-
公开(公告)号：US20200081579A1
公开(公告)日：2020-03-12
申请号：US15750724
申请日：2017-06-29
Inventor： Jing WANG , Tsung Chieh KUO , Ming ZHANG , Min HE , Xiaodong XIE , Guiyu ZHANG , Qitao ZHENG , Xiaojuan HU , Xujie ZHANG , Dong LI
IPC: G06F3/044
Abstract: A touch structure, a manufacturing method thereof and a touch device are provided, the touch structure includes a first touch electrode and a second touch electrode which are intersected with each other and insulated from each other, the second touch electrode includes a plurality of electrode patterns spaced apart from each other and a plurality of connection patterns spaced apart from each other, each connection pattern connects together the electrode patterns which are adjacent to the connection pattern, and each connection pattern includes a grid pattern.
-
12.发明申请公开(公告)号：US20190273214A1
公开(公告)日：2019-09-05
申请号：US16144308
申请日：2018-09-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dong LI
Abstract: A quantum dot light emitting diode (QLED) and a manufacture method thereof, a display panel are provided. The QLED includes a hole transport layer and a quantum dot light emitting layer, the hole transport layer includes a porous structure layer having pores, the quantum dot light emitting layer is disposed on the hole transport layer; the quantum dot light emitting layer contacts the porous structure layer, and a material of the quantum dot light emitting layer is disposed in at least a part of the pores.
-
公开(公告)号：US20190027587A1
公开(公告)日：2019-01-24
申请号：US15989773
申请日：2018-05-25
Applicant: BOE Technology Group Co., Ltd.
Inventor： Xiaolong LI , Zunqing SONG , Xiaowei XU , Dong LI
IPC: H01L29/66 , H01L21/265 , H01L21/324 , H01L21/768
Abstract: The present disclosure provides a method for manufacturing a thin film transistor comprising, forming a pattern of an active layer on a substrate through a patterning process; performing ion doping to a channel region of the active layer; forming a gate insulating layer; forming a pattern of a gate through the patterning process; performing ion doping to a source contact region and a drain contact region of the active layer; forming an interlayer insulating layer; and performing laser annealing to the active layer, so as to make the active layer crystallize and the ions doped in the channel region, the source contact region and the drain contact region of the active layer activate simultaneously. In this method, the crystallization of the active layer and the activation of the ions doped in the active layer are implemented in the same process, which reduces the process cost and improves the efficiency.
-
14.发明申请公开(公告)号：US20170200745A1
公开(公告)日：2017-07-13
申请号：US15393030
申请日：2016-12-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jian MIN , Xiaolong LI , Zhengyin XU , Tao GAO , Dong LI , Shuai ZHANG
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1222 , H01L27/127 , H01L27/1288 , H01L29/78618 , H01L29/78675 , H01L29/78696
Abstract: A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.
-
15.发明申请LOW TEMPERATURE POLY-SILICON TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE 审中-公开低温聚硅晶体管阵列基板及其制造方法及显示装置公开(公告)号：US20160300957A1
公开(公告)日：2016-10-13
申请号：US15084802
申请日：2016-03-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaoyong LU , Zheng LIU , Xiaolong LI , Dong LI , Huijuan ZHANG , Liang SUN
IPC: H01L29/786 , H01L29/66 , H01L21/02 , H01L27/12
CPC classification number: H01L29/78675 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L2029/7863
Abstract: The embodiments of the present invention disclose a low temperature (LTPS) transistor array substrate and a method of fabricating the same, and a display device. The LTPS transistor array substrate comprises a substrate; a poly-silicon semiconductor active region provided on the substrate; agate insulated from the poly-silicon semiconductor active region; and a dielectric spacer region provided on a side wall of the gate, wherein a portion of the poly-silicon semiconductor active region corresponding to the dielectric spacer region comprises a buffer region, and the dielectric spacer region surrounds the side wall of the gate and covers the buffer region.
Abstract translation: 本发明的实施例公开了低温（LTPS）晶体管阵列基板及其制造方法以及显示装置。 LTPS晶体管阵列基板包括基板; 设置在所述基板上的多晶硅半导体有源区; 与多晶硅半导体有源区绝缘的玛瑙; 以及设置在所述栅极的侧壁上的电介质间隔区，其中与所述电介质间隔区相对应的所述多晶硅半导体有源区的一部分包括缓冲区，并且所述电介质间隔区围绕所述栅极的侧壁 缓冲区。
-
Patent Agency Ranking
16.发明申请公开(公告)号：US20240389374A1
公开(公告)日：2024-11-21
申请号：US18578670
申请日：2021-08-26
Inventor： Dong LI
IPC: H10K50/115 , B82Y20/00 , B82Y40/00 , C09D5/22 , H10K71/12 , H10K85/10 , H10K85/60 , H10K102/00
Abstract: Disclosed are a quantum dot light emitting device and a manufacturing method therefor, a display panel and a display apparatus. The quantum dot light emitting device includes: a substrate; a first electrode located on one side of the substrate; a first transport layer located on the side of the first electrode facing away from the substrate, wherein the surface of the side of the first transport layer facing away from the first electrode has a bump shape; a polymer quantum dot layer which is located on the side of the first transport layer facing away from the first electrode and includes a polymer material and a quantum dot material; and a second electrode located on the side of the polymer quantum dot layer facing away from the first transport layer.
-
17.发明公开公开(公告)号：US20240164187A1
公开(公告)日：2024-05-16
申请号：US17756178
申请日：2021-03-11
Inventor： Dong LI
IPC: H10K59/80 , H10K50/115 , H10K50/15 , H10K50/16 , H10K59/35 , H10K71/10 , H10K101/40 , H10K102/00
CPC classification number: H10K59/876 , H10K50/156 , H10K50/16 , H10K71/10 , H10K50/115 , H10K59/35 , H10K2101/40 , H10K2102/351
Abstract: Embodiments of the present disclosure disclose a green quantum dot light-emitting device, a method for manufacturing the same, and a display apparatus, including: a first cathode and a first anode opposite to each other, a green quantum dot light-emitting layer between the first cathode and the first anode, a first electron transport layer between the first cathode and the green quantum dot light-emitting layer, and a first hole transport layer between the green quantum dot light-emitting layer and the first anode; wherein a material of the first electron transport layer includes an oxide containing Zn, a thickness of the first electron transport layer is in the range of 10 nm to 40 nm, and a thickness of the first hole transport layer is in the range of 26 nm to 39 nm.
-
公开(公告)号：US20220344604A1
公开(公告)日：2022-10-27
申请号：US17764425
申请日：2021-05-12
Inventor： Dong LI
Abstract: An electroluminescent device, a display substrate, and a display apparatus. The electroluminescent device comprises: an electron transport layer (1) and a quantum dot light emitting layer (3) that are arranged in a stack mode; and an ionic complex layer (2) located between the electron transport layer (1) and the quantum dot light emitting layer (3), wherein a built-in electric field is formed in the ionic complex layer (2).
-
19.发明申请公开(公告)号：US20220310953A1
公开(公告)日：2022-09-29
申请号：US17517252
申请日：2021-11-02
Inventor： Dong LI
Abstract: The present disclosure discloses a quantum dot material, a quantum dot light-emitting device, a display device, and a manufacturing method to solve the problems in the prior art that carrier transport is hindered, the electrical performance of the device is reduced, and the luminous efficiency is reduced after a quantum dot film layer is patterned. The quantum dot material includes: a quantum dot body, linkers, and first ligands; wherein one ends of the linkers are connected with the quantum dot body, and the other ends of the linkers are connected with the first ligands; and each first ligand includes one or a combination of:
-
公开(公告)号：US20220197434A1
公开(公告)日：2022-06-23
申请号：US17359508
申请日：2021-06-26
Abstract: Provided are a touch substrate, a preparation method thereof and a touch device. The touch substrate includes a substrate, and a first conductive layer, a first insulating layer and a second conductive layer sequentially stacked on the substrate. The first conductive layer includes a first capacitive touch electrode, a first wiring and a second wiring. The first wiring is electrically connected to the first capacitive touch electrode, and the second wiring is insulated from the first capacitive touch electrode. The first insulating layer includes at least one first via. The second conductive layer includes a second capacitive touch electrode, which is electrically connected to the second wiring through the first via. The second conductive layer further includes an additional functional channel, which is insulated from the second capacitive touch electrode.
-
-
-
-
-
-
-
-
-
Search Results
72
records
(took 0.021 seconds)
