公开(公告)号：US11626577B2

公开(公告)日：2023-04-11

申请号：US17152692

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

Abstract: An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.

公开(公告)号：US20210226169A1

公开(公告)日：2021-07-22

申请号：US17152692

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.

公开(公告)号：US11968856B2

公开(公告)日：2024-04-23

申请号：US17493508

申请日：2021-10-04

Applicant: Applied Materials, Inc.

Inventor： Chung-Chih Wu ,  Po-Jui Chen ,  Hoang Yan Lin ,  Guo-Dong Su ,  Wei-Kai Lee ,  Chi-Jui Chang ,  Wan-Yu Lin ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H10K50/858 ,  H10K50/86 ,  H10K71/00

CPC classification number: H10K50/858 ,  H10K50/865 ,  H10K71/00

Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

公开(公告)号：US20220293878A1

公开(公告)日：2022-09-15

申请号：US17824835

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H01L51/00 ,  H01L51/42

Abstract: A light-emitting diode (LED) structure includes a light-emitting diode including an emissive electroluminescent layer situated between two electrodes, a light extraction layer (LEL) comprising a UV-cured ink, and a UV blocking layer between the LEL and the light-emitting diode. The UV blocking layer has a thickness of 50-500 nm and at least 90% absorption to UV light of wavelengths for curing the UV-cured ink.

公开(公告)号：US11296296B2

公开(公告)日：2022-04-05

申请号：US16685968

申请日：2019-11-15

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H01L51/42

Abstract: An organic light-emitting diode (OLED) structure includes a stack of OLED layers that includes a light emission zone having a planar portion, and a light extraction layer formed of a UV-cured ink disposed over the light emission zone of the stack of OLED layers. The light extraction layer has a gradient in index of refraction along an axis normal to the planar portion.

公开(公告)号：US20210408494A1

公开(公告)日：2021-12-30

申请号：US17471074

申请日：2021-09-09

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/52 ,  H01L51/56

Abstract: A method for manufacturing an organic light-emitting diode (OLED) structure includes depositing a light extraction layer (LEL) over a stack of OLED layers by directing fluid droplets of a LEL precursor to an array of well structures separated by plateau areas. Each well structure includes a recess with sidewalls and a floor, and the plateau areas have rounded top surfaces such that the droplets of the LEL precursor are guided into recesses of the well structures. The droplets of the LEL precursor are cured to solidify the LEL in the recess.

公开(公告)号：US20210159464A1

公开(公告)日：2021-05-27

申请号：US16696971

申请日：2019-11-26

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/52 ,  H01L51/56

Abstract: An organic light-emitting diode (OLED) structure includes a substrate, a dielectric layer on the substrate having an array of well structures with each well structure including a recess with side walls and a floor and the recesses are separated by plateaus having rounded top surfaces, a stack of OLED layers covering at least the floor of the well, and a light extraction layer (LEL) in the well over the stack of OLED layers.

公开(公告)号：US10381454B2

公开(公告)日：2019-08-13

申请号：US15411724

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Xuena Zhang ,  Dong-Kil Yim ,  Wenqing Dai ,  Harvey You ,  Tae Kyung Won ,  Hsiao-Lin Yang ,  Wan-Yu Lin ,  Yun-chu Tsai

IPC: H01L21/02 ,  H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L49/02 ,  G02F1/1362 ,  G02F1/1368

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.