公开(公告)号：US20060199288A1

公开(公告)日：2006-09-07

申请号：US11429199

申请日：2006-05-08

申请人： Junichi Tanaka ,  Toshio Masuda ,  Akira Kagoshima ,  Shoji Ikuhara ,  Hideyuki Yamamoto

发明人： Junichi Tanaka ,  Toshio Masuda ,  Akira Kagoshima ,  Shoji Ikuhara ,  Hideyuki Yamamoto

IPC分类号： H01L21/66

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L22/34

摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.

摘要翻译： 通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。 与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。 信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理 的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。

公开(公告)号：US06881352B2

公开(公告)日：2005-04-19

申请号：US10350061

申请日：2003-01-24

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： H05H1/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/00

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

摘要翻译： 一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。 控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型 传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果 成为目标值。 基于由最佳配方计算模型生成的配方来控制等离子体处理器。

公开(公告)号：US07601240B2

公开(公告)日：2009-10-13

申请号：US11346298

申请日：2006-02-03

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

摘要翻译： 等离子体处理系统包括：基于等离子体处理的配方对样品进行等离子体处理的第一单元;以及用于根据在第一单元中的样品的等离子体处理期间获得的监视值修改配方的第二单元。 基于改进的配方，下一个样品在第一单元中进行等离子体处理。

公开(公告)号：US20090120580A1

公开(公告)日：2009-05-14

申请号：US12351159

申请日：2009-01-09

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： C23F1/08

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe.

摘要翻译： 等离子体处理装置包括用于对样品进行多步骤处理操作的真空处理装置，用于在处理操作的至少第一步骤中监视处理参数的传感器，用于将来自传感器的信号压缩到 生成装置状态信号，工作结果估计模型单元，其基于装置状态信号和设定的处理结果估计方程估计处理结果;最佳配方计算模型单元，其计算对处理条件的校正，使得处理 结果成为目标值，判定最佳配方的有效性的可用配方选择单元。 在处理操作的下一步骤中，基于由所选择的可用食谱选择的可用食谱，在最佳条件下进行样品处理。

公开(公告)号：US07343217B2

公开(公告)日：2008-03-11

申请号：US11439265

申请日：2006-05-24

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： G06F19/00

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.

摘要翻译： 用于处理半导体晶片的半导体处理装置包括用于监视处理状态的多个传感器，处理结果输入单元，用于生成用于预测处理结果的模型方程式的模型方程生成单元，预测处理结果预测单元 处理结果，以及处理配方控制单元。 此外，提供了一种系统，其包括在远程位置处提供模型方程生成单元，并且通过网络将生成的预测模型方程发送到半导体处理装置，以通过处理配方控制来控制半导体处理装置的处理状态 单元。

公开(公告)号：US20070193687A1

公开(公告)日：2007-08-23

申请号：US11783653

申请日：2007-04-11

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： H01L21/306

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing control system includes a plasma processing apparatus for generating plasma within a vacuum processing chamber and performing a processing operation over a sample accommodated within the vacuum processing chamber using radicals and ions within the plasma, a pre-measuring instrument which measures a shape of the sample before processing, a post-measuring instrument which measures a shape of the sample after the processing, a parameter changer provided with at least one optimum recipe model for calculating a target process parameter, and a model changer for modifying the optimum recipe model, thereby updating a recipe parameter for each etching.

摘要翻译： 一种等离子体处理控制系统包括：等离子体处理装置，用于在真空处理室内产生等离子体，并使用等离子体内的自由基和离子对容纳在真空处理室内的样品进行处理操作;测量仪器，其测量形状 处理前的样品，测量处理后的样品的形状的后测量仪器，设置有至少一个用于计算目标过程参数的最佳配方模型的参数改变器，以及用于修改最佳配方模型的模型变换器， 从而更新每个蚀刻的配方参数。

公开(公告)号：US20060124243A1

公开(公告)日：2006-06-15

申请号：US11346298

申请日：2006-02-03

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

公开(公告)号：US07062347B2

公开(公告)日：2006-06-13

申请号：US10434213

申请日：2003-05-09

申请人： Hideyuki Yamamoto ,  Toshio Masuda ,  Shoji Ikuhara ,  Akira Kagoshima ,  Junichi Tanaka

发明人： Hideyuki Yamamoto ,  Toshio Masuda ,  Shoji Ikuhara ,  Akira Kagoshima ,  Junichi Tanaka

IPC分类号： G06F19/00

CPC分类号： H01J37/32862 ,  H01J37/32935

摘要： For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.

公开(公告)号：US20050022932A1

公开(公告)日：2005-02-03

申请号：US10933413

申请日：2004-09-03

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： H05H1/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing control system for a plasma processing apparatus having a plasma processor for performing a plasma processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during the processing operation, a unit for providing a processed-result estimation model which estimates a processed result on the basis of a monitored output from the sensor and a preset processed-result estimation equation, a unit for providing an optimum recipe calculation model which calculates corrections to the processing conditions so that the processed result becomes a target value on the basis of the estimated result of the processed-result estimation model, and a unit for causing the processing apparatus to process the sample under the optimum processing conditions in the next processing step on the basis of a recipe generated from the optimum recipe calculation model.

摘要翻译： 一种用于等离子体处理装置的等离子体处理控制系统，其具有用于对容纳在真空处理室内的样品进行等离子体处理操作的等离子体处理装置，用于在处理操作期间监视处理参数的传感器，用于提供处理结果估计的单元 模型，其基于来自传感器的监视输出和预设处理结果估计方程来估计处理结果;单元，用于提供最佳配方计算模型，其计算对处理条件的校正，使得处理结果变为目标值 基于处理结果估计模型的估计结果，以及用于使处理装置根据从最佳配方计算模型生成的配方在下一个处理步骤中的最佳处理条件下处理样本的单元 。

公开(公告)号：US06745096B2

公开(公告)日：2004-06-01

申请号：US09946621

申请日：2001-09-06

申请人： Hideyuki Yamamoto ,  Toshio Masuda ,  Shoji Ikuhara ,  Akira Kagoshima ,  Junichi Tanaka

发明人： Hideyuki Yamamoto ,  Toshio Masuda ,  Shoji Ikuhara ,  Akira Kagoshima ,  Junichi Tanaka

IPC分类号： G06F1900

CPC分类号： H01J37/32862 ,  H01J37/32935

摘要： For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.

摘要翻译： 为了在通过使用等离子体处理真空处理室中的样品的等离子体处理装置进行湿式清洗之后进行维护，当对真空处理室构成的构件进行湿式清洗之后的恢复处理是在对大气开放的真空处理室的情况下进行的， 根据设备固有的预定最佳顺序，自动或半自动判断恢复处理是否合适，根据结果自动或半自动地开始下一个处理。