公开(公告)号：US06706543B2

公开(公告)日：2004-03-16

申请号：US10196208

申请日：2002-07-17

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A method and system are provided for controlling and/or monitoring a semiconductor processing apparatus while predicting its processing results. The system includes a sensor for monitoring a processing state of the processing apparatus, a sensed data storage unit for preserving sensed data sent from the sensor, an input device for inputting measured values for processing results of semiconductor devices processed by the processing apparatus, a processing result measured value storage unit for preserving the inputted processing result measured values, a model equation generation unit for generating a model equation from preserved sensed data and processing result measured values, a model equation storage unit for preserving the generated model equation, a model equation based prediction unit for predicting processing results from the preserved model equation and the sensed data, and a process recipe control unit for controlling processing conditions of the processing apparatus from predicted processing results.

摘要翻译： 提供一种用于在预测其处理结果的同时控制和/或监视半导体处理装置的方法和系统。 该系统包括用于监视处理装置的处理状态的传感器，用于保存从传感器发送的感测数据的感测数据存储单元，用于输入用于处理由处理装置处理的半导体装置的处理结果的测量值的输入装置， 结果测量值存储单元，用于保存输入的处理结果测量值;模型方程生成单元，用于从保存的感测数据和处理结果测量值生成模型方程;模型方程式存储单元，用于保存生成的模型方程;基于模型方程 预测单元，用于从保存的模型方程和感测数据预测处理结果;以及处理配方控制单元，用于根据预测的处理结果控制处理装置的处理条件。

公开(公告)号：US07058470B2

公开(公告)日：2006-06-06

申请号：US10999006

申请日：2004-11-30

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： G06F19/00

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter. The process recipe control unit includes a controller which controls at least one of a plurality of different processing performances for processing of the semiconductor wafer.

摘要翻译： 用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测的处理结果与预先设定的值进行比较，以控制处理条件或输入参数。 处理配方控制单元包括控制器，用于控制用于处理半导体晶片的多个不同处理性能中的至少一个。

公开(公告)号：US20050087298A1

公开(公告)日：2005-04-28

申请号：US10999006

申请日：2004-11-30

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： G05B19/418 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition. The process recipe control unit includes a controller which controls at least one among a plurality of different processing performances for processing of the semiconductor wafer.

摘要翻译： 用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测处理结果与预先设定的值进行比较，以控制处理条件。 处理配方控制单元包括控制用于处理半导体晶片的多个不同处理性能中的至少一个的控制器。

公开(公告)号：US06616759B2

公开(公告)日：2003-09-09

申请号：US09946732

申请日：2001-09-06

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamato ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamato ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： B05C1302

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A method and system are provided for controlling and/or monitoring a semiconductor processing apparatus while predicting its processing results. The system includes a sensor for monitoring a processing state of the processing apparatus, a sensed data storage unit for preserving sensed data sent from the sensor, an input device for inputting measured values for processing results of semiconductor devices processed by the processing apparatus, a processing result measured value storage unit for preserving the inputted processing result measured values, a model equation generation unit for generating a model equation from preserved sensed data and processing result measured values, a model equation storage unit for preserving the generated model equation, a model equation based prediction unit for predicting processing results from the preserved model equation and the sensed data, and a process recipe control unit for controlling processing conditions of the processing apparatus from predicted processing results.

摘要翻译： 提供一种用于在预测其处理结果的同时控制和/或监视半导体处理装置的方法和系统。 该系统包括用于监视处理装置的处理状态的传感器，用于保存从传感器发送的感测数据的感测数据存储单元，用于输入用于处理由处理装置处理的半导体装置的处理结果的测量值的输入装置， 结果测量值存储单元，用于保存输入的处理结果测量值;模型方程生成单元，用于从保存的感测数据和处理结果测量值生成模型方程;模型方程式存储单元，用于保存生成的模型方程;基于模型方程 预测单元，用于从保存的模型方程和感测数据预测处理结果;以及处理配方控制单元，用于根据预测的处理结果控制处理装置的处理条件。

公开(公告)号：US20050284574A1

公开(公告)日：2005-12-29

申请号：US11217287

申请日：2005-09-02

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Akira Kagoshima

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Akira Kagoshima

IPC分类号： H01L21/3065 ,  C23F1/00 ,  H01L21/00 ,  H01L21/26 ,  H01L21/306

CPC分类号： H01L21/67103 ,  H01J37/32522 ,  H01L21/67248

摘要： A plasma processing apparatus includes a vacuum processing vessel constituting a vacuum processing chamber, a processing gas supply unit supplying a processing gas to the vacuum vessel, a plasma generator generating plasma by supplying electromagnetic energy to the vacuum vessel and dissociating the processing gas supplied thereto so as to process a wafer, and a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber. The control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to performing the present wafer processing.

摘要翻译： 等离子体处理装置包括构成真空处理室的真空处理容器，向真空容器供给处理气体的处理气体供给单元，通过向真空容器供给电磁能并将供给的处理气体解离的等离子体发生器来产生等离子体 以及用于控制真空处理室的内表面温度的处理室表面温度控制单元。 控制单元基于以下（a）从紧接着的批次处理结束起的空闲时间，（b）紧接着的批次处理的处理能力（c），控制真空处理室的内表面温度 ）紧接在前的批次处理的处理压力，以及（d）在执行本晶片处理之前，正在处理之前的批次处理的多个晶片。

公开(公告)号：US06939435B1

公开(公告)日：2005-09-06

申请号：US10875213

申请日：2004-06-25

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Akira Kagoshima

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Akira Kagoshima

IPC分类号： H01L21/3065 ,  C23F1/00 ,  H01L21/00 ,  H01L21/26 ,  H01L21/306

CPC分类号： H01L21/67103 ,  H01J37/32522 ,  H01L21/67248

摘要： The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel 1a constituting the processing chamber 1, process gas supply devices 3, 4 for supplying processing gas to the processing chamber 1, and a plasma generating means 2 for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit 15 for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.

摘要翻译： 本发明提供一种能够保持恒定的处理轮廓的等离子体处理装置和处理方法。 用于向放置在处理室中的晶片提供等离子体处理的等离子体处理装置包括构成处理室1的处理容器1 a，用于向处理室1供应处理气体的处理气体供应装置3,4以及等离子体产生 用于通过向处理室供应电磁能并解离供给到处理室的处理气体来产生等离子体的装置2，其中该装置还包括处理室表面温度控制单元15，用于控制处理室的内表面温度，控制 通过在终止清洁处理之后和在执行晶片处理之前基于处理历史在腔室中产生等离子体预定处理时间来加热处理室的内表面来控制温度的单元。

公开(公告)号：US20050189070A1

公开(公告)日：2005-09-01

申请号：US10875213

申请日：2004-06-25

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Akira Kagoshima

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Akira Kagoshima

IPC分类号： H01L21/3065 ,  C23F1/00 ,  H01L21/00 ,  H01L21/26 ,  H01L21/306

CPC分类号： H01L21/67103 ,  H01J37/32522 ,  H01L21/67248

摘要： The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel 1a constituting the processing chamber 1, process gas supply devices 3, 4 for supplying processing gas to the processing chamber 1, and a plasma generating means 2 for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit 15 for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.

摘要翻译： 本发明提供一种能够保持恒定的处理轮廓的等离子体处理装置和处理方法。 用于向放置在处理室中的晶片提供等离子体处理的等离子体处理装置包括构成处理室1的处理容器1 a，用于向处理室1供应处理气体的处理气体供应装置3,4以及等离子体产生 用于通过向处理室供应电磁能并解离供给到处理室的处理气体来产生等离子体的装置2，其中该装置还包括处理室表面温度控制单元15，用于控制处理室的内表面温度，控制 通过在终止清洁处理之后和在执行晶片处理之前基于处理历史在腔室中产生等离子体预定处理时间来加热处理室的内表面来控制温度的单元。

公开(公告)号：US06916396B2

公开(公告)日：2005-07-12

申请号：US10224652

申请日：2002-08-21

申请人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

发明人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/66 ,  H05H1/00

CPC分类号： H01L21/67253 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/32137 ,  H01L22/20

摘要： An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etching step, affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe, and which generates a recipe to be applied to the residual etching step on the basis of the results of processing. Etching processing is conducted according to the recipes generated by the recipe generating means.

摘要翻译： 用于对单个膜进行蚀刻的蚀刻系统涉及多个蚀刻步骤，其中应用各自不同的配方。 蚀刻系统使用配方生成装置，其将要应用于最终蚀刻步骤的配方固定到蚀刻步骤的下一个膜，以将蚀刻步骤的蚀刻膜与下一个膜接触到预设配方，并且生成配方 基于处理结果应用于残留蚀刻步骤。 根据食谱产生装置产生的配方进行蚀刻处理。

公开(公告)号：US20050236364A1

公开(公告)日：2005-10-27

申请号：US11154698

申请日：2005-06-17

申请人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

发明人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/302

CPC分类号： H01L21/67253 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/32137 ,  H01L22/20

摘要： An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching steps which affects an underlying film making contact with the single film to be etched, generating different recipes other than the preset recipe to be applied to other etching steps of the plurality of etching steps, wherein at least one of the different recipes for the other etching steps is generated on the basis of processed results, and conducting etching of the single film according to the recipes generated.

摘要翻译： 一种蚀刻方法，用于对单个膜进行蚀刻以基于各自不同的配方的多个蚀刻步骤进行的蚀刻，包括以下步骤：产生和固定作为要应用于多个蚀刻步骤的蚀刻步骤的预设配方的配方 蚀刻步骤，其影响与待蚀刻的单个膜接触的底层膜，产生除了应用于多个蚀刻步骤的其它蚀刻步骤的预设配方之外的不同配方，其中至少一个不同的配方用于另一个 基于处理结果产生蚀刻步骤，并根据生成的配方对单个膜进行蚀刻。

公开(公告)号：US20060199288A1

公开(公告)日：2006-09-07

申请号：US11429199

申请日：2006-05-08

申请人： Junichi Tanaka ,  Toshio Masuda ,  Akira Kagoshima ,  Shoji Ikuhara ,  Hideyuki Yamamoto

发明人： Junichi Tanaka ,  Toshio Masuda ,  Akira Kagoshima ,  Shoji Ikuhara ,  Hideyuki Yamamoto

IPC分类号： H01L21/66

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L22/34

摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.

摘要翻译： 通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。 与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。 信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理 的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。