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    Finishing process for the manufacture of a semiconductor structure
    12.
    发明授权
    Finishing process for the manufacture of a semiconductor structure 有权
    制造半导体结构的精加工工艺

    公开(公告)号：US07514341B2

    公开(公告)日：2009-04-07

    申请号：US11356926

    申请日：2006-02-16

    申请人： Eric Neyret ,  Alice Boussagol ,  Nadia Ben Mohamed

    发明人： Eric Neyret ,  Alice Boussagol ,  Nadia Ben Mohamed

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： The invention relates to a process for the formation of a structure comprising a thin layer made of semiconductor material on a substrate, including the steps of providing a zone of weakness in a donor substrate; bonding the donor substrate to a support substrate; detaching a portion of the donor substrate to transfer it to the support substrate, wherein the detaching includes applying heat treating the donor substrate to weaken the zone of weakness without initiating detachment and applying an energy pulse to provoke self-maintained detachment of the donor substrate portion to transfer it to the support substrate; and subjecting the transferred portion of the donor substrate to a finishing operation to form a thin layer. The finishing operation is simplified compared to that which is conducted by a conventional process that achieves detaching by applying a heat treatment to provoke self-maintained detachment of the donor substrate portion, and the thin layer has a surface of the same smoothness as one prepared by the conventional process.

    摘要翻译： 本发明涉及一种用于形成包括由衬底上的半导体材料制成的薄层的结构的方法，包括以下步骤：在施主衬底中提供弱化区; 将施主衬底粘合到支撑衬底上; 分离供体基质的一部分以将其转移到支撑基底，其中分离包括施加热处理供体基底以弱化弱化区而不引发脱离并施加能量脉冲以引发供体基底部分的自维持脱离 将其转移到支撑基板上; 并且对被转移的供体基底进行精加工操作以形成薄层。 与通过施加热处理以实现供体基板部分的自我维持的分离而实现分离的常规方法进行的精加工操作相比，该薄层具有与由 常规方法。

    Composite structure with high heat dissipation
    13.
    发明授权
    Composite structure with high heat dissipation 有权
    复合结构散热性好

    公开(公告)号：US07256473B2

    公开(公告)日：2007-08-14

    申请号：US11539310

    申请日：2006-10-06

    申请人： Bruce Faure ,  Alice Boussagol

    发明人： Bruce Faure ,  Alice Boussagol

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76254

    摘要： A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.

    摘要翻译： 公开了一种复合结构，其包括支撑晶片和支撑晶片上的分层结构。 层状结构包括至少一层单晶材料和至少一层电介质材料。 此外，选择层状结构材料和每层的厚度使得复合结构的环境温度和600°K之间的热阻抗是不大于单晶体块状SiC的热阻抗的约1.3倍的值 晶片具有与复合结构相同的尺寸。 复合结构为制造光学，电子或光电子元件提供了足够的散热特性。

    Method for making a composite substrate and composite substrate according to the method
    14.
    发明申请
    Method for making a composite substrate and composite substrate according to the method 有权
    根据该方法制造复合衬底和复合衬底的方法

    公开(公告)号：US20070022940A1

    公开(公告)日：2007-02-01

    申请号：US11541192

    申请日：2006-09-28

    申请人： Alice Boussagol ,  Frederic Dupont ,  Bruce Faure

    发明人： Alice Boussagol ,  Frederic Dupont ,  Bruce Faure

    IPC分类号： C30B33/06

    CPC分类号： H01L21/76254 ,  Y10S117/915

    摘要： The present invention provides methods for fabricating a composite substrate including a supporting substrate and a layer of a binary or ternary material having a crystal form that is non-cubic and semi-polar or non-polar. The methods comprise transferring the layer of a binary or ternary material from a donor substrate to a receiving substrate.

    摘要翻译： 本发明提供了制造复合衬底的方法，所述复合衬底包括支撑衬底和具有非立方和半极性或非极性的晶体形式的二元或三元材料层。 所述方法包括将二元或三元材料的层从施主衬底转移到接收衬底。

    Thin layer transfer method utilizing co-implantation to reduce blister formation and to surface roughness
    15.
    发明申请
    Thin layer transfer method utilizing co-implantation to reduce blister formation and to surface roughness 有权
    薄层转移方法利用共同植入来减少气泡形成和表面粗糙度

    公开(公告)号：US20060060943A1

    公开(公告)日：2006-03-23

    申请号：US11181405

    申请日：2005-07-13

    申请人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

    发明人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

    IPC分类号： H01L29/32 ,  H01L21/425

    CPC分类号： H01L21/76254 ,  H01L21/26506

    摘要： The invention relates to a method for producing a semiconductor structure which comprises conducting controlled co-implanting of at least first and second different atomic species into a face of donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. This step is conducted by selecting implantation energies so that the coimplanting is made under conditions such that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed and at a maximum concentration peak. Also, the implantation doses and implantation energies of the first and second species are selected such that the second species is implanted deeper in the embrittlement zone than the first species spreading zone, with the first species selected to provide essentially chemical implantation to thus form platelet defects in the donor substrate, and with the second species selected to provide physical implantation to thus act as a source of internal pressure in the donor wafer to impart stress upon the platelet defects. Next, the face of the donor substrate is placed into contact with a support substrate, and then the donor substrate is detached at the embrittlement zone to transfer the thin layer to the support substrate while minimizing blister formation in and surface roughness of the transferred layer. Preferably, the implantation dose of the first species is between about 40 to 60 percent and generally about 50% of all implantation doses. This method is preferably utilized for forming or producing SeOI (Semiconductor On Insulator) structures.

    摘要翻译： 本发明涉及一种用于制造半导体结构的方法，该方法包括将至少第一和第二不同原子物质的受控共同植入至施主衬底的表面，以产生限定待转移的施主材料薄层的脆化区。 该步骤是通过选择植入能量进行的，以便在使得第一和第二物质分别分布在施主晶片中的根据重新分配分布的条件下进行共同植入，其呈现每个物种主要分布在其中的扩散区 最大浓度峰值。 此外，选择第一种和第二种的植入剂量和植入能量使得第二种类在脆化区比第一物种扩散区更深地植入，其中第一种被选择以提供基本上化学植入从而形成血小板缺陷 在供体底物中，并且选择第二种以提供物理植入，从而充当供体晶片中的内部压力源，以对血小板缺陷施加压力。 接下来，将供体基板的表面放置成与支撑基板接触，然后在脆化区域分离施主基板，以将薄层转移到支撑基板，同时最小化转印层的起泡和表面粗糙度。 优选地，第一种类的植入剂量在所有植入剂量的约40至60％和通常约50％之间。 该方法优选用于形成或制造SeOI（半导体绝缘体）结构。

    Methods for making substrates and substrates formed therefrom
    19.
    发明申请
    Methods for making substrates and substrates formed therefrom 审中-公开
    制造基材和由其形成的基材的方法

    公开(公告)号：US20070141803A1

    公开(公告)日：2007-06-21

    申请号：US11505668

    申请日：2006-08-16

    申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen

    发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

    摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support.

    摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。

    Composite structure with high heat dissipation
    20.
    发明申请
    Composite structure with high heat dissipation 有权
    复合结构散热性好

    公开(公告)号：US20060091400A1

    公开(公告)日：2006-05-04

    申请号：US11020040

    申请日：2004-12-21

    申请人： Bruce Faure ,  Alice Boussagol

    发明人： Bruce Faure ,  Alice Boussagol

    IPC分类号： H01L29/15

    CPC分类号： H01L21/76254

    摘要： A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600°°K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.

    摘要翻译： 公开了一种复合结构，其包括支撑晶片和支撑晶片上的分层结构。 层状结构包括至少一层单晶材料和至少一层电介质材料。 另外，分层结构材料和每个层的厚度被选择为使得复合结构的环境温度和600°K之间的热阻抗是不大于单晶体的热阻抗的约1.3倍的值 SiC晶片具有与复合结构相同的尺寸。 复合结构为制造光学，电子或光电子元件提供了足够的散热特性。