公开(公告)号：US20200370174A1

公开(公告)日：2020-11-26

申请号：US16806656

申请日：2020-03-02

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Jiyong HUANG ,  Joseph C. WERNER ,  Stanley WU ,  Mahesh Adinath KANAWADE ,  Yikai CHEN ,  Yixing LIN ,  Ying MA

IPC: C23C16/44 ,  C01F17/265

Abstract: Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

公开(公告)号：US20190249306A1

公开(公告)日：2019-08-15

申请号：US16259285

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Chang Hee SHIN

IPC: C23C16/54 ,  C23C16/44 ,  H01L31/18 ,  H01L31/0384

CPC classification number: C23C16/54 ,  C23C16/4404 ,  H01L31/0384 ,  H01L31/075 ,  H01L31/18

Abstract: Apparatus and methods are provided for reducing cross-contamination between deposition operations during the fabrication of heterojunction cells. An apparatus includes the substrate carrier including a plurality of pockets, and the carrier mask defining the openings that are sized and positioned in correspondence to the pockets of the substrate carrier. The substrate carrier carries a plurality of substrates into an i-layer deposition chamber and a p-layer deposition chamber. The substrate carrier is masked by the carrier mask during deposition of a p-layer. In-situ film mask layer can be used with or without the carrier mask. The in-situ film mask layer is formed of SiN or SiNO and can be deposited over the p-layer. The p-layer is a p-type nanocrystalline SiOx layer formed from a combination of SiH4, B2H6, H2 or CO2. A single substrate carrier can be repeatedly used for sequential deposition of an i-layer and a p-layer without cross contamination.

公开(公告)号：US20150333213A1

公开(公告)日：2015-11-19

申请号：US14698395

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Su Ho CHO

IPC: H01L31/18 ,  C23C16/505 ,  C23C16/26

CPC classification number: C23C16/26 ,  C23C16/4581 ,  C23C16/505 ,  H01L21/68757 ,  H01L21/68771 ,  H01L31/1876

Abstract: A substrate carrier having a diamond-like carbon coating disposed thereon is provided. The diamond-like carbon coating may have the property of being substantially resistant to commonly used cleaning processes performed during the fabrication of photovoltaic cells, such as cleaning processes using an NF3 plasma. Additionally, a method of forming a diamond-like carbon coating on a substrate carrier is provided. The method includes positioning a substrate carrier in a processing chamber and forming a diamond-like carbon coating thereon. Forming the diamond-like carbon coating includes flowing a carbon-containing gas into a processing chamber and dissociating the carbon-containing gas. Furthermore, a method of quick removal of diamond-like carbon coatings from processing chamber walls, processing chamber components, substrate carriers, and other objects is provided.

Abstract translation: 提供了其上设置有类金刚石碳涂层的基板载体。 类金刚石碳涂层可具有基本上抵抗在光伏电池制造期间所执行的常用清洁工艺的性质，例如使用NF 3等离子体的清洁工艺。 另外，提供了在基板载体上形成类金刚石碳涂层的方法。 该方法包括将衬底载体定位在处理室中并在其上形成类金刚石碳涂层。 形成类金刚石碳涂层包括使含碳气体流入处理室并解离含碳气体。 此外，提供了从处理室壁，处理室部件，基板载体和其它物体中快速去除类金刚石碳涂层的方法。

公开(公告)号：US20140213016A1

公开(公告)日：2014-07-31

申请号：US14160171

申请日：2014-01-21

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Hari K. PONNEKANTI

IPC: H01L31/18

CPC classification number: H01L31/056 ,  H01L31/02167 ,  H01L31/1868 ,  Y02E10/52 ,  Y02P70/521

Abstract: Embodiments of the invention generally relate to methods for fabricating photovoltaic devices, and more particularly to methods for in-situ cleaning of a solar cell substrates. In one embodiment, a method of manufacturing a solar cell device is provided. The method comprises exposing a single or poly crystalline silicon substrate to a wet clean process to clean the surfaces of the crystalline substrate, loading the crystalline silicon substrate into a processing system having a vacuum environment, exposing at least one surface of the crystalline silicon substrate to an in-situ cleaning process in the vacuum environment of the processing system, and forming one or more passivation layers on at least one surface of the crystalline silicon substrate in the processing system.

Abstract translation: 本发明的实施例一般涉及用于制造光伏器件的方法，更具体地涉及太阳能电池基板的原位清洁方法。 在一个实施例中，提供了一种制造太阳能电池装置的方法。 该方法包括将单晶或多晶硅衬底暴露于湿清洁工艺以清洁晶体衬底的表面，将晶体硅衬底装载到具有真空环境的处理系统中，将晶体硅衬底的至少一个表面暴露于 在处理系统的真空环境中的原位清洁工艺，以及在处理系统中在晶体硅衬底的至少一个表面上形成一个或多个钝化层。