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    Target retaining apparatus
    2.
    发明授权
    Target retaining apparatus 有权

    公开(公告)号：US10199204B2

    公开(公告)日：2019-02-05

    申请号：US14600915

    申请日：2015-01-20

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Srinivasa Yedla ,  Sundarapandian Reddy ,  Uday Pai ,  Kirankumar Savandaiah ,  Thanh X. Nguyen ,  Muhammad M. Rasheed ,  Jallepally Ravi

    IPC: H01J37/34

    Abstract: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.

    DUAL PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL
    5.
    发明申请
    DUAL PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL 有权

    公开(公告)号：US20220319837A1

    公开(公告)日：2022-10-06

    申请号：US17844346

    申请日：2022-06-20

    Applicant: Applied Materials, Inc.

    Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Yu Lei ,  Dien-Yeh Wu ,  Jallepally Ravi

    IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  B08B7/00

    Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

    Processing Chamber With Multiple Plasma Units
    6.
    发明申请
    Processing Chamber With Multiple Plasma Units 有权

    公开(公告)号：US20220319813A1

    公开(公告)日：2022-10-06

    申请号：US17844245

    申请日：2022-06-20

    Applicant: Applied Materials, Inc.

    Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

    IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  H05H1/46

    Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

    Methods and apparatus for rapidly cooling a substrate
    7.
    发明授权
    Methods and apparatus for rapidly cooling a substrate 有权

    公开(公告)号：US09779971B2

    公开(公告)日：2017-10-03

    申请号：US14251134

    申请日：2014-04-11

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Jallepally Ravi ,  Steven V. Sansoni ,  Kirankumar Savandaiah

    IPC: H01L21/67

    CPC classification number: H01L21/67109

    Abstract: Embodiments of methods and apparatus for rapidly cooling a substrate are provided herein. In some embodiments, a cooling chamber for cooling a substrate includes a chamber body having an inner volume; a substrate support disposed in the chamber and having a support surface to support a substrate; a plate disposed in the chamber body opposite the substrate support, wherein the substrate support and the plate are movable with respect to each other between a first position and a second position, wherein when in the first position the substrate support and the plate are disposed away from each other such that the support surface is exposed to a first volume within the inner volume, wherein when in the second position the substrate support and the plate are disposed adjacent to each other such that the support surface is exposed to a second volume within the inner volume, and wherein the second volume is smaller than the first volume; a plurality of flow channels disposed in one or more of the plate or the substrate support to flow a coolant; and a gas inlet to provide a gas into the second volume.

    Processing chamber with multiple plasma units
    8.
    发明授权
    Processing chamber with multiple plasma units 有权

    公开(公告)号：US12230479B2

    公开(公告)日：2025-02-18

    申请号：US18599767

    申请日：2024-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

    IPC: C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

    Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

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