公开(公告)号：US20240360549A1

公开(公告)日：2024-10-31

申请号：US18140179

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Byunghoon Yoon ,  Joung-Joo Lee ,  Avgerinos V. Gelatos ,  Mark J. Saly

IPC: C23C16/34 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/34 ,  C23C16/45527 ,  H01L21/76844 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5226

Abstract: A method includes performing a reactant step of a deposition cycle of a deposition process to form a molybdenum (Mo)-based material, performing a Mo precursor step of the deposition cycle, and performing a treatment step of the deposition cycle. Performing the reactant step includes introducing a reactant, performing the Mo precursor step includes introducing a Mo precursor, and performing the treatment step includes introducing a treatment gas. The deposition process is performed at a temperature that is less than or equal to about 450° C.

公开(公告)号：US20230187282A1

公开(公告)日：2023-06-15

申请号：US17551381

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： Thomas Anthony Empante ,  Avgerinos V. Gelatos ,  Zhibo Yuan ,  Liqi Wu ,  Joung Joo Lee ,  Byunghoon Yoon

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823814 ,  H01L27/092 ,  H01L21/76843

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US20220325410A1

公开(公告)日：2022-10-13

申请号：US17847351

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/455 ,  C23C28/02 ,  C23C16/02 ,  H01L21/02

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20180155827A1

公开(公告)日：2018-06-07

申请号：US15830608

申请日：2017-12-04

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Siddarth Krishnan ,  Paul F. Ma ,  Sang Ho Yu

IPC: C23C16/34 ,  C23C16/32 ,  C23C16/455

CPC classification number: C23C16/34 ,  C23C16/18 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45553

Abstract: Methods for depositing a film comprising exposing a substrate surface to a metal precursor and a hydrazine derivative to form a metal containing film are described.