Method and system for the reduction of off-state current in field effect
transistors
    14.
    发明授权
    Method and system for the reduction of off-state current in field effect transistors 失效
    在场效应晶体管中减少截止电流的方法和系统

    公开(公告)号:US5945866A

    公开(公告)日:1999-08-31

    申请号:US807611

    申请日:1997-02-27

    IPC分类号: G09G3/36

    摘要: A method for reducing the field dependence of an off-state current flow condition in a field-effect transistor having a source electrode, a drain electrode and a gate electrode, includes the steps of: applying a far off-state bias between the drain electrode and the gate electrode to drive a conduction channel in the field effect transistor into a far off-state; and applying a far off-state bias between the source electrode and the gate electrode to again drive the conduction channel into a far off-state; wherein both applying steps cause application of the far off-state bias for a sufficient time to reduce gate voltage dependency of off-state current flow in the conduction channel during a period when an off-state potential is applied to the gate electrode.

    摘要翻译: 一种用于降低具有源电极,漏电极和栅电极的场效应晶体管中的截止电流流动状态的场依赖性的方法包括以下步骤:在漏极之间施加远离状态偏置 以及栅电极,将场效应晶体管的导通通道驱动为远离状态; 以及在所述源电极和所述栅电极之间施加远离状态偏置以再次将所述导通通道驱动到远离状态; 其中两个施加步骤使得在关闭状态电位施加到栅极电极的时段期间施加远离状态偏压足够的时间以减小导通通道中截止态电流的栅极电压依赖性。