Temperature sensor device and methods thereof
    1.
    发明申请
    Temperature sensor device and methods thereof 有权
    温度传感器装置及其方法

    公开(公告)号:US20080061863A1

    公开(公告)日:2008-03-13

    申请号:US11496359

    申请日:2006-07-31

    IPC分类号: H01L35/00

    摘要: A device having a temperature sensor device is disclosed. The temperature sensor device includes a complementary to absolute temperature (CTAT) module and a reference module. Both the temperature sensor and the reference voltage module provide signals, that vary in a complementary relationship with the variation in temperature. While the signals can be voltages or currents, for purposes of discussion the signals are discussed in terms of voltages herein. The reference module provides a signal that has a relatively small variation with temperature as compared to the variation in a signal provided by the CTAT module. The signals are provided to a comparator, which provides a temperature control signal based on a comparison of the input signals.

    摘要翻译: 公开了一种具有温度传感器装置的装置。 温度传感器装置包括与绝对温度(CTAT)模块和参考模块的互补。 温度传感器和参考电压模块均提供与温度变化互补关系的信号。 虽然信号可以是电压或电流,但是为了讨论的目的,这些信号在本文的电压方面进行了讨论。 与CTAT模块提供的信号的变化相比,参考模块提供的信号与温度的变化相对较小。 信号被提供给比较器,该比较器基于输入信号的比较来提供温度控制信号。

    Device and technique for transistor well biasing
    2.
    发明授权
    Device and technique for transistor well biasing 有权
    晶体管阱偏置的器件和技术

    公开(公告)号:US08164378B2

    公开(公告)日:2012-04-24

    申请号:US12115825

    申请日:2008-05-06

    IPC分类号: H03K3/01 H03K17/00

    摘要: A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.

    摘要翻译: 一种方法包括接收包括至少第一电压,第二电压和第三电压的一组电压,并且基于该组电压的极限电压来偏置晶体管的阱。 偏置晶体管的阱可以包括基于第一电压和第二电压的比较同时提供第一信号和第二信号,并且选择性地将晶体管的阱耦合到该组电压的极值电压的源 第一信号,第二信号和第三电压。 电子设备包括晶体管和电源切换模块。 功率切换模块包括一组输入,每个输入被配置为接收包括至少第一电压,第二电压和第三电压的一组电压中的对应的一个,并且包括耦合到晶体管的阱的输出 ,所述输出被配置为提供所述一组电压的极限电压。

    Temperature sensor device and methods thereof
    3.
    发明授权
    Temperature sensor device and methods thereof 有权
    温度传感器装置及其方法

    公开(公告)号:US07579898B2

    公开(公告)日:2009-08-25

    申请号:US11496359

    申请日:2006-07-31

    摘要: A device having a temperature sensor device is disclosed. The temperature sensor device includes a complementary to absolute temperature (CTAT) module and a reference module. Both the temperature sensor and the reference voltage module provide signals, that vary in a complementary relationship with the variation in temperature. While the signals can be voltages or currents, for purposes of discussion the signals are discussed in terms of voltages herein. The reference module provides a signal that has a relatively small variation with temperature as compared to the variation in a signal provided by the CTAT module. The signals are provided to a comparator, which provides a temperature control signal based on a comparison of the input signals.

    摘要翻译: 公开了一种具有温度传感器装置的装置。 温度传感器装置包括与绝对温度(CTAT)模块和参考模块的互补。 温度传感器和参考电压模块均提供与温度变化互补关系的信号。 虽然信号可以是电压或电流,但是为了讨论的目的,这些信号在本文的电压方面进行了讨论。 与CTAT模块提供的信号的变化相比,参考模块提供的信号与温度的变化相对较小。 信号被提供给比较器,该比较器基于输入信号的比较来提供温度控制信号。

    Current-mode memory cell
    4.
    发明授权
    Current-mode memory cell 有权
    电流模式存储单元

    公开(公告)号:US07495987B2

    公开(公告)日:2009-02-24

    申请号:US11811547

    申请日:2007-06-11

    IPC分类号: G11C17/18

    CPC分类号: G11C17/18 G11C17/16

    摘要: Methods and corresponding systems for reading a memory cell include a first current sourced from a first current source into a summing node, wherein the first current source is coupled to a first reference. A second current is sourced from a second current source into the summing node, wherein the second current source is coupled to the first reference through a programmable fuse. A third current is sunk from the summing node with a current sink, wherein the current sink is coupled to a second reference, and wherein a third current limit is greater than a first current limit and less than the sum of the first current limit and the second current limit. A voltage at the summing node is output in response to the first current, the second current, and the third current. The first and second current sources, and the current sink can be current mirrors.

    摘要翻译: 用于读取存储器单元的方法和相应的系统包括从第一电流源进入求和节点的第一电流,其中第一电流源耦合到第一参考。 第二电流源自第二电流源到求和节点,其中第二电流源通过可编程保险丝耦合到第一参考。 第三电流从具有电流吸收器的求和节点沉没,其中电流吸收器耦合到第二参考,并且其中第三电流限制大于第一电流限制并且小于第一电流限制和 第二电流限制。 响应于第一电流,第二电流和第三电流输出求和节点处的电压。 第一和第二电流源,以及电流源可以是电流镜。

    Current-mode memory cell
    5.
    发明申请
    Current-mode memory cell 有权
    电流模式存储单元

    公开(公告)号:US20080304348A1

    公开(公告)日:2008-12-11

    申请号:US11811547

    申请日:2007-06-11

    IPC分类号: G11C17/16

    CPC分类号: G11C17/18 G11C17/16

    摘要: Methods and corresponding systems for reading a memory cell include a first current sourced from a first current source into a summing node, wherein the first current source is coupled to a first reference. A second current is sourced from a second current source into the summing node, wherein the second current source is coupled to the first reference through a programmable fuse. A third current is sunk from the summing node with a current sink, wherein the current sink is coupled to a second reference, and wherein a third current limit is greater than a first current limit and less than the sum of the first current limit and the second current limit. A voltage at the summing node is output in response to the first current, the second current, and the third current. The first and second current sources, and the current sink can be current mirrors.

    摘要翻译: 用于读取存储器单元的方法和相应的系统包括从第一电流源进入求和节点的第一电流,其中第一电流源耦合到第一参考。 第二电流源自第二电流源到求和节点,其中第二电流源通过可编程保险丝耦合到第一参考。 第三电流从具有电流吸收器的求和节点沉没,其中电流吸收器耦合到第二参考,并且其中第三电流限制大于第一电流限制并且小于第一电流限制和 第二电流限制。 响应于第一电流,第二电流和第三电流输出求和节点处的电压。 第一和第二电流源,以及电流源可以是电流镜。

    Oscillator devices and methods thereof
    6.
    发明授权
    Oscillator devices and methods thereof 有权
    振荡器装置及其方法

    公开(公告)号:US07733191B2

    公开(公告)日:2010-06-08

    申请号:US11680218

    申请日:2007-02-28

    IPC分类号: H03K3/26

    CPC分类号: H03K3/354 H03K3/011

    摘要: Oscillator devices and methods of operating such oscillator devices are disclosed. The oscillator devices include a current source, and an oscillation module to provide a clock signal. The frequency of the clock signal depends on the relationship between a threshold voltage of a transistor at the oscillation module and the current level provided by the current source. The transistor at the oscillation module is matched to a transistor at the current source so that the frequency of the clock signal is relatively insensitive to changes in device temperature.

    摘要翻译: 公开了振荡器装置和操作这种振荡器装置的方法。 振荡器装置包括电流源和提供时钟信号的振荡模块。 时钟信号的频率取决于振荡模块处的晶体管的阈值电压与由电流源提供的电流之间的关系。 振荡模块上的晶体管与电流源上的晶体管相匹配,使得时钟信号的频率对器件温度的变化相对不敏感。

    OSCILLATOR DEVICES AND METHODS THEREOF
    7.
    发明申请
    OSCILLATOR DEVICES AND METHODS THEREOF 有权
    振荡器器件及其方法

    公开(公告)号:US20080204155A1

    公开(公告)日:2008-08-28

    申请号:US11680218

    申请日:2007-02-28

    IPC分类号: H03B5/12

    CPC分类号: H03K3/354 H03K3/011

    摘要: Oscillator devices and methods of operating such oscillator devices are disclosed. The oscillator devices include a current source, and an oscillation module to provide a clock signal. The frequency of the clock signal depends on the relationship between a threshold voltage of a transistor at the oscillation module and the current level provided by the current source. The transistor at the oscillation module is matched to a transistor at the current source so that the frequency of the clock signal is relatively insensitive to changes in device temperature.

    摘要翻译: 公开了振荡器装置和操作这种振荡器装置的方法。 振荡器装置包括电流源和提供时钟信号的振荡模块。 时钟信号的频率取决于振荡模块处的晶体管的阈值电压与由电流源提供的电流之间的关系。 振荡模块上的晶体管与电流源上的晶体管相匹配,使得时钟信号的频率对器件温度的变化相对不敏感。

    Method and apparatus for limiting access to an integrated circuit (IC)
    8.
    发明授权
    Method and apparatus for limiting access to an integrated circuit (IC) 有权
    用于限制对集成电路(IC)的访问的方法和装置

    公开(公告)号:US09046570B2

    公开(公告)日:2015-06-02

    申请号:US13566363

    申请日:2012-08-03

    IPC分类号: G01R23/14 G01R31/317

    摘要: A method and apparatus for limiting access to an integrated circuit (IC) upon detection of abnormal conditions is provided. At least one of abnormal voltage detection, abnormal temperature detection, and abnormal clock detection are provided with low power consumption. Both abnormally low and abnormally high parameter values (e.g. abnormally low or high voltage, temperature, or clock frequency) may be detected. Abnormal clock detection may also detect a stopped clock signal, including a clock signal stopped at a low logic level or at a high logic level. Furthermore, abnormal clock detection may detect an abnormal duty cycle of a clock signal. A sampled bandgap reference may be used to provide accurate voltage and current references while consuming a minimal amount of power. Upon detection of an abnormal parameter value, one or more tamper indications may be provided to initiate tampering countermeasures, such as limiting access to the IC.

    摘要翻译: 提供了一种在检测到异常状况时限制对集成电路(IC)的访问的方法和装置。 以低功耗提供异常电压检测,异常温度检测和异常时钟检测中的至少一种。 可以检测异常低和异常高的参数值(例如异常低或高电压,温度或时钟频率)。 异常时钟检测还可以检测停止的时钟信号,包括以低逻辑电平或高逻辑电平停止的时钟信号。 此外,异常时钟检测可以检测时钟信号的异常占空比。 采样的带隙基准可用于提供精确的电压和电流参考,同时消耗最小的功率。 当检测到异常参数值时,可以提供一个或多个篡改指示以启动篡改对策,例如限制对IC的访问。

    Programmable voltage reference with a voltage reference circuit having a self-cascode metal-oxide semiconductor field-effect transistor structure
    9.
    发明授权
    Programmable voltage reference with a voltage reference circuit having a self-cascode metal-oxide semiconductor field-effect transistor structure 有权
    具有电压参考电路的可编程参考电压,具有自共存状态金属氧化物半导体场效应晶体管结构

    公开(公告)号:US08093880B2

    公开(公告)日:2012-01-10

    申请号:US12277695

    申请日:2008-11-25

    IPC分类号: G05F3/08

    CPC分类号: G05F3/16

    摘要: A programmable voltage reference includes a temperature compensated current source and a voltage reference circuit. The temperature compensated current source includes an output configured to provide a reference current. The voltage reference circuit includes an input coupled to the output of the temperature compensated current source and a reference output. The voltage reference circuit includes a self-cascode metal-oxide semiconductor field-effect transistor structure that includes a first device that is diode-connected and operates in a weak inversion saturation region and a second device that operates in a weak inversion triode region. A length of the second device is selectable. The voltage reference circuit is configured to provide a reference voltage on the reference output based on the reference current.

    摘要翻译: 可编程电压基准包括温度补偿电流源和电压参考电路。 温度补偿电流源包括被配置为提供参考电流的输出。 电压参考电路包括耦合到温度补偿电流源的输出和参考输出的输入。 电压参考电路包括自共成共栅型金属氧化物半导体场效应晶体管结构,其包括二极管连接并在弱反相饱和区工作的第一器件和在弱反相三极管区工作的第二器件。 第二装置的长度是可选择的。 电压参考电路被配置为基于参考电流在参考输出上提供参考电压。

    PROGRAMMABLE TEMPERATURE SENSING CIRCUIT FOR AN INTEGRATED CIRCUIT
    10.
    发明申请
    PROGRAMMABLE TEMPERATURE SENSING CIRCUIT FOR AN INTEGRATED CIRCUIT 有权
    用于集成电路的可编程温度感测电路

    公开(公告)号:US20120242398A1

    公开(公告)日:2012-09-27

    申请号:US13052891

    申请日:2011-03-21

    IPC分类号: H03K3/011

    CPC分类号: G01K7/01

    摘要: A programmable temperature sensing circuit includes a comparator, first and second CTAT sensing elements, first and second PTAT reference circuits, and a selection circuit. When a selection signal is a first logic state, an output terminal of the first PTAT reference circuit is coupled to the second CTAT temperature sensing element for providing a first threshold voltage to the second input of the comparator. When the selection signal is a second logic state different from the first logic state, a series-connection of the first PTAT reference circuit and the second PTAT reference circuit are coupled to the second CTAT temperature sensing element for providing a second threshold voltage to the second input of the comparator. The comparator provides an output voltage indication when a voltage provided by the first CTAT sensing element compares favorably with the selected one of the first or second threshold voltages.

    摘要翻译: 可编程温度感测电路包括比较器,第一和第二CTAT感测元件,第一和第二PTAT参考电路以及选择电路。 当选择信号是第一逻辑状态时,第一PTAT参考电路的输出端耦合到第二CTAT温度感测元件,用于向比较器的第二输入提供第一阈值电压。 当选择信号是与第一逻辑状态不同的第二逻辑状态时,第一PTAT参考电路和第二PTAT参考电路的串联连接耦合到第二CTAT温度感测元件,以向第二逻辑状态提供第二阈值电压 输入比较器。 当由第一CTAT感测元件提供的电压与所选择的第一或第二阈值电压中的一个相比较时,比较器提供输出电压指示。