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    Extreme ultraviolet mask blank hard mask materials
    4.
    发明授权
    Extreme ultraviolet mask blank hard mask materials 有权

    公开(公告)号：US11537040B2

    公开(公告)日：2022-12-27

    申请号：US17157093

    申请日：2021-01-25

    Applicant: Applied Materials, Inc.

    Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

    IPC: G03F1/24

    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

    MULTILAYER EXTREME ULTRAVIOLET REFLECTORS
    5.
    发明申请
    MULTILAYER EXTREME ULTRAVIOLET REFLECTORS 有权

    公开(公告)号：US20220404692A1

    公开(公告)日：2022-12-22

    申请号：US17349177

    申请日：2021-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Vibhu Jindal ,  Herng Yau Yoong ,  Wen Xiao

    IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

    Abstract: Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of reducing roughness are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate comprising a plurality of pairs of alternating layers comprising a first layer and a second layer, the first layer including a first element selected from the group consisting of Si, B, Al, Mg, Zr, Ba, Nb, Ti, Gd, Y, and Ca; and the second layer including a second element selected from the group consisting of Ru, Mo, Ta, Sb, Tc, Nb, Ir, Pt, and Pd. Some EUV mask blanks described herein include interface layer between the first layer and the second layer, the interface layer including an interface element selected from the group consisting of Si, B, C, Al, Mo, and Ru.

    Physical vapor deposition chamber cleaning processes
    6.
    发明授权
    Physical vapor deposition chamber cleaning processes 有权

    公开(公告)号：US11365475B2

    公开(公告)日：2022-06-21

    申请号：US16943292

    申请日：2020-07-30

    Applicant: Applied Materials, Inc.

    Inventor： Vibhu Jindal ,  Shiyu Liu ,  Sanjay Bhat ,  Shuwei Liu ,  Wen Xiao

    IPC: H01J37/32 ,  C23C14/56

    Abstract: Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50° C. and subsequently cooling down to room, placing the PVD chamber component in a process chamber, reducing the pressure in the process chamber below atmospheric pressure and purging the process chamber with a gas, surface conditioning the surface of the PVD chamber component, and drying the surface of the PVD chamber component by directing a gas on the surface of the PVD chamber component.

    Extreme Ultraviolet Mask Blank Hard Mask Materials
    9.
    发明申请
    Extreme Ultraviolet Mask Blank Hard Mask Materials 有权

    公开(公告)号：US20210232041A1

    公开(公告)日：2021-07-29

    申请号：US17157093

    申请日：2021-01-25

    Applicant: Applied Materials, Inc.

    Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

    IPC: G03F1/24 ,  G03F1/54 ,  C22C27/06 ,  C22C27/02

    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

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