公开(公告)号：US11118263B2

公开(公告)日：2021-09-14

申请号：US16408809

申请日：2019-05-10

Applicant: Applied Materials, Inc. ,  University of California, San Diego

Inventor： Yogita Pareek ,  Kevin A. Papke ,  Emily Sierra Thomson ,  Mahmut Sami Kavrik ,  Andrew C. Kummel

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23C16/20 ,  C23C16/34

Abstract: A method of forming a protective coating film for halide plasma resistance includes depositing a seed layer on a surface of an article via an atomic layer deposition (ALD) process, depositing a rare-earth containing oxide layer on the seed layer via an ALD process, and exposing the rare-earth containing oxide layer to fluorine-containing plasma.

公开(公告)号：US10553425B2

公开(公告)日：2020-02-04

申请号：US15714162

申请日：2017-09-25

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Jessica S. Kachian ,  Naomi Yoshida ,  Mei Chang ,  Mary Edmonds ,  Andrew C. Kummel ,  Sang Wook Park ,  Hyunwoong Kim

IPC: H01L21/02

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

公开(公告)号：US10373824B2

公开(公告)日：2019-08-06

申请号：US15727351

申请日：2017-10-06

Applicant: Applied Materials, Inc.

Inventor： Andrew C. Kummel ,  Mary Edmonds ,  Mei Chang ,  Jessica S. Kachian

IPC: C23C16/24 ,  H01L21/02

Abstract: Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1−xAs, InxGa1−xSb, InxGa1−xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

公开(公告)号：US09773663B2

公开(公告)日：2017-09-26

申请号：US15230218

申请日：2016-08-05

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Jessica S. Kachian ,  Naomi Yoshida ,  Mei Chang ,  Mary Edmonds ,  Andrew C. Kummel ,  Sang Wook Park ,  Hyunwoong Kim

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02299 ,  H01L21/02301 ,  H01L21/02304

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

公开(公告)号：US09607920B2

公开(公告)日：2017-03-28

申请号：US15060795

申请日：2016-03-04

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Mary Edmonds ,  Andrew C. Kummel ,  Atif M. Noori

IPC: H01L21/02 ,  H01L23/31 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/24 ,  C23C16/45523 ,  H01L21/02123 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/0262 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.