PHOTODIODE FOR MULTIPLE WAVELENGTH OPERATION
    1.
    发明申请
    PHOTODIODE FOR MULTIPLE WAVELENGTH OPERATION 有权
    多波长光圈操作

    公开(公告)号:US20070072326A1

    公开(公告)日:2007-03-29

    申请号:US11532762

    申请日:2006-09-18

    摘要: A method of a fabricating a multiple wavelength adapted photodiode and resulting photodiode includes the steps of providing a substrate having a first semiconductor type surface region on at least a portion thereof, implanting and forming a second semiconductor type shallow surface layer into the surface region, and forming a multi-layer anti-reflective coating (ARC) on the shallow surface layer. The forming step includes depositing or forming a thin oxide layer on the shallow surface layer and depositing a second dielectric layer different from the thin oxide layer on the thin oxide layer. An etch stop is formed on the second dielectric, wherein the etch stop includes at least one layer resistant to oxide etch. At least one oxide including layer (e.g. ILD) is then deposited on the etch stop. The oxide including layer and etch stop are then removed to expose at least a portion of the ARC to the ambient.

    摘要翻译: 一种制造多波长适应光电二极管和所得光电二极管的方法包括以下步骤:在其至少一部分上提供具有第一半导体类型表面区域的衬底,将表面区域中的第二半导体型浅表面层注入并形成,以及 在浅表面层上形成多层抗反射涂层(ARC)。 形成步骤包括在浅表面层上沉积或形成薄氧化物层,并在薄氧化物层上沉积不同于薄氧化物层的第二电介质层。 蚀刻停止件形成在第二电介质上,其中蚀刻停止层包括至少一层抵抗氧化物蚀刻的层。 然后将至少一种包括层(例如ILD)的氧化物沉积在蚀刻停止件上。 然后去除包括氧化物层和蚀刻停止层,以将ARC的至少一部分暴露于环境中。

    Photodiode for multiple wavelength operation
    2.
    发明授权
    Photodiode for multiple wavelength operation 有权
    用于多波长操作的光电二极管

    公开(公告)号:US07485486B2

    公开(公告)日:2009-02-03

    申请号:US11532762

    申请日:2006-09-18

    IPC分类号: H01L21/00

    摘要: A method of a fabricating a multiple wavelength adapted photodiode and resulting photodiode includes the steps of providing a substrate having a first semiconductor type surface region on at least a portion thereof, implanting and forming a second semiconductor type shallow surface layer into the surface region, and forming a multi-layer anti-reflective coating (ARC) on the shallow surface layer. The forming step includes depositing or forming a thin oxide layer on the shallow surface layer and depositing a second dielectric layer different from the thin oxide layer on the thin oxide layer. An etch stop is formed on the second dielectric, wherein the etch stop includes at least one layer resistant to oxide etch. At least one oxide including layer (e.g. ILD) is then deposited on the etch stop. The oxide including layer and etch stop are then removed to expose at least a portion of the ARC to the ambient.

    摘要翻译: 一种制造多波长适应光电二极管和所得光电二极管的方法包括以下步骤:在其至少一部分上提供具有第一半导体类型表面区域的衬底,将表面区域中的第二半导体型浅表面层注入并形成,以及 在浅表面层上形成多层抗反射涂层(ARC)。 形成步骤包括在浅表面层上沉积或形成薄氧化物层,并在薄氧化物层上沉积不同于薄氧化物层的第二电介质层。 蚀刻停止件形成在第二电介质上,其中蚀刻停止层包括至少一层抵抗氧化物蚀刻的层。 然后将至少一种包括层(例如ILD)的氧化物沉积在蚀刻停止件上。 然后去除包括氧化物层和蚀刻停止层,以将ARC的至少一部分暴露于环境中。

    LIGHT SENSORS WITH INFRARED SUPPRESSION
    3.
    发明申请
    LIGHT SENSORS WITH INFRARED SUPPRESSION 失效
    具有红外抑制的光传感器

    公开(公告)号:US20080135968A1

    公开(公告)日:2008-06-12

    申请号:US11621443

    申请日:2007-01-09

    IPC分类号: H01L31/02

    摘要: Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    Light sensors with infrared suppression
    5.
    发明授权
    Light sensors with infrared suppression 失效
    红外线抑制光传感器

    公开(公告)号:US07755117B2

    公开(公告)日:2010-07-13

    申请号:US11621443

    申请日:2007-01-09

    IPC分类号: H01L31/062

    摘要: Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    Light sensors with infrared suppression
    6.
    发明授权
    Light sensors with infrared suppression 有权
    红外线抑制光传感器

    公开(公告)号:US07960766B2

    公开(公告)日:2011-06-14

    申请号:US12817101

    申请日:2010-06-16

    IPC分类号: H01L31/062

    摘要: Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    PHOTODIODE FOR MULTIPLE WAVELENGTH OPERATION
    7.
    发明申请
    PHOTODIODE FOR MULTIPLE WAVELENGTH OPERATION 失效
    多波长光圈操作

    公开(公告)号:US20090174021A1

    公开(公告)日:2009-07-09

    申请号:US12365141

    申请日:2009-02-03

    IPC分类号: H01L31/0232

    摘要: A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.

    摘要翻译: 光电二极管包括在其至少一部分上具有第一半导体型表面区域的基板和形成在表面区域的一部分中的第二半导体型表面层。 多层抗反射涂层(ARC)在第二半导体型表面层上,其中多层ARC包括至少两个不同的电介质层。 耐氧化物蚀刻的层在多层ARC的外围部分之上。 另外的层在耐氧化物蚀刻层上方,并且因此在多层ARC的周边部分之上。 一个窗口向下延伸到多层ARC。 光电二极管区域由第一半导体型表面区域和第二半导体型表面层的pn结形成。

    Light sensors with infrared suppression
    9.
    发明授权
    Light sensors with infrared suppression 有权
    红外线抑制光传感器

    公开(公告)号:US08309994B2

    公开(公告)日:2012-11-13

    申请号:US13101667

    申请日:2011-05-05

    IPC分类号: H01L31/062

    摘要: Embodiments of the present invention are directed to light sensors that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    LIGHT SENSORS WITH INFRARED SUPPRESSION
    10.
    发明申请
    LIGHT SENSORS WITH INFRARED SUPPRESSION 有权
    具有红外抑制的光传感器

    公开(公告)号:US20110204237A1

    公开(公告)日:2011-08-25

    申请号:US13101667

    申请日:2011-05-05

    IPC分类号: G01J5/02 H01L27/146

    摘要: Embodiments of the present invention are directed to light sensors that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。