公开(公告)号：US20070287273A1

公开(公告)日：2007-12-13

申请号：US11840696

申请日：2007-08-17

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/20

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US20120058621A1

公开(公告)日：2012-03-08

申请号：US13291468

申请日：2011-11-08

申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.

摘要翻译： 本发明涉及制造半导体衬底的方法。 在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

公开(公告)号：US20090289332A1

公开(公告)日：2009-11-26

申请号：US12536082

申请日：2009-08-05

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L29/02

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US20080014714A1

公开(公告)日：2008-01-17

申请号：US11832431

申请日：2007-08-01

申请人： Konstantin BOURDELLE ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Konstantin BOURDELLE ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.

摘要翻译： 一种制造混合基板的方法，所述方法通过施主和接收器基板的直接接合，其中每个基板具有相应的正面和表面，其中所述接收器基板的前表面具有靠近所述表面的半导体材料，所述施主基板包括： 定义要转移的层的弱点。 该方法包括通过在惰性气氛中将接收器基底的表面暴露于约900℃至约1200℃的温度至少30秒来制备基底表面; 将所制备的基板的正面直接接合在一起以形成复合基板; 对复合基板进行热处理以增加供体和接收器基板的前表面之间的结合强度; 以及通过在弱化区域分离供体基质的剩余部分而从施主衬底转移层。

公开(公告)号：US20070077729A1

公开(公告)日：2007-04-05

申请号：US11481696

申请日：2006-07-05

申请人： Olivier Rayssac ,  Takeshi Akatsu ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Olivier Rayssac ,  Takeshi Akatsu ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/76259 ,  Y10S117/915

摘要： The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.

摘要翻译： 本发明涉及一种制造由半导体材料制成的剥离衬底的方法，该方法包括在两个衬底释放层之间产生可逆连接，其特征在于可逆连接由以第一材料为基础的连接层形成， 连接层还包括设置成便于释放衬底的第二材料的纳米颗粒聚集区，选择第一和第二材料以便即使当衬底暴露于热处理时，也可以维持可逆连接的结合能基本恒定。

公开(公告)号：US07544265B2

公开(公告)日：2009-06-09

申请号：US11481696

申请日：2006-07-05

申请人： Pierre Rayssac, legal representative ,  Gisele Rayssac, legal representative ,  Takeshi Akatsu

发明人： Olivier Rayssac

IPC分类号： B44C1/17 ,  B29C37/02 ,  B29C35/02 ,  B32B37/06 ,  B32B37/02 ,  B32B38/18 ,  H01L21/322 ,  H01L21/324 ,  H01L21/304 ,  B44C1/22 ,  B32B37/16 ,  B32B38/08 ,  B32B38/10 ,  H01L21/42

CPC分类号： H01L21/76254 ,  H01L21/76259 ,  Y10S117/915

摘要： The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.

摘要翻译： 本发明涉及一种制造由半导体材料制成的剥离衬底的方法，该方法包括在两个衬底释放层之间产生可逆连接，其特征在于可逆连接由以第一材料为基础的连接层形成， 连接层还包括设置成便于释放衬底的第二材料的纳米颗粒聚集区，选择第一和第二材料以便即使当衬底暴露于热处理时，也可以维持可逆连接的结合能基本上恒定。

公开(公告)号：US20080014712A1

公开(公告)日：2008-01-17

申请号：US11624070

申请日：2007-01-17

申请人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.

摘要翻译： 本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。 所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。 键合的衬底可用于电子，光学或光电子应用。