

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。

公开(公告)号：US12142535B2

公开(公告)日：2024-11-12

申请号：US15445465

申请日：2017-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer

IPC: G01N21/95 ,  G03F7/00 ,  G03F9/00 ,  H01L21/66

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

公开(公告)号：US20230042759A1

公开(公告)日：2023-02-09

申请号：US17968352

申请日：2022-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11556060B2

公开(公告)日：2023-01-17

申请号：US16556637

申请日：2019-08-30

Applicant: ASML Netherlands B.V.

Inventor： Seyed Iman Mossavat ,  Bastiaan Onne Fagginger Auer ,  Remco Dirks ,  Alexandru Onose ,  Hugo Augustinus Joseph Cramer

IPC: G03F7/20 ,  G05B13/02 ,  H01L21/66

Abstract: Methods for calibrating metrology apparatuses and determining a parameter of interest are disclosed. In one arrangement, training data is provided that comprises detected representations of scattered radiation detected by each of plural metrology apparatuses. An encoder encodes each detected representation to provide an encoded representation, and a decoder generates a synthetic detected representation from the respective encoded representation. A classifier estimates from which metrology apparatus originates each encoded representation or each synthetic detected representation. The training data is used to simultaneously perform, in an adversarial relationship relative to each other, a first machine learning process involving the encoder or decoder and a second machine learning process involving the classifier.