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11.发明授权MOS operational amplifier with current mirroring gain and method of operation 有权MOS运算放大器，具有电流镜像增益和操作方法公开(公告)号：US07834689B1
公开(公告)日：2010-11-16
申请号：US12507352
申请日：2009-07-22
申请人： Stefano Pietri , Chris C. Dao , Alfredo Olmos
发明人： Stefano Pietri , Chris C. Dao , Alfredo Olmos
IPC分类号： H03F3/45
CPC分类号： H03F3/45183 , H03F3/301 , H03F3/3027 , H03F3/45179 , H03F2200/513 , H03F2203/30021 , H03F2203/30081 , H03F2203/30093 , H03F2203/30114
摘要： An amplifier has an input stage coupled to a current mirror for providing a first control signal. A gain boosting stage has first and second sections, each having first and second inputs and an output. The first input of the first section is coupled to the input stage. The second input of the first section is a first node between a source and a drain of a first pair of series-coupled transistors. The first input of the second section is coupled to the current mirror. The second input of the second section is a second node between a source and a drain of a second pair of series-coupled transistors. A pre-driver stage has inputs coupled to the input stage and the gain boosting stage. The pre-driver stage provides inputs to the gain boosting stage and receives outputs from the gain boosting stage prior to coupling to an output stage.
摘要翻译： 放大器具有耦合到电流镜的输入级，用于提供第一控制信号。 增益级具有第一和第二部分，每个部分具有第一和第二输入和输出。 第一部分的第一输入耦合到输入级。 第一部分的第二输入是第一对串联耦合晶体管的源极和漏极之间的第一节点。 第二部分的第一输入端连接到电流镜。 第二部分的第二输入是第二对串联耦合晶体管的源极和漏极之间的第二节点。 预驱动级具有耦合到输入级和增益级的输入。 预驱动器级提供增益提升级的输入，并且在耦合到输出级之前从增益提升级接收输出。
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公开(公告)号：US20100127687A1
公开(公告)日：2010-05-27
申请号：US12277695
申请日：2008-11-25
IPC分类号： G05F3/08
CPC分类号： G05F3/16
摘要： A programmable voltage reference includes a temperature compensated current source and a voltage reference circuit. The temperature compensated current source includes an output configured to provide a reference current. The voltage reference circuit includes an input coupled to the output of the temperature compensated current source and a reference output. The voltage reference circuit includes a self-cascode metal-oxide semiconductor field-effect transistor structure that includes a first device that is diode-connected and operates in a weak inversion saturation region and a second device that operates in a weak inversion triode region. A length of the second device is selectable. The voltage reference circuit is configured to provide a reference voltage on the reference output based on the reference current.
摘要翻译： 可编程电压基准包括温度补偿电流源和电压参考电路。 温度补偿电流源包括被配置为提供参考电流的输出。 电压参考电路包括耦合到温度补偿电流源的输出和参考输出的输入。 电压参考电路包括自共成共栅型金属氧化物半导体场效应晶体管结构，其包括二极管连接并在弱反相饱和区工作的第一器件和在弱反相三极管区工作的第二器件。 第二装置的长度是可选择的。 电压参考电路被配置为基于参考电流在参考输出上提供参考电压。
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公开(公告)号：US20090278571A1
公开(公告)日：2009-11-12
申请号：US12115825
申请日：2008-05-06
申请人： Stefano Pietri , Alfredo Olmos , Jehoda Refaeli
发明人： Stefano Pietri , Alfredo Olmos , Jehoda Refaeli
CPC分类号： H03K5/2472 , G05F3/205 , G05F3/24 , H03K2217/0018
摘要： A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.
摘要翻译： 一种方法包括接收包括至少第一电压，第二电压和第三电压的一组电压，并且基于该组电压的极限电压来偏置晶体管的阱。 偏置晶体管的阱可以包括基于第一电压和第二电压的比较同时提供第一信号和第二信号，并且选择性地将晶体管的阱耦合到该组电压的极值电压的源 第一信号，第二信号和第三电压。 电子设备包括晶体管和电源切换模块。 功率切换模块包括一组输入，每个输入被配置为接收包括至少第一电压，第二电压和第三电压的一组电压中的对应的一个，并且包括耦合到晶体管的阱的输出 ，所述输出被配置为提供所述一组电压的极限电压。
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公开(公告)号：US07579898B2
公开(公告)日：2009-08-25
申请号：US11496359
申请日：2006-07-31
CPC分类号： H01L23/34 , G01K7/015 , H01L2924/0002 , H01L2924/00
摘要： A device having a temperature sensor device is disclosed. The temperature sensor device includes a complementary to absolute temperature (CTAT) module and a reference module. Both the temperature sensor and the reference voltage module provide signals, that vary in a complementary relationship with the variation in temperature. While the signals can be voltages or currents, for purposes of discussion the signals are discussed in terms of voltages herein. The reference module provides a signal that has a relatively small variation with temperature as compared to the variation in a signal provided by the CTAT module. The signals are provided to a comparator, which provides a temperature control signal based on a comparison of the input signals.
摘要翻译： 公开了一种具有温度传感器装置的装置。 温度传感器装置包括与绝对温度（CTAT）模块和参考模块的互补。 温度传感器和参考电压模块均提供与温度变化互补关系的信号。 虽然信号可以是电压或电流，但是为了讨论的目的，这些信号在本文的电压方面进行了讨论。 与CTAT模块提供的信号的变化相比，参考模块提供的信号与温度的变化相对较小。 信号被提供给比较器，该比较器基于输入信号的比较来提供温度控制信号。
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公开(公告)号：US08432214B2
公开(公告)日：2013-04-30
申请号：US13052891
申请日：2011-03-21
IPC分类号： H01L35/00
CPC分类号： G01K7/01
摘要： A programmable temperature sensing circuit includes a comparator, first and second CTAT sensing elements, first and second PTAT reference circuits, and a selection circuit. When a selection signal is a first logic state, an output terminal of the first PTAT reference circuit is coupled to the second CTAT temperature sensing element for providing a first threshold voltage to the second input of the comparator. When the selection signal is a second logic state different from the first logic state, a series-connection of the first PTAT reference circuit and the second PTAT reference circuit are coupled to the second CTAT temperature sensing element for providing a second threshold voltage to the second input of the comparator. The comparator provides an output voltage indication when a voltage provided by the first CTAT sensing element compares favorably with the selected one of the first or second threshold voltages.
摘要翻译： 可编程温度感测电路包括比较器，第一和第二CTAT感测元件，第一和第二PTAT参考电路以及选择电路。 当选择信号是第一逻辑状态时，第一PTAT参考电路的输出端耦合到第二CTAT温度感测元件，用于向比较器的第二输入提供第一阈值电压。 当选择信号是与第一逻辑状态不同的第二逻辑状态时，第一PTAT参考电路和第二PTAT参考电路的串联连接耦合到第二CTAT温度感测元件，以向第二逻辑状态提供第二阈值电压 输入比较器。 当由第一CTAT感测元件提供的电压与所选择的第一或第二阈值电压中的一个相比较时，比较器提供输出电压指示。
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公开(公告)号：US20090315835A1
公开(公告)日：2009-12-24
申请号：US12145004
申请日：2008-06-24
IPC分类号： G06F3/041
CPC分类号： G06F3/0416
摘要： A method includes driving a current through a touch screen that is based on contact of the touch screen, generating a proportional second current, and detecting contact of the touch screen from the second current. Another method includes providing a touch screen with parallel plates, disabling contact detection when a plate voltage is lower than a threshold voltage, and enabling contact detection when the plate voltage is at least equal to the threshold voltage. A device includes a first node and a second node coupled to a touch screen, a third node, a first current mirror coupled to the second node and the third node configured to generate a current at the third node that is proportional to a second current at the second node, and a detection circuit that provides a signal based on the first current that indicates contact of the touch screen.
摘要翻译： 一种方法包括通过基于触摸屏的接触的触摸屏驱动电流，产生比例的第二电流，以及检测触摸屏与第二电流的接触。 另一种方法包括提供具有平行板的触摸屏，当板电压低于阈值电压时禁止接触检测，以及当板电压至少等于阈值电压时使能接触检测。 设备包括耦合到触摸屏的第一节点和第二节点，第三节点，耦合到第二节点的第一电流镜和被配置为在第三节点处产生与第二电流成比例的电流的第三节点 第二节点，以及检测电路，其提供基于指示触摸屏的接触的第一电流的信号。
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公开(公告)号：US07486129B2
公开(公告)日：2009-02-03
申请号：US11681067
申请日：2007-03-01
摘要： A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.
摘要翻译： 电压参考包括被配置为接收第一与绝对温度（PTAT）成比例的电流的第一单元和被配置为接收第二PTAT电流的第二单元。 第一个单元包括二极管连接的绝缘栅场效应晶体管（IGFET）堆叠。 IGFET的二极管连接的堆叠包括被配置为偏置在三极管弱反转区域中的第一晶体管。 第二单元包括二极管连接的IGFET堆叠和串联电阻器。 第二PTAT电流的大小基于第一晶体管的漏极 - 源极电压和串联电阻器的值。 电压参考基于第二PTAT电流在第二单元的参考节点处提供参考电压。
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18.发明授权Process of forming an electronic device including a resistor-capacitor filter 有权形成包括电阻 - 电容滤波器的电子器件的工艺公开(公告)号：US08629530B2
公开(公告)日：2014-01-14
申请号：US13223573
申请日：2011-09-01
IPC分类号： H01L27/06
CPC分类号： H01L27/0629 , H01L23/64 , H01L28/20 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A process of forming an electronic device can include forming a capacitor dielectric layer over a base region, wherein the base region includes a base semiconductor material, forming a gate dielectric layer over a substrate, forming a capacitor electrode over the capacitor dielectric layer, forming a gate electrode over the gate dielectric layer, and forming an input terminal and an output terminal to the capacitor electrode. The input terminal and the output terminal can be spaced apart from each other and are connected to different components within the electronic device. A filter can include the base region, the capacitor dielectric layer, and the capacitor electrode. A transistor structure can include the gate dielectric layer and the gate electrode. An electronic device can include a low-pass filter and a transistor structure, such as an n-channel transistor or a p-channel transistor.
摘要翻译： 形成电子器件的工艺可以包括在基极区域上形成电容器电介质层，其中基极区域包括基底半导体材料，在衬底上形成栅极电介质层，在电容器电介质层上形成电容器电极， 栅极电极，并且形成输入端子和输出端子到电容器电极。 输入端子和输出端子可以彼此间隔开并且连接到电子设备内的不同部件。 滤波器可以包括基极区域，电容器介电层和电容器电极。 晶体管结构可以包括栅极电介质层和栅电极。 电子器件可以包括低通滤波器和诸如n沟道晶体管或p沟道晶体管的晶体管结构。
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公开(公告)号：US08330526B2
公开(公告)日：2012-12-11
申请号：US12836997
申请日：2010-07-15
CPC分类号： G06F1/28 , G01R19/16552
摘要： A low voltage detector (100) includes a voltage and current reference circuit (102); a power supply voltage monitor circuit (104), coupled to the voltage and current reference circuit and to a power supply; and a voltage comparator (106), coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit. The voltage and current reference circuit includes a self-cascode MOSFET structure (SCM) (110) that produces a reference voltage. The power supply voltage monitoring circuit includes another SCM (140) that produces a monitor voltage, related to the power supply voltage. The reference voltage and the monitor voltage have a same behavior with changes in temperature, thereby allowing the trip point of the low voltage detector to minimally vary with temperature. The low voltage detector is disposed on an integrated circuit (101), and the transistors of the low voltage detector consist of only CMOS transistors.
摘要翻译： 低电压检测器（100）包括电压和电流参考电路（102）; 电源电压监视电路（104），耦合到电压和电流参考电路和电源; 以及耦合到电压和电流参考电路和电源电压监视电路的电压比较器（106）。 电压和电流参考电路包括产生参考电压的自共源共栅MOSFET结构（SCM）（110）。 电源电压监视电路包括产生与电源电压相关的监视电压的另一SCM（140）。 参考电压和监视电压与温度变化具有相同的行为，从而允许低电压检测器的跳变点最小化随温度变化。 低电压检测器设置在集成电路（101）上，低电压检测器的晶体管仅由CMOS晶体管构成。
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公开(公告)号：US20120013365A1
公开(公告)日：2012-01-19
申请号：US12836997
申请日：2010-07-15
IPC分类号： H03K5/153
CPC分类号： G06F1/28 , G01R19/16552
摘要： A low voltage detector (100) includes a voltage and current reference circuit (102); a power supply voltage monitor circuit (104), coupled to the voltage and current reference circuit and to a power supply; and a voltage comparator (106), coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit. The voltage and current reference circuit includes a self-cascode MOSFET structure (SCM) (110) that produces a reference voltage. The power supply voltage monitoring circuit includes another SCM (140) that produces a monitor voltage, related to the power supply voltage. The reference voltage and the monitor voltage have a same behavior with changes in temperature, thereby allowing the trip point of the low voltage detector to minimally vary with temperature. The low voltage detector is disposed on an integrated circuit (101), and the transistors of the low voltage detector consist of only CMOS transistors.
摘要翻译： 低电压检测器（100）包括电压和电流参考电路（102）; 电源电压监视电路（104），耦合到电压和电流参考电路和电源; 以及耦合到电压和电流参考电路和电源电压监视电路的电压比较器（106）。 电压和电流参考电路包括产生参考电压的自共源共栅MOSFET结构（SCM）（110）。 电源电压监视电路包括产生与电源电压相关的监视电压的另一SCM（140）。 参考电压和监视电压与温度变化具有相同的行为，从而允许低电压检测器的跳变点最小化随温度变化。 低电压检测器设置在集成电路（101）上，低电压检测器的晶体管仅由CMOS晶体管构成。
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