公开(公告)号：US10290459B2

公开(公告)日：2019-05-14

申请号：US16163226

申请日：2018-10-17

申请人： Applied Materials, Inc.

发明人： Govinda Raj ,  Simon Yavelberg ,  Ramprakash Sankarakrishnan

IPC分类号： H01J23/00 ,  B22F5/10 ,  B33Y80/00 ,  B22F3/105 ,  H01J25/50

摘要： Magnetron configurations that provide more efficient and/or more uniform cooling characteristics and methods for forming the magnetrons are provided. The magnetron includes one or more flow directing structures disposed between parallel cooling fins. The flow directing structures direct air flow across various surfaces of the cooling fins that otherwise would be obstructed by magnetron components, reducing the incidence and/or magnitude of hot spots on the cooling fins and/or on other magnetron components. The flow directing structures also adjust flow rates to improve cooling efficiency.

公开(公告)号：US11676802B2

公开(公告)日：2023-06-13

申请号：US17095577

申请日：2020-11-11

申请人： Applied Materials, Inc.

发明人： Wendell Glenn Boyd, Jr. ,  Govinda Raj ,  Matthew James Busche

IPC分类号： G01D5/26 ,  H01J37/32 ,  H01L21/683 ,  C23C16/458 ,  G01L11/02 ,  G01D11/24

CPC分类号： H01J37/3244 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/3299 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/6833 ,  G01D5/26 ,  G01D5/266 ,  G01D5/268 ,  G01D11/245 ,  G01L11/025 ,  H01J2237/334

摘要： Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to provide the benefit of allowing gas to flow past the sensor assembly when positioned in the gas hole.

公开(公告)号：US11114326B2

公开(公告)日：2021-09-07

申请号：US16293437

申请日：2019-03-05

申请人： Applied Materials, Inc.

发明人： Wendell Glenn Boyd, Jr. ,  Jim Zhongyi He ,  Ramesh Gopalan ,  Robert T. Hirahara ,  Govinda Raj

IPC分类号： H01L21/683 ,  H01J37/32

摘要： Methods for chucking and de-chucking a substrate from an electrostatic chucking (ESC) substrate support to reduce scratches of the non-active surface of a substrate include simultaneously increasing a voltage applied to a chucking electrode embedded in the ESC substrate support and a backside gas pressure in a backside volume disposed between the substrate and the substrate support to chuck the substrate and reversing the process to de-chuck the substrate.

公开(公告)号：US11054317B2

公开(公告)日：2021-07-06

申请号：US16566409

申请日：2019-09-10

申请人： Applied Materials, Inc.

发明人： Charles G. Potter ,  Wendell Glenn Boyd, Jr. ,  Govinda Raj ,  Robert Hirahara

IPC分类号： G01L1/04 ,  G01L1/16 ,  H01L21/683

摘要： Disclosed herein is a method of measuring the chucking force of an electrostatic chuck. The method comprises placing a sensor wafer onto the electrostatic chuck, wherein the sensor wafer comprises a plurality of pressure sensors, and applying a chucking voltage to the electrostatic chuck. The method further comprises measuring the chucking force with the plurality of pressure sensors to determine a first chucking force profile of the electrostatic chuck, and processing a plurality of wafers on the electrostatic chuck. The method further comprises placing the sensor wafer onto the electrostatic chuck, and applying the chucking voltage to the electrostatic chuck. The method further comprises measuring the chucking force with the plurality of pressure sensors to determine a second chucking force profile of the electrostatic chuck.

公开(公告)号：US10005025B2

公开(公告)日：2018-06-26

申请号：US14877753

申请日：2015-10-07

申请人： Applied Materials, Inc.

发明人： Govinda Raj ,  Monika Agarwal ,  Hamid Mohiuddin ,  Kadthala R. Narendrnath

IPC分类号： B01D53/32 ,  B01D53/68 ,  H01J37/32

CPC分类号： B01D53/32 ,  B01D53/68 ,  B01D2257/2025 ,  B01D2257/2027 ,  B01D2257/2045 ,  B01D2257/2047 ,  B01D2258/0216 ,  B01D2259/818 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32844 ,  Y02C20/30

摘要： Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.

公开(公告)号：US09613846B2

公开(公告)日：2017-04-04

申请号：US14550106

申请日：2014-11-21

申请人： Applied Materials, Inc.

发明人： Govinda Raj ,  Cheng-Hsiung Tsai ,  Robert T. Hirahara ,  Kadthala R. Narendrnath ,  Manjunatha Koppa ,  Ross Marshall

IPC分类号： H02H7/30 ,  H01L21/687 ,  H01L21/683

CPC分类号： H01L21/6875 ,  H01L21/6831 ,  Y10T428/24298 ,  Y10T428/24314

摘要： Embodiments are directed to an electrostatic chuck surface having minimum contact area features. More particularly, embodiments of the present invention provide an electrostatic chuck assembly having a pattern of raised, elongated surface features for providing reduced particle generation and reduced wear of substrates and chucking devices.

公开(公告)号：US12027388B2

公开(公告)日：2024-07-02

申请号：US17104342

申请日：2020-11-25

申请人： Applied Materials, Inc.

发明人： Vilen K. Nestorov ,  Kaushik Rao ,  Govinda Raj

IPC分类号： H01L21/67 ,  H01K1/14 ,  H05B3/00 ,  H05B3/10

CPC分类号： H01L21/67115 ,  H01K1/14 ,  H05B3/0047 ,  H05B3/0033 ,  H05B3/0038 ,  H05B2203/002 ,  H05B2203/006 ,  H05B2203/014

摘要： Examples disclosed herein relate to a lamp configured to provide heat for a processing chamber. The lamp includes a housing filled with a gas. A filament is disposed within the housing. The filament has an upper diameter, a lower diameter, and a length. A pair of electrodes is electrically coupled to the filament. A pair of pins is electrically coupled to the pair of electrodes. The pair of pins is configured to transfer energy to the filament. A ratio between either the upper diameter or the lower diameter to the length is about 0.3. The upper diameter is not equal to the lower diameter.

公开(公告)号：US11330673B2

公开(公告)日：2022-05-10

申请号：US16189810

申请日：2018-11-13

申请人： Applied Materials, Inc.

发明人： Govinda Raj

IPC分类号： H05B3/14 ,  H01L21/67 ,  H05B1/02 ,  H01L21/687

摘要： A heater for a semiconductor processing chamber is disclosed that includes a ceramic body, and a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil having an inner central sector and an outer central sector, the inner central sector having a plurality of first peaks and the outer central sector having a plurality of second peaks, wherein the number of first peaks is less than about fifty-six, and the number of second peaks is less than about eighty.

公开(公告)号：US10662529B2

公开(公告)日：2020-05-26

申请号：US15141443

申请日：2016-04-28

申请人： Applied Materials, Inc.

发明人： Govinda Raj ,  Hanish Kumar ,  Lin Zhang ,  Stanley Wu

IPC分类号： C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C16/507

摘要： Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.

公开(公告)号：US10553473B2

公开(公告)日：2020-02-04

申请号：US14975119

申请日：2015-12-18

申请人： Applied Materials, Inc.

发明人： Govinda Raj ,  Kadthala R. Narendrnath ,  Bopanna Ichettira Vasantha ,  Simon Yavelberg

IPC分类号： H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  B33Y10/00 ,  B33Y80/00

摘要： An edge ring and process for fabricating an edge ring are disclosed herein. In one embodiment, an edge ring includes an annular body and a plurality of thermal breaks disposed within the annular body. The thermal breaks are disposed perpendicular to a center line of the annular body of the edge ring.