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公开(公告)号：US20230067566A1
公开(公告)日：2023-03-02
申请号：US17461250
申请日：2021-08-30
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Binni Varghese , Vibhu Jindal
IPC: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of increasing multilayer film reflectance are disclosed. The EUV mask blanks comprise a bilayer film on a substrate. The bilayer film comprises a first film layer including silicon (Si), and a second film layer comprising an element selected from the group consisting of ruthenium (Ru), nickel (Ni), cobalt (Co), tungsten (W), iron (Fe), titanium (Ti) and silicides thereof. Some EUV mask blanks further comprise a multilayer reflective stack comprising alternating layers on the bilayer film and a capping layer on the multilayer reflective stack. Some EUV mask blanks include a smoothing layer selected from the group consisting of molybdenum silicide (MoSi), boron carbide (B4C) and silicon nitride (SiN) on the multilayer reflective stack, a capping layer on the smoothing layer, and an absorber layer on the capping layer.
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公开(公告)号：US11480865B2
公开(公告)日：2022-10-25
申请号：US17120789
申请日：2020-12-14
Applicant: Applied Materials, Inc.
Inventor： Vibhu Jindal , Sanjay Bhat , Wen Xiao , Vinodh Ramachandran
Abstract: Apparatus and methods for improving flatness of extreme ultraviolet (EUV) mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank and a cooling system. Interfacial layers of the EUV mask blank are selectively heated, resulting in improved flatness of the EUV mask blanks.
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公开(公告)号：US20210381967A1
公开(公告)日：2021-12-09
申请号：US16893547
申请日：2020-06-05
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Vibhu Jindal , Huajun Liu , Herng Yau Yoong
Abstract: Apparatus, methods and are disclosed for measuring refractive index of a material film. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of wavelengths and thickness values for the material film to determine the refractive index of the material film.
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公开(公告)号：US20210232040A1
公开(公告)日：2021-07-29
申请号：US17157088
申请日：2021-01-25
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Wen Xiao , Vibhu Jindal , Azeddine Zerrade
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
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公开(公告)号：US20210124252A1
公开(公告)日：2021-04-29
申请号：US17077176
申请日：2020-10-22
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Sanjay Bhat , Shiyu Liu , Binni Varghese , Vibhu Jindal , Azeddine Zerrade
Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.
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Patent Agency Ranking
公开(公告)号：US20210032742A1
公开(公告)日：2021-02-04
申请号：US16943292
申请日：2020-07-30
Applicant: Applied Materials, Inc.
Inventor： Vibhu Jindal , Shiyu Liu , Sanjay Bhat , Shuwei Liu , Wen Xiao
IPC: C23C14/56
Abstract: Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50° C. and subsequently cooling down to room, placing the PVD chamber component in a process chamber, reducing the pressure in the process chamber below atmospheric pressure and purging the process chamber with a gas, surface conditioning the surface of the PVD chamber component, and drying the surface of the PVD chamber component by directing a gas on the surface of the PVD chamber component.
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公开(公告)号：US20200332412A1
公开(公告)日：2020-10-22
申请号：US16850678
申请日：2020-04-16
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Vibhu Jindal , Sanjay Bhat
Abstract: A physical vapor deposition chamber comprising a rotating substrate support having a rotational axis, a first cathode having a radial center positioned off-center from a rotational axis of the substrate support is disclosed. A process controller comprising one or more process configurations selected from one or more of a first configuration to determine a rotation speed (v) for a substrate support to complete a whole number of rotations (n) around the rotational axis of the substrate support in a process window time (t) to form a layer of a first material on a substrate, or a second configuration to rotate the substrate support at the rotation speed (v).
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公开(公告)号：US20200277697A1
公开(公告)日：2020-09-03
申请号：US16801631
申请日：2020-02-26
Applicant: Applied Materials, Inc.
Inventor： Sanjay Bhat , Vibhu Jindal , Wen Xiao
Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.
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公开(公告)号：US11815803B2
公开(公告)日：2023-11-14
申请号：US17461250
申请日：2021-08-30
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Binni Varghese , Vibhu Jindal
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of increasing multilayer film reflectance are disclosed. The EUV mask blanks comprise a bilayer film on a substrate. The bilayer film comprises a first film layer including silicon (Si), and a second film layer comprising an element selected from the group consisting of ruthenium (Ru), nickel (Ni), cobalt (Co), tungsten (W), iron (Fe), titanium (Ti) and silicides thereof. Some EUV mask blanks further comprise a multilayer reflective stack comprising alternating layers on the bilayer film and a capping layer on the multilayer reflective stack. Some EUV mask blanks include a smoothing layer selected from the group consisting of molybdenum silicide (MoSi), boron carbide (B4C) and silicon nitride (SiN) on the multilayer reflective stack, a capping layer on the smoothing layer, and an absorber layer on the capping layer.
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公开(公告)号：US11762278B2
公开(公告)日：2023-09-19
申请号：US17349177
申请日：2021-06-16
Applicant: Applied Materials, Inc.
Inventor： Vibhu Jindal , Herng Yau Yoong , Wen Xiao
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of reducing roughness are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate comprising a plurality of pairs of alternating layers comprising a first layer and a second layer, the first layer including a first element selected from the group consisting of Si, B, Al, Mg, Zr, Ba, Nb, Ti, Gd, Y, and Ca; and the second layer including a second element selected from the group consisting of Ru, Mo, Ta, Sb, Tc, Nb, Ir, Pt, and Pd. Some EUV mask blanks described herein include interface layer between the first layer and the second layer, the interface layer including an interface element selected from the group consisting of Si, B, C, Al, Mo, and Ru.
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