公开(公告)号：US07956432B2

公开(公告)日：2011-06-07

申请号：US12365141

申请日：2009-02-03

申请人： Dong Zheng ,  Phillip J. Benzel ,  Joy Jones ,  Alexander Kalnitsky ,  Perumal Ratnam

发明人： Dong Zheng ,  Phillip J. Benzel ,  Joy Jones ,  Alexander Kalnitsky ,  Perumal Ratnam

IPC分类号： H01L21/02

CPC分类号： H01L27/1462 ,  H01L27/1463 ,  H01L31/02165

摘要： A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.

摘要翻译： 光电二极管包括在其至少一部分上具有第一半导体型表面区域的基板和形成在表面区域的一部分中的第二半导体型表面层。 多层抗反射涂层（ARC）在第二半导体型表面层上，其中多层ARC包括至少两个不同的电介质层。 耐氧化物蚀刻的层在多层ARC的外围部分之上。 另外的层在耐氧化物蚀刻层上方，并且因此在多层ARC的周边部分之上。 一个窗口向下延伸到多层ARC。 光电二极管区域由第一半导体型表面区域和第二半导体型表面层的pn结形成。

公开(公告)号：US07960807B2

公开(公告)日：2011-06-14

申请号：US11686311

申请日：2007-03-14

申请人： Xijian Lin ,  Phillip J. Benzel ,  Bjoy Santos ,  Joy Jones

发明人： Xijian Lin ,  Phillip J. Benzel ,  Bjoy Santos ,  Joy Jones

IPC分类号： H01L31/0232

CPC分类号： G01J1/4228 ,  G01J1/0488 ,  G01J1/4204 ,  G01J3/465 ,  G01J3/513 ,  G01J2003/516 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H04N9/045

摘要： A CMOS light detector configured to detect specific wavelengths of light includes a first sensor and a second sensor. The first sensor includes CMOS photocells that are covered by a colored filter layer of a first color that has a first transmittance that allows both light of the specific wavelengths and light of other wavelengths to pass. The second sensor including further CMOS photocells, at least some of which are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color has a second transmittance that allows light of the other wavelengths to pass. The first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light including both the specific and other wavelengths is incident upon the detector. A differential photocurrent, produced by determining a difference between the first and second photocurrents, has a spectral response with at least part of the light of other wavelengths cancelled.

摘要翻译： 被配置为检测特定波长的光的CMOS光检测器包括第一传感器和第二传感器。 第一传感器包括由具有第一透射率的第一颜色的着色滤光层覆盖的CMOS光电管，其允许特定波长的光和其它波长的光通过。 第二传感器包括进一步的CMOS光电管，其中至少一些由第一颜色的有色滤光层和第二颜色的有色滤光层两者以任何顺序叠加在一起，其中彩色滤光层 第二种颜色具有允许其它波长的光通过的第二透射率。 第一传感器产生第一光电流，并且当包括特定波长和其它波长的光入射到检测器上时，第二传感器产生第二光电流。 通过确定第一和第二光电流之间的差产生的差分光电流具有光谱响应，其中至少部分其它波长的光被消除。

公开(公告)号：US20110068255A1

公开(公告)日：2011-03-24

申请号：US12885297

申请日：2010-09-17

申请人： Dong Zheng ,  Xijian Lin ,  Joy Jones

发明人： Dong Zheng ,  Xijian Lin ,  Joy Jones

IPC分类号： H01L27/144

CPC分类号： H01L27/1446 ,  G01J1/0488 ,  G01J1/4204 ,  G01J1/4228 ,  H01L27/14621 ,  H01L27/14623

摘要： A photodetector includes one or more first photodiode regions that are covered by an optical filter configured to reject infrared (IR) light and that produce a first current (I1). The photodetector also includes one or more second photodiode regions that are covered by a light blocking material configured to reject visible and infrared light and that produce a second current (I2). The photodetector also includes one or more third photodiode regions that are not covered by the optical filter and are not covered by the light blocking material and that produce a third current (I3). Additionally, the photodetector includes circuitry configured to produce an output indicative of the first current (I1) or a scaled version of the first current (I1), minus the second current (I2) or a scaled version of the second current (I2), minus the third current (I3) or a scaled version of the third current (I3). The optical filter configured to reject IR light can be, e.g., a dielectric reflective optical coating filter, an IR absorption optical coating filter, or a combination thereof.

摘要翻译： 光电检测器包括一个或多个第一光电二极管区域，其被被配置为抑制红外（IR）光并且产生第一电流（I1））的滤光器覆盖。 光电检测器还包括被遮光材料覆盖的一个或多个第二光电二极管区域，所述遮光材料构造成阻止可见光和红外光并产生第二电流（I2）。 光电检测器还包括一个或多个未被光学滤波器覆盖并且不被遮光材料覆盖并且产生第三电流（I3）的第三光电二极管区域。 另外，光电检测器包括经配置以产​​生指示第一电流（I1）或第一电流（I1）的缩放版本，减去第二电流（I2）或第二电流（I2）的缩放版本的输出的输出， 减去第三个电流（I3）或第三个电流（I3）的缩放版本。 被配置为抑制IR光的滤光器可以是例如介电反射光学涂层滤光器，IR吸收光学涂层滤光器或其组合。

公开(公告)号：US08492699B2

公开(公告)日：2013-07-23

申请号：US12885297

申请日：2010-09-17

申请人： Dong Zheng ,  Xijian Lin ,  Joy Jones

发明人： Dong Zheng ,  Xijian Lin ,  Joy Jones

IPC分类号： G01J1/44 ,  H01J5/16 ,  H03F3/08

CPC分类号： H01L27/1446 ,  G01J1/0488 ,  G01J1/4204 ,  G01J1/4228 ,  H01L27/14621 ,  H01L27/14623

摘要： A photodetector includes one or more first photodiode regions that are covered by an optical filter configured to reject infrared (IR) light and that produce a first current (I1). The photodetector also includes one or more second photodiode regions that are covered by a light blocking material configured to reject visible and infrared light and that produce a second current (I2). The photodetector also includes one or more third photodiode regions that are not covered by the optical filter and are not covered by the light blocking material and that produce a third current (I3). Additionally, the photodetector includes circuitry configured to produce an output indicative of the first current (I1) or a scaled version of the first current (I1), minus the second current (I2) or a scaled version of the second current (I2), minus the third current (I3) or a scaled version of the third current (I3). The optical filter configured to reject IR light can be, e.g., a dielectric reflective optical coating filter, an IR absorption optical coating filter, or a combination thereof.

摘要翻译： 光电检测器包括一个或多个第一光电二极管区域，其被被配置为抑制红外（IR）光并且产生第一电流（I1））的滤光器覆盖。 光电检测器还包括被遮光材料覆盖的一个或多个第二光电二极管区域，所述遮光材料构造成阻止可见光和红外光并产生第二电流（I2）。 光电检测器还包括一个或多个未被光学滤波器覆盖并且不被遮光材料覆盖并且产生第三电流（I3）的第三光电二极管区域。 另外，光电检测器包括经配置以产​​生指示第一电流（I1）或第一电流（I1）的缩放版本，减去第二电流（I2）或第二电流（I2）的缩放版本的输出的输出， 减去第三个电流（I3）或第三个电流（I3）的缩放版本。 被配置为抑制IR光的滤光器可以是例如介电反射光学涂层滤光器，IR吸收光学涂层滤光器或其组合。

公开(公告)号：US20070072326A1

公开(公告)日：2007-03-29

申请号：US11532762

申请日：2006-09-18

申请人： Dong Zheng ,  Phillip Benzel ,  Joy Jones ,  Alexander Kalnitsky ,  Perumal Ratman

发明人： Dong Zheng ,  Phillip Benzel ,  Joy Jones ,  Alexander Kalnitsky ,  Perumal Ratman

IPC分类号： H01L21/00 ,  H01L31/113 ,  H01L31/0203 ,  H01L31/062

CPC分类号： H01L27/1462 ,  H01L27/1463 ,  H01L31/02165

摘要： A method of a fabricating a multiple wavelength adapted photodiode and resulting photodiode includes the steps of providing a substrate having a first semiconductor type surface region on at least a portion thereof, implanting and forming a second semiconductor type shallow surface layer into the surface region, and forming a multi-layer anti-reflective coating (ARC) on the shallow surface layer. The forming step includes depositing or forming a thin oxide layer on the shallow surface layer and depositing a second dielectric layer different from the thin oxide layer on the thin oxide layer. An etch stop is formed on the second dielectric, wherein the etch stop includes at least one layer resistant to oxide etch. At least one oxide including layer (e.g. ILD) is then deposited on the etch stop. The oxide including layer and etch stop are then removed to expose at least a portion of the ARC to the ambient.

摘要翻译： 一种制造多波长适应光电二极管和所得光电二极管的方法包括以下步骤：在其至少一部分上提供具有第一半导体类型表面区域的衬底，将表面区域中的第二半导体型浅表面层注入并形成，以及 在浅表面层上形成多层抗反射涂层（ARC）。 形成步骤包括在浅表面层上沉积或形成薄氧化物层，并在薄氧化物层上沉积不同于薄氧化物层的第二电介质层。 蚀刻停止件形成在第二电介质上，其中蚀刻停止层包括至少一层抵抗氧化物蚀刻的层。 然后将至少一种包括层（例如ILD）的氧化物沉积在蚀刻停止件上。 然后去除包括氧化物层和蚀刻停止层，以将ARC的至少一部分暴露于环境中。

公开(公告)号：US20080191298A1

公开(公告)日：2008-08-14

申请号：US11686311

申请日：2007-03-14

申请人： Xijian Lin ,  Philip J. Benzel ,  Bjoy Santos ,  Joy Jones

发明人： Xijian Lin ,  Philip J. Benzel ,  Bjoy Santos ,  Joy Jones

IPC分类号： H01L31/00 ,  H01L21/98

CPC分类号： G01J1/4228 ,  G01J1/0488 ,  G01J1/4204 ,  G01J3/465 ,  G01J3/513 ,  G01J2003/516 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H04N9/045

摘要： A CMOS light detector configured to detect specific wavelengths of light includes a first sensor and a second sensor. The first sensor includes CMOS photocells that are covered by a colored filter layer of a first color that has a first transmittance that allows both light of the specific wavelengths and light of other wavelengths to pass. The second sensor including further CMOS photocells, at least some of which are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color has a second transmittance that allows light of the other wavelengths to pass. The first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light including both the specific and other wavelengths is incident upon the detector. A differential photocurrent, produced by determining a difference between the first and second photocurrents, has a spectral response with at least part of the light of other wavelengths cancelled.

摘要翻译： 被配置为检测特定波长的光的CMOS光检测器包括第一传感器和第二传感器。 第一传感器包括由具有第一透射率的第一颜色的着色滤光层覆盖的CMOS光电管，其允许特定波长的光和其它波长的光通过。 第二传感器包括进一步的CMOS光电管，其中至少一些由第一颜色的有色滤光层和第二颜色的有色滤光层两者以任何顺序叠加在一起，其中彩色滤光层 第二种颜色具有允许其它波长的光通过的第二透射率。 第一传感器产生第一光电流，并且当包括特定波长和其它波长的光入射到检测器上时，第二传感器产生第二光电流。 通过确定第一和第二光电流之间的差产生的差分光电流具有光谱响应，其中至少部分其它波长的光被消除。

公开(公告)号：US20110068426A1

公开(公告)日：2011-03-24

申请号：US12885138

申请日：2010-09-17

申请人： Dong Zheng ,  Joy Jones

发明人： Dong Zheng ,  Joy Jones

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1446 ,  G01J1/0488 ,  G01J1/4204 ,  G01J1/4228 ,  H01L27/14621 ,  H01L27/14623

摘要： A photodiode includes an opening over an active photodiode region so that a top passivation layer and interlayer dielectric layers (ILDs) do not affect the spectral response of the photodiode. A dielectric reflective optical coating filter, which includes a plurality of dielectric layers, fills at least a portion of the opening and thereby covers the active photodiode region, to shape a spectral response of the photodiode. Alternatively, the dielectric reflective optical coating filter is formed prior to the opening, and the opening is formed by removing a top passivation coating and ILDs to expose the dielectric reflective optical coating filter.

摘要翻译： 光电二极管包括有源光电二极管区域上的开口，使得顶部钝化层和层间电介质层（ILD）不影响光电二极管的光谱响应。 包括多个电介质层的介电反射光学涂层滤光器填充至少一部分开口，从而覆盖有源光电二极管区域，以形成光电二极管的光谱响应。 或者，介电反射光学涂层过滤器在开口之前形成，并且通过去除顶部钝化涂层和ILD以暴露介电反射光学涂层过滤器形成开口。