Abstract:
An OLED driving compensation circuit and a driving method thereof are provided. The circuit comprises an external compensation module and a driving module comprising a driving transistor and a storage capacitor. The driving transistor is respectively connected with a power supply voltage terminal and an OLED via a first electrode and a second electrode thereof, a first terminal of the storage capacitor is connected with a control electrode of the driving transistor, and a second terminal thereof is connected between the driving transistor and the OLED. The external compensation module is connected between the driving transistor and the OLED and provides a reference voltage to the electrode of the driving transistor connected with the second terminal of the storage capacitor, to reset the voltage on the electrode. The power supply voltage terminal as variable voltage source inputs a first voltage equal to the reference voltage when the voltage is reset.
Abstract:
A pixel circuit and a driving method, a display panel and a display device are provided. The pixel circuit includes a data writing circuit, a compensation control circuit, a storage circuit, a light-emitting control circuit, and a drive circuit. The current output by the drive circuit in the pixel circuit of the present disclosure is only related to the data voltage of the data signal terminal and the reference voltage, and is independent of the threshold voltage of the drive circuit and the voltage of the second power terminal.
Abstract:
A pixel circuit and a driving method thereof, and a display panel are provided. The pixel circuit includes a driving circuit, a data writing circuit, a storage circuit, an electrical compensation circuit, an optical compensation circuit. The driving circuit controls a driving current that drives a light emitting element to emit light. The data writing circuit writes a data signal to a control terminal of the driving circuit in response to a scanning signal. The storage circuit is used for storing the data signal. The electrical compensation circuit electrically connects the second terminal of the driving circuit to a first detecting terminal in response to an electrical detection enable signal. The optical compensation circuit applies an electrical signal generated according to the light emitted from the light emitting element to the second detecting terminal in response to an optical detection enable signal.
Abstract:
A thin film transistor, a manufacturing method of the thin film transistor, an array substrate and a manufacturing method of the array substrate are provided. The thin film transistor includes a base substrate, a metal light-shielding layer and a first active layer which are on the base substrate, and a spacer layer between the first active layer and the metal light-shielding layer; the first active layer includes a channel region, and the spacer layer is between the channel region and the metal light-shielding layer.
Abstract:
A pixel circuit and a driving method thereof, and a display panel is provided. The pixel circuit includes a first selection circuit, a first driving circuit, a first capacitor a first sensing circuit, a first organic light emitting element, a second capacitor and a capacitor control circuit. The first selection circuit and the first capacitor are electrically connected, and are configured to control the first driving circuit; the first sensing circuit is electrically connected to the first driving circuit and the first organic light emitting element and is configured to sense the first driving circuit or the first organic light emitting element; and the capacitor control circuit is configured to allow the first capacitor and the second capacitor to be connected in parallel or to be disconnected.
Abstract:
There are provided in the present disclosure a pixel driving circuit, an array substrate and a display apparatus. The pixel driving circuit comprises: a compensation module (11), a control module (12), a driving modeling (13), and a light emitting module (14), wherein: the compensation module (11) is connected to a scan signal (Scan), a data signal (Vdata) and a reference signal (VREF) and further connected to the control module (12) and the drive module (13), and is configured to receive the data signal (Vdata) and the reference signal (VREF) under the control of the scan signal (Scan) and compensate for a threshold voltage of the drive module (13) under the control of the control module (12); the control module (12) is connected to a light emitting control signal (EM) and a power supply signal (ELVDD) and further connected to the drive module (13) and the light emitting module (14), and is configured to receive the power supply signal (ELVDD) under the control of the light emitting control signal (EM) to control the compensation module (11) to compensate for the threshold voltage of the drive module (13); one terminal of the light emitting module (14) is connected to the drive module (13), and the other terminal thereof is grounded (VSS); and; the drive module (13) is configured to drive the light emitting module (14) to emit light under the control of the control module (12). The pixel driving circuit is capable of avoiding non-uniformity of luminance of the display device, and enhancing the display effect of the display device.
Abstract:
The present disclosure provides an array substrate, a method of producing the same and a display apparatus. The array substrate comprises: N rows of scan lines, N being a natural number; M columns of data lines, which are arranged to cross with the N rows of scan lines, M being a natural number; a display array comprising N×M pixel units defined by the N rows of scan lines and the M columns of data lines; and N columns of leading wires electrically connected to the N rows of scan lines respectively and led out in parallel to the M columns of data lines. It may narrow the frame of the display apparatus.
Abstract:
The present invention provides an array substrate and a manufacturing method thereof. The array substrate of the present invention comprises multiple pixel units arranged in an array, each pixel unit comprising a substrate, an active layer, a source layer and a drain layer arranged in the same layer, and a gate layer; wherein each pixel unit further comprises a power wire layer connected to the source layer via a via hole. Since the power wire layer of the present invention is separately provided as a layer, the area of the projection of the power wire layer on the substrate may be larger, that is, the conductive cross-sectional area of the power wire layer may be larger, and thus the resistance of the power wire layer is decreased. Therefore, difference among currents of different pixel units is reduced, and thus the mura phenomenon generated in displaying is alleviated.
Abstract:
An array substrate includes a display area and a driving area; thin film transistors in the display area and the driving area are provided with insulation layers between gate electrodes and active layers, and the thickness of the insulation layer of the thin film transistor in the driving area is larger than the thickness of the insulation layer of the thin film transistor in the display area. The present invention has the beneficial effects that when electrostatic discharge occurs between the gate electrode and the source/drain electrodes of the driving area, the breakdown of the insulation layer can be prevented, thereby resulting in no short circuit of the gate electrode and the source/drain electrodes; meanwhile, adverse effects such as a reduced migration rate and threshold voltage drift of the thin film transistor in the display area will not be caused.
Abstract:
The present disclosure provides an optoelectronic sensor and a manufacturing method thereof, and an optoelectronic device and a manufacturing method thereof. The optoelectronic sensor includes a first electrode, a first semiconductor layer, a second semiconductor layer and a second electrode arranged in a stack, wherein each of the first semiconductor layer and the second semiconductor layer is a metal oxide semiconductor layer, the first electrode is a transparent electrode and has a work function greater than that of the first semiconductor layer; and the first semiconductor layer has a conductivity smaller than that of the second semiconductor layer, and has a work function greater than that of the second semiconductor layer.