Ultrasound transducer devices and methods for fabricating ultrasound transducer devices

    公开(公告)号:US11590532B2

    公开(公告)日:2023-02-28

    申请号:US16296476

    申请日:2019-03-08

    Abstract: Aspects of the technology described herein relate to ultrasound transducer devices including capacitive micromachined ultrasonic transducers (CMUTs) and methods for forming CMUTs in ultrasound transducer devices. Some embodiments include forming a cavity of a CMUT by forming a first layer of insulating material on a first substrate, forming a second layer of insulating material on the first layer of insulating material, and then etching a cavity in the second insulating material. A second substrate may be bonded to the first substrate to seal the cavity. The first layer of insulating material may include, for example, aluminum oxide. The first substrate may include integrated circuitry. Some embodiments include forming through-silicon vias (TSVs) in the first substrate prior to forming the first and second insulating layers (TSV-Middle process) or subsequent to bonding the first and second substrates (TSV-Last process).

    PRESSURE PORT FOR ULTRASONIC TRANSDUCER ON CMOS SENSOR

    公开(公告)号:US20250090138A1

    公开(公告)日:2025-03-20

    申请号:US18793062

    申请日:2024-08-02

    Abstract: Micromachined ultrasonic transducers having pressure ports are described. The micromachined ultrasonic transducers may comprise flexible membranes configured to vibrate over a cavity. The cavity may be sealed, in some instances by the membrane itself. A pressure port may provide access to the cavity, and thus control of the cavity pressure. In some embodiments, an ultrasound device including an array of micromachined ultrasonic transducers is provided, with pressure ports for at least some of the ultrasonic transducers. The pressure ports may be used to control pressure across the array.

    Adaptive cavity thickness control for micromachined ultrasonic transducer devices

    公开(公告)号:US11583894B2

    公开(公告)日:2023-02-21

    申请号:US16683750

    申请日:2019-11-14

    Abstract: A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.

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