公开(公告)号：US11815809B2

公开(公告)日：2023-11-14

申请号：US17209707

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Azeddine Zerrade ,  Vibhu Jindal

IPC: G03F1/58 ,  G03F1/24

CPC classification number: G03F1/58 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.

公开(公告)号：US20220236634A1

公开(公告)日：2022-07-28

申请号：US17160844

申请日：2021-01-28

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).

公开(公告)号：US11675263B2

公开(公告)日：2023-06-13

申请号：US17370406

申请日：2021-07-08

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.

公开(公告)号：US11609490B2

公开(公告)日：2023-03-21

申请号：US17063783

申请日：2020-10-06

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.

公开(公告)号：US20220221783A1

公开(公告)日：2022-07-14

申请号：US17145592

申请日：2021-01-11

Applicant: Applied Materials, Inc.

Inventor： Shiyu Liu ,  Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54 ,  C22C45/10 ,  C22C45/00 ,  C23C14/02 ,  C23C14/14 ,  C23C14/34

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).

公开(公告)号：US20220107556A1

公开(公告)日：2022-04-07

申请号：US17063783

申请日：2020-10-06

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.

公开(公告)号：US11860533B2

公开(公告)日：2024-01-02

申请号：US17209707

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Azeddine Zerrade ,  Vibhu Jindal

IPC: G03F1/58 ,  G03F1/24

CPC classification number: G03F1/58 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.

公开(公告)号：US20220011663A1

公开(公告)日：2022-01-13

申请号：US17370406

申请日：2021-07-08

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.

公开(公告)号：US20210232042A1

公开(公告)日：2021-07-29

申请号：US17157096

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal ,  Azeddine Zerrade ,  Ramya Ramalingam

IPC: G03F1/24 ,  C22C12/00 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.

公开(公告)号：US20210124252A1

公开(公告)日：2021-04-29

申请号：US17077176

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Sanjay Bhat ,  Shiyu Liu ,  Binni Varghese ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/22 ,  C23C14/34 ,  C23C14/06 ,  H01J37/34

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.