公开(公告)号：US20150293458A1

公开(公告)日：2015-10-15

申请号：US14648445

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。

公开(公告)号：US10222703B2

公开(公告)日：2019-03-05

申请号：US15653380

申请日：2017-07-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Heine Melle Mulder ,  Johannes Jacobus Matheus Baselmans ,  Adrianus Franciscus Petrus Engelen ,  Markus Franciscus Antonius Eurlings ,  Hendrikus Robertus Marie Van Greevenbroek ,  Paul Van Der Veen ,  Patricius Aloysius Jacobus Tinnemans ,  Wilfred Edward Endendijk

IPC: G03B27/52 ,  G03B27/42 ,  G03F7/20

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

公开(公告)号：US09778575B2

公开(公告)日：2017-10-03

申请号：US14988944

申请日：2016-01-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Heine Melle Mulder ,  Johannes Jacobus Matheus Baselmans ,  Adrianus Franciscus Petrus Engelen ,  Markus Franciscus Antonius Eurlings ,  Hendrikus Robertus Marie Van Greevenbroek ,  Paul Van Der Veen ,  Patricius Aloysius Jacobus Tinnemans ,  Wilfred Edward Endendijk

IPC: G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70058 ,  G03F7/70116 ,  G03F7/702 ,  G03F7/70216

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

公开(公告)号：US09964853B2

公开(公告)日：2018-05-08

申请号：US14648445

申请日：2013-11-22

Applicant: ASML Netherlands B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03B27/52 ,  G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

公开(公告)号：US09285685B2

公开(公告)日：2016-03-15

申请号：US14261208

申请日：2014-04-24

Applicant: ASML NETHERLANDS B.V. ,  CARL ZEISS SMT GmbH

Inventor： Bob Streefkerk ,  Johannes Jacobus Matheus Baselmans ,  Adrianus Franciscus Petrus Engelen ,  Jozef Maria Finders ,  Paul Gräupner ,  Johannes Catharinus Hubertus Mulkens ,  Jan Bernard Plechelmus Van Schoot

IPC: G03B27/52 ,  G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/70333

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract translation: 在浸没光刻设备或设备制造方法中，在成像期间投影图像的焦点位置改变以增加焦点宽度。 在一个实施例中，焦点可以使用浸没式光刻设备的液体供应系统来改变。