公开(公告)号：US11830706B2

公开(公告)日：2023-11-28

申请号：US16703140

申请日：2019-12-04

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Jian Li ,  Satish Radhakrishnan ,  Rui Cheng ,  Diwakar N. Kedlaya ,  Juan Carlos Rocha-Alvarez ,  Umesh M. Kelkar ,  Karthik Janakiraman ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Byung Seok Kwon

IPC: H01L21/67 ,  H05B3/10 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/46 ,  H05B3/14

CPC classification number: H01J37/32724 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/67103 ,  H05B3/10 ,  H05B3/143 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：US10221483B2

公开(公告)日：2019-03-05

申请号：US14691496

申请日：2015-04-20

Applicant: Applied Materials, Inc.

Inventor： Kartik Shah ,  Chaitanya A. Prasad ,  Kevin Joseph Bautista ,  Jeffrey Tobin ,  Umesh M. Kelkar ,  Lara Hawrylchak

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67

Abstract: Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.

公开(公告)号：US11239058B2

公开(公告)日：2022-02-01

申请号：US16412109

申请日：2019-05-14

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan Balaraman ,  Balamurugan Ramasamy ,  Kartik Shah ,  Mats Larsson ,  Kevin A. Papke ,  Rajasekhar Patibandla ,  Sathyanarayana Bindiganavale ,  Umesh M. Kelkar

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C28/04

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

公开(公告)号：US10508339B2

公开(公告)日：2019-12-17

申请号：US15663734

申请日：2017-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaoxiong Yuan ,  Yu Lei ,  Yi Xu ,  Kazuya Daito ,  Pingyan Lei ,  Dien-Yeh Wu ,  Umesh M. Kelkar ,  Vikash Banthia

IPC: C23C16/455 ,  H01L21/67

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US09818587B2

公开(公告)日：2017-11-14

申请号：US13827736

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC: H01J37/34 ,  C23C14/54 ,  C23C14/34 ,  C23C16/48 ,  H01L21/67 ,  H01L21/687 ,  H01L21/324 ,  H01L21/768 ,  C23C16/458 ,  H01L21/285 ,  H01L21/02

CPC classification number: C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

公开(公告)号：US11591689B2

公开(公告)日：2023-02-28

申请号：US16791264

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： Mats Larsson ,  Kevin A. Papke ,  Chirag Shaileshbhai Khairnar ,  Rajasekhar Patibandla ,  Karthikeyan Balaraman ,  Balamurugan Ramasamy ,  Kartik Shah ,  Umesh M. Kelkar

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/513 ,  C23C16/44 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US09863038B2

公开(公告)日：2018-01-09

申请号：US13828827

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Maurice E. Ewert ,  Anantha Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC: C23C14/58 ,  C23C14/34 ,  C23C14/54 ,  C23C16/458 ,  C23C16/48 ,  H01J37/34 ,  H01L21/67 ,  H01L21/687 ,  H01L21/285 ,  H01L21/768 ,  H01L21/324 ,  H01L21/02

CPC classification number: C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

公开(公告)号：US11810766B2

公开(公告)日：2023-11-07

申请号：US16401871

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan Balaraman ,  Sathyanarayana Bindiganavale ,  Rajasekhar Patibandla ,  Balamurugan Ramasamy ,  Kartik Shah ,  Umesh M. Kelkar ,  Mats Larsson ,  Kevin A. Papke ,  William M. Lu

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/34 ,  C23C14/06 ,  C23C16/06 ,  C23C14/16

CPC classification number: H01J37/32477 ,  C23C14/0641 ,  C23C14/16 ,  C23C16/06 ,  C23C16/34 ,  H01L21/68757

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

公开(公告)号：US11421322B2

公开(公告)日：2022-08-23

申请号：US16520646

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaoxiong Yuan ,  Yu Lei ,  Yi Xu ,  Kazuya Daito ,  Pingyan Lei ,  Dien-Yeh Wu ,  Umesh M. Kelkar ,  Vikash Banthia

IPC: C23C16/455 ,  H01L21/67

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US11569069B2

公开(公告)日：2023-01-31

申请号：US16945510

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Kadthala R. Narendrnath ,  Govinda Raj ,  Goichi Yoshidome ,  Bopanna Ichettira Vasantha ,  Umesh M. Kelkar

IPC: H01J37/32 ,  B22F10/20 ,  B33Y80/00

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.