公开(公告)号：US10777391B2

公开(公告)日：2020-09-15

申请号：US15015849

申请日：2016-02-04

Applicant: Applied Materials, Inc.

Inventor： Kadthala R. Narendrnath ,  Govinda Raj ,  Goichi Yoshidome ,  Bopanna Ichettira Vasantha ,  Umesh M. Kelkar

IPC: C23C14/34 ,  H01J37/32 ,  B22F3/105 ,  B22F3/00 ,  B33Y80/00

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

公开(公告)号：US20160068958A1

公开(公告)日：2016-03-10

申请号：US14785009

申请日：2014-04-10

Applicant: Umesh M KELKAR ,  Kallol BERA ,  Karthik RAMANATHAN ,  Garry K KWONG ,  Joseph YUDOVSKY ,  Applied Materials, Inc.

Inventor： Umesh M. Kelkar ,  Kallol Bera ,  Karthik Ramanathan ,  Garry K Kwong ,  Joseph Yudovsky

IPC: C23C16/46 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/46 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115

Abstract: Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.

Abstract translation: 描述了在基座组件上处理多个半导体晶片的装置和方法，使得基座组件上的温度是均匀的。 多个线性灯被定位和控制在区域中以提供均匀的加热。

公开(公告)号：US09123758B2

公开(公告)日：2015-09-01

申请号：US14154346

申请日：2014-01-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Agus Sofian Tjandra ,  Kalyanjit Ghosh ,  Christopher S. Olsen ,  Umesh M. Kelkar

IPC: F15C1/16 ,  H01L21/67

CPC classification number: H01L21/67115 ,  H01L21/67017 ,  H01L21/6719 ,  Y10T137/87652

Abstract: Methods and apparatus for mixing and delivery of process gases are provided herein. In some embodiments, a gas injection apparatus includes an elongate top plenum comprising a first gas inlet; an elongate bottom plenum disposed beneath and supporting the top plenum, the bottom plenum comprising a second gas inlet; a plurality of first conduits disposed through the bottom plenum and having first ends fluidly coupled to the top plenum and second ends disposed beneath the bottom plenum; and a plurality of second conduits having first ends fluidly coupled to the bottom plenum and second ends disposed beneath the bottom plenum; wherein a lower end of the bottom plenum is adapted to fluidly couple the gas injection apparatus to a mixing chamber such that the second ends of the plurality of first conduits and the second ends of the plurality of second conduits are in fluid communication with the mixing chamber.

Abstract translation: 本文提供了用于混合和输送工艺气体的方法和装置。 在一些实施例中，气体注入装置包括细长顶部增压室，其包括第一气体入口; 设置在所述顶部增压室下方并支撑所述顶部增压室的细长底部增压室，所述底部增压室包括第二气体入口; 多个第一导管，其设置穿过所述底部集气室，并且具有流体耦合到所述顶部增压室的第一端和设置在所述底部增压室下方的第二端; 以及多个第二导管，其具有流体地联接到所述底部增压室的第一端和设置在所述底部增压室下方的第二端; 其中所述底部增压室的下端适于将所述气体注入装置流体地耦合到混合室，使得所述多个第一导管的第二端和所述多个第二导管的所述第二端与所述混合室流体连通 。