公开(公告)号：US20150162214A1

公开(公告)日：2015-06-11

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3213 ,  H01L21/3205

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

Abstract translation: 提供了选择性沉积的方法。 某些方法描述了提供第一衬底表面; 提供第二衬底表面; 在所述第一和第二衬底表面上沉积第一层膜，其中所述沉积在所述第二衬底表面上具有孵育延迟，使得所述第一衬底表面上的所述第一层膜比沉积在所述第二衬底表面上的所述第一层膜厚 基材表面; 并且在所述第一和第二衬底表面上蚀刻所述第一层膜，其中所述第二衬底表面上的所述第一层膜至少被基本上去除，但所述第一衬底上的所述第一层膜仅被部分地去除。

公开(公告)号：US10005025B2

公开(公告)日：2018-06-26

申请号：US14877753

申请日：2015-10-07

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Monika Agarwal ,  Hamid Mohiuddin ,  Kadthala R. Narendrnath

IPC: B01D53/32 ,  B01D53/68 ,  H01J37/32

CPC classification number: B01D53/32 ,  B01D53/68 ,  B01D2257/2025 ,  B01D2257/2027 ,  B01D2257/2045 ,  B01D2257/2047 ,  B01D2258/0216 ,  B01D2259/818 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32844 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.

公开(公告)号：US09613846B2

公开(公告)日：2017-04-04

申请号：US14550106

申请日：2014-11-21

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Cheng-Hsiung Tsai ,  Robert T. Hirahara ,  Kadthala R. Narendrnath ,  Manjunatha Koppa ,  Ross Marshall

IPC: H02H7/30 ,  H01L21/687 ,  H01L21/683

CPC classification number: H01L21/6875 ,  H01L21/6831 ,  Y10T428/24298 ,  Y10T428/24314

Abstract: Embodiments are directed to an electrostatic chuck surface having minimum contact area features. More particularly, embodiments of the present invention provide an electrostatic chuck assembly having a pattern of raised, elongated surface features for providing reduced particle generation and reduced wear of substrates and chucking devices.

公开(公告)号：US10399202B2

公开(公告)日：2019-09-03

申请号：US15074089

申请日：2016-03-18

Applicant: Applied Materials, Inc.

Inventor： Yongqi Hu ,  Simon Yavelberg ,  Gangadhar Sheelavant ,  Kadthala R. Narendrnath

IPC: B24B37/32

Abstract: A retaining ring and a chemical mechanical planarization system (CMP) are disclosed. In one embodiment, a retaining ring for a polishing system includes a ring-shaped body having a polished inner diameter. The body has a bottom surface having grooves formed therein, an outer diameter wall, and an inner diameter wall, wherein the inner diameter wall is polished to a roughness average (Ra) of less than about 30 microinches (μin).

公开(公告)号：US09716012B2

公开(公告)日：2017-07-25

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

公开(公告)号：US20150275364A1

公开(公告)日：2015-10-01

申请号：US14666689

申请日：2015-03-24

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/56 ,  H01L21/68764 ,  H01L21/68771

Abstract: Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.

Abstract translation: 提供了用于在单个处理室内顺序沉积和退火膜的装置和方法。 位于与处理气体隔离的区域内的处理室内的能量源可用于快速地形成和分解衬底上的膜，而不会由于超过正在形成的器件的热量预算而损坏下层。

公开(公告)号：US11569069B2

公开(公告)日：2023-01-31

申请号：US16945510

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Kadthala R. Narendrnath ,  Govinda Raj ,  Goichi Yoshidome ,  Bopanna Ichettira Vasantha ,  Umesh M. Kelkar

IPC: H01J37/32 ,  B22F10/20 ,  B33Y80/00

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

公开(公告)号：US10777391B2

公开(公告)日：2020-09-15

申请号：US15015849

申请日：2016-02-04

Applicant: Applied Materials, Inc.

Inventor： Kadthala R. Narendrnath ,  Govinda Raj ,  Goichi Yoshidome ,  Bopanna Ichettira Vasantha ,  Umesh M. Kelkar

IPC: C23C14/34 ,  H01J37/32 ,  B22F3/105 ,  B22F3/00 ,  B33Y80/00

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

公开(公告)号：US10553473B2

公开(公告)日：2020-02-04

申请号：US14975119

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Kadthala R. Narendrnath ,  Bopanna Ichettira Vasantha ,  Simon Yavelberg

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  B33Y10/00 ,  B33Y80/00

Abstract: An edge ring and process for fabricating an edge ring are disclosed herein. In one embodiment, an edge ring includes an annular body and a plurality of thermal breaks disposed within the annular body. The thermal breaks are disposed perpendicular to a center line of the annular body of the edge ring.

公开(公告)号：US10177014B2

公开(公告)日：2019-01-08

申请号：US14050196

申请日：2013-10-09

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Daniel Martin ,  Robert T. Hirahara ,  Ashish Bhatnagar ,  Bopanna Vasanth ,  Prashanth Rao ,  Kadthala R. Narendrnath

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

Abstract: An apparatus for a substrate support heater and associated chamber components having reduced energy losses are provided. In one embodiment, a substrate support heater is provided. The substrate support heater includes a heater body having a first surface to receive a substrate and a second surface opposing the first surface, a heating element disposed in the heater body between the first surface and the second surface, and a thermal barrier disposed on the second surface of the heater body, wherein the thermal barrier comprises a first layer and a second layer disposed on the first layer.