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公开(公告)号：US20240004283A1
公开(公告)日：2024-01-04
申请号：US18227833
申请日：2023-07-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles ABEGG , Nirupam BANERJEE , Michiel Alexander BLAUW , Derk Servatius Gertruda BROUNS , Paul JANSSEN , Matthias KRUIZINGA , Egbert LENDERINK , Nicolae MAXIM , Andrey NIKIPELOV , Arnoud Willem NOTENBOOM , Claudia PILIEGO , Mária PÉTER , Gijsbert RISPENS , Nadja SCHUH , Marcus Adrianus VAN DE KERKHOF , Willem Joan VAN DER ZANDE , Pieter-Jan VAN ZWOL , Antonius Willem VERBURG , Johannes Petrus Martinus Bernardus VERMEULEN , David Ferdinand VLES , Willem-Pieter VOORTHUIJZEN , Aleksandar Nikolov ZDRAVKOV
CPC classification number: G03F1/62 , G03F7/70191 , G03F7/70983 , G03F1/82 , G03F7/70916 , G03F7/70958 , G03F7/70575 , G02B5/208 , G02B5/283
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US20220121111A1
公开(公告)日：2022-04-21
申请号：US17548944
申请日：2021-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： David Ferdinand VLES , Chaitanya Krishna ANDE , Antonius Franciscus Johannes DE GROOT , Adrianus Johannes Maria GIESBERS , Johannes Joseph JANSSEN , Paul JANSSEN , Johan Hendrik KLOOTWIJK , Peter Simon Antonius KNAPEN , Evgenia KURGANOVA , Marcel Peter MEIJER , Wouter Rogier MEIJERINK , Maxim Aleksandrovich NASALEVICH , Arnoud Willem NOTENBOOM , Raymond OLSMAN , Hrishikesh PATEL , Mária PÉTER , Gerrit VAN DEN BOSCH , Wilhelmus Theodorus Anthonius Johannes VAN DEN EINDEN , Willem Joan VAN DER ZANDE , Pieter-Jan VAN ZWOL , Johannes Petrus Martinus Bernardus VERMEULEN , Willem-Pieter VOORTHUIJZEN , Hendrikus Jan WONDERGEM , Aleksandar Nikolov ZDRAVKOV
IPC: G03F1/64
Abstract: The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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13.发明申请公开(公告)号：US20200159107A1
公开(公告)日：2020-05-21
申请号：US16634910
申请日：2018-06-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Evgenia KURGANOVA , Adrianus Johannes Maria GIESBERS , Maxim Aleksandrovich NASALEVICH , Arnoud Willem NOTENBOOM , Mária PÉTER , Pieter-Jan VAN ZWOL , David Ferdinand VLES , Willem-Pieter VOORTHUIJZEN
IPC: G03F1/62 , G03F1/38 , G03F7/20 , C01B32/186 , G02B5/08 , H01L21/027
Abstract: A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.
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公开(公告)号：US20190011828A1
公开(公告)日：2019-01-10
申请号：US16060635
申请日：2016-12-02
Applicant: ASML NETHERLANDS B.V
Inventor： Pieter-Jan VAN ZWOL , Dennis DE GRAAF , Paul JANSSEN , Mária PÉTER , Marcus Adrianus VAN DE KERKHOF , Willem Joan VAN DER ZANDE , David Ferdinand VLES , Willem-Pieter VOORTHUIJZEN
Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.
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