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公开(公告)号:USD1009817S1
公开(公告)日:2024-01-02
申请号:US29809532
申请日:2021-09-28
Applicant: Applied Materials, Inc.
Designer: Zubin Huang , Srinivas Tokur Mohana , Shreyas Patil Shanthaveeraswamy , Sandesh Yadamane , Jallepally Ravi , Harpreet Singh , Manjunatha Koppa
Abstract: FIG. 1 is a front isometric top left-side view of a shadow ring lift pin.
FIG. 2 is a front isometric bottom left-side view thereof.
FIG. 3 is a left-side view thereof.
FIG. 4 is a front-side view thereof.
FIG. 5 is a right-side view thereof.
FIG. 6 is a back-side view thereof.
FIG. 7 is a top plan view thereof.
FIG. 8 is a bottom plan view thereof; and,
FIG. 9 is an enlarged partial view of the section 9 shown in FIG. 4.
The broken lines in the drawings illustrate portions of the shadow ring lift pin that form no part of the claimed design.-
公开(公告)号:US20230307211A1
公开(公告)日:2023-09-28
申请号:US17704840
申请日:2022-03-25
Applicant: Applied Materials, Inc.
Inventor: Aravind Miyar Kamath , Cheng-Hsiung Matthew Tsai , Manjunatha Koppa
CPC classification number: H01J37/32009 , H01J37/20 , H01J2237/3321 , H01J2237/20
Abstract: Process kits for processing chambers and processing chambers having a lower shield and lower shield ring are described. The lower shield has a ring-shaped body with an inner wall and an outer wall, a top wall and a bottom wall with an outer ledge wall extends outwardly from a lower portion of the outer wall to an outer ledge outer wall. The lower shield ring has a ramped lower inner wall with a top face spaced a distance from the bottom face of the upper inner wall so that the distance decreases from the lower inner wall to an inside surface of the outer wall. At least one upper opening extends through the top portion of the lower shield ring and at least one opening extends through the lower portion of the lower shield ring. Upper shields configured to cooperatively interact with the lower shield and lower shield ring are also described.
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公开(公告)号:USD997894S1
公开(公告)日:2023-09-05
申请号:US29809534
申请日:2021-09-28
Applicant: Applied Materials, Inc.
Designer: Zubin Huang , Srinivas Tokur Mohana , Shreyas Patil Shanthaveeraswamy , Sandesh Yadamane , Jallepally Ravi , Harpreet Singh , Manjunatha Koppa
Abstract: FIG. 1 is a back isometric top left-side view of a shadow ring lift assembly.
FIG. 2 is a back isometric bottom left-side view thereof.
FIG. 3 is a top plan view thereof.
FIG. 4 is a bottom plan view thereof.
FIG. 5 is a back-side view thereof.
FIG. 6 is a front-side view thereof.
FIG. 7 is a left-side view thereof; and,
FIG. 8 is a right-side view thereof.
The broken lines in the drawings illustrate portions of the shadow ring lift assembly that form no part of the claimed design.-
公开(公告)号:US10892180B2
公开(公告)日:2021-01-12
申请号:US14450241
申请日:2014-08-02
Applicant: APPLIED MATERIALS, INC.
Inventor: Bonnie T. Chia , Jallepally Ravi , Manjunatha Koppa , Vinod Konda Purathe , Cheng-Hsiung Matthew Tsai , Aravind Miyar Kamath
IPC: H01L21/687 , C23C16/46 , H01L21/683 , H01L21/67 , C30B25/12
Abstract: Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.
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公开(公告)号:US10711348B2
公开(公告)日:2020-07-14
申请号:US14641378
申请日:2015-03-07
Applicant: APPLIED MATERIALS, INC.
Inventor: Cheng-Hsiung Tsai , Youqun Dong , Manjunatha Koppa
IPC: C23C16/458 , C23C16/46 , C23C16/455 , H01L21/687
Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a cover plate for a substrate processing chamber includes: an outer portion; and a raised inner portion having a thermally emissive layer, wherein a thermal emissivity of the thermally emissive layer varies across the thermally emissive layer.
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