摘要:
A method includes driving a current through a touch screen that is based on contact of the touch screen, generating a proportional second current, and detecting contact of the touch screen from the second current. Another method includes providing a touch screen with parallel plates, disabling contact detection when a plate voltage is lower than a threshold voltage, and enabling contact detection when the plate voltage is at least equal to the threshold voltage. A device includes a first node and a second node coupled to a touch screen, a third node, a first current mirror coupled to the second node and the third node configured to generate a current at the third node that is proportional to a second current at the second node, and a detection circuit that provides a signal based on the first current that indicates contact of the touch screen.
摘要:
A method includes driving a current through a touch screen that is based on contact of the touch screen, generating a proportional second current, and detecting contact of the touch screen from the second current. Another method includes providing a touch screen with parallel plates, disabling contact detection when a plate voltage is lower than a threshold voltage, and enabling contact detection when the plate voltage is at least equal to the threshold voltage. A device includes a first node and a second node coupled to a touch screen, a third node, a first current mirror coupled to the second node and the third node configured to generate a current at the third node that is proportional to a second current at the second node, and a detection circuit that provides a signal based on the first current that indicates contact of the touch screen.
摘要:
A method and apparatus for limiting access to an integrated circuit (IC) upon detection of abnormal conditions is provided. At least one of abnormal voltage detection, abnormal temperature detection, and abnormal clock detection are provided with low power consumption. Both abnormally low and abnormally high parameter values (e.g. abnormally low or high voltage, temperature, or clock frequency) may be detected. Abnormal clock detection may also detect a stopped clock signal, including a clock signal stopped at a low logic level or at a high logic level. Furthermore, abnormal clock detection may detect an abnormal duty cycle of a clock signal. A sampled bandgap reference may be used to provide accurate voltage and current references while consuming a minimal amount of power. Upon detection of an abnormal parameter value, one or more tamper indications may be provided to initiate tampering countermeasures, such as limiting access to the IC.
摘要:
A programmable voltage reference includes a temperature compensated current source and a voltage reference circuit. The temperature compensated current source includes an output configured to provide a reference current. The voltage reference circuit includes an input coupled to the output of the temperature compensated current source and a reference output. The voltage reference circuit includes a self-cascode metal-oxide semiconductor field-effect transistor structure that includes a first device that is diode-connected and operates in a weak inversion saturation region and a second device that operates in a weak inversion triode region. A length of the second device is selectable. The voltage reference circuit is configured to provide a reference voltage on the reference output based on the reference current.
摘要:
A device having a temperature sensor device is disclosed. The temperature sensor device includes a complementary to absolute temperature (CTAT) module and a reference module. Both the temperature sensor and the reference voltage module provide signals, that vary in a complementary relationship with the variation in temperature. While the signals can be voltages or currents, for purposes of discussion the signals are discussed in terms of voltages herein. The reference module provides a signal that has a relatively small variation with temperature as compared to the variation in a signal provided by the CTAT module. The signals are provided to a comparator, which provides a temperature control signal based on a comparison of the input signals.
摘要:
A programmable temperature sensing circuit includes a comparator, first and second CTAT sensing elements, first and second PTAT reference circuits, and a selection circuit. When a selection signal is a first logic state, an output terminal of the first PTAT reference circuit is coupled to the second CTAT temperature sensing element for providing a first threshold voltage to the second input of the comparator. When the selection signal is a second logic state different from the first logic state, a series-connection of the first PTAT reference circuit and the second PTAT reference circuit are coupled to the second CTAT temperature sensing element for providing a second threshold voltage to the second input of the comparator. The comparator provides an output voltage indication when a voltage provided by the first CTAT sensing element compares favorably with the selected one of the first or second threshold voltages.
摘要:
A touch panel detection circuit includes current limiting circuitry that has a first portion coupled between a first supply voltage terminal and a first input node and a second portion coupled between a second input node and a second supply voltage terminal. Programmable precharge circuitry connects the first input node to the first supply voltage terminal via a conductive path that is in parallel with the first portion of the current limiting circuitry and precharges the first input node to a predetermined voltage. Comparison circuitry is coupled to the programmable precharge circuitry and to the first input node. The comparison circuitry detects a change in resistance between the first input node and the second input node and provides a signal in response thereto when the comparison circuitry is enabled by the programmable precharge circuitry.
摘要:
A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.
摘要:
A touch panel detection circuit includes current limiting circuitry that has a first portion coupled between a first supply voltage terminal and a first input node and a second portion coupled between a second input node and a second supply voltage terminal. Programmable precharge circuitry connects the first input node to the first supply voltage terminal via a conductive path that is in parallel with the first portion of the current limiting circuitry and precharges the first input node to a predetermined voltage. Comparison circuitry is coupled to the programmable precharge circuitry and to the first input node. The comparison circuitry detects a change in resistance between the first input node and the second input node and provides a signal in response thereto when the comparison circuitry is enabled by the programmable precharge circuitry.
摘要:
A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.