公开(公告)号：US11062921B1

公开(公告)日：2021-07-13

申请号：US17018229

申请日：2020-09-11

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Anchuan Wang ,  Rohan Puligoru Reddy ,  Xiaolin Chen

IPC: H01L21/67 ,  H01L21/311

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of an aluminum-containing material. The contacting may produce an aluminum halide material. The methods may include flowing an etchant precursor into the substrate processing region. The methods may include contacting the aluminum halide material with the etchant precursor. The methods may include removing the aluminum halide material.

公开(公告)号：US08889566B2

公开(公告)日：2014-11-18

申请号：US13668657

申请日：2012-11-05

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Brian Underwood ,  Kiran V. Thadani ,  Xiaolin Chen ,  Abhishek Dube ,  Jingmei Liang

IPC: C23C16/32 ,  C23C16/34 ,  C23C16/50 ,  H01L21/02 ,  H01L21/31 ,  H01L21/318

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积法沉积含硅膜。 含硅膜在低基板温度下沉积时是可流动的。 将硅前体（例如甲硅烷基胺，高级硅烷或卤代硅烷）输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸气或气体与硅衬底加工区域中的硅前体结合，并且可包括氨，氮（N 2），氩，氢（H 2）和/或氧（O 2）。 已经发现本文公开的与这些蒸汽/气体组合组合的设备结构在基板温度低于或约200℃时导致可流动的沉积，当使用较低功率激发局部等离子体时。

公开(公告)号：US11728177B2

公开(公告)日：2023-08-15

申请号：US17173329

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Oliver Jan ,  Rohan Puligoru Reddy ,  Xiaolin Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01L21/02614 ,  H01L21/3065 ,  H01L21/30655 ,  H01J2237/3341

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting a substrate housed in a processing region with the oxygen plasma effluents. The substrate may define an exposed region of titanium nitride. The contacting may produce an oxidized surface on the titanium nitride. The methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce halogen plasma effluents. The methods may include contacting the oxidized surface on the titanium nitride with the halogen plasma effluents. The methods may include removing the oxidized surface on the titanium nitride.

公开(公告)号：US20220254648A1

公开(公告)日：2022-08-11

申请号：US17173329

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Oliver Jan ,  Rohan Puligoru Reddy ,  Xiaolin Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting a substrate housed in a processing region with the oxygen plasma effluents. The substrate may define an exposed region of titanium nitride. The contacting may produce an oxidized surface on the titanium nitride. The methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce halogen plasma effluents. The methods may include contacting the oxidized surface on the titanium nitride with the halogen plasma effluents. The methods may include removing the oxidized surface on the titanium nitride.

公开(公告)号：US20140073144A1

公开(公告)日：2014-03-13

申请号：US13668657

申请日：2012-11-05

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Brian Underwood ,  Kiran V. Thadani ,  Xiaolin Chen ,  Abhishek Dube ,  Jingmei Liang

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积法沉积含硅膜。 含硅膜在低基板温度下沉积时是可流动的。 将硅前体（例如甲硅烷基胺，高级硅烷或卤代硅烷）输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸气或气体与硅衬底加工区域中的硅前体结合，并且可包括氨，氮（N 2），氩，氢（H 2）和/或氧（O 2）。 已经发现本文公开的与这些蒸汽/气体组合组合的设备结构在基板温度低于或约200℃时导致可流动的沉积，当使用较低功率激发局部等离子体时。