公开(公告)号：US11631589B2

公开(公告)日：2023-04-18

申请号：US17307636

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3065 ,  H01L27/1157 ,  H01J37/305

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

公开(公告)号：US20220165580A1

公开(公告)日：2022-05-26

申请号：US17100141

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Rohan Puligoru Reddy ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/67

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a substrate housed in a processing region with the plasma effluents. The substrate may define an exposed region of tungsten oxide. The contacting may produce a tungsten oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the tungsten oxy-fluoride material with the etchant precursor. The methods may include removing the tungsten oxy-fluoride material.

公开(公告)号：US20250087494A1

公开(公告)日：2025-03-13

申请号：US18244583

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Wanxing Xu ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311

Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing hardmask material and an exposed region of a material characterized by a dielectric constant of less than or about 4.0. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the metal-containing hardmask material.

公开(公告)号：US20230386830A1

公开(公告)日：2023-11-30

申请号：US17827356

申请日：2022-05-27

Applicant: Applied Materials, Inc.

Inventor： Xiaolin C. Chen ,  Baiwei Wang ,  Rohan Puligoru Reddy ,  Wanxing Xu ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/02 ,  H01L29/423 ,  H01L29/49 ,  H01L21/311

CPC classification number: H01L21/02244 ,  H01L29/42392 ,  H01L29/495 ,  H01L21/31122

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned. The substrate may include a trench formed between two columns and molybdenum-containing metal regions in a plurality of recesses formed in at least one of the columns. At least two of the molybdenum-containing metal regions may be connected by a molybdenum-containing first liner formed on at least a portion of a sidewall of the trench. The methods may include forming a plasma of the oxygen-containing precursor. The methods may include contacting the molybdenum-containing first liner with plasma effluents of the oxygen-containing precursor, thereby forming an oxidized portion of molybdenum. The methods may include providing a halide precursor. The methods may include contacting oxidized portion of the molybdenum with plasma effluents of the halide precursor, thereby removing the oxidized portion of molybdenum from the sidewall of the trench.

公开(公告)号：US20230015080A1

公开(公告)日：2023-01-19

申请号：US17376337

申请日：2021-07-15

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311 ,  H01J37/32

Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.

公开(公告)号：US11488835B2

公开(公告)日：2022-11-01

申请号：US17100141

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Rohan Puligoru Reddy ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3065

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a substrate housed in a processing region with the plasma effluents. The substrate may define an exposed region of tungsten oxide. The contacting may produce a tungsten oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the tungsten oxy-fluoride material with the etchant precursor. The methods may include removing the tungsten oxy-fluoride material.

公开(公告)号：US20220344172A1

公开(公告)日：2022-10-27

申请号：US17240149

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/306 ,  H01L21/02 ,  C23F4/02

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.

公开(公告)号：US11062921B1

公开(公告)日：2021-07-13

申请号：US17018229

申请日：2020-09-11

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Anchuan Wang ,  Rohan Puligoru Reddy ,  Xiaolin Chen

IPC: H01L21/67 ,  H01L21/311

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of an aluminum-containing material. The contacting may produce an aluminum halide material. The methods may include flowing an etchant precursor into the substrate processing region. The methods may include contacting the aluminum halide material with the etchant precursor. The methods may include removing the aluminum halide material.