Abstract:
Disclosed are a display substrate, a display panel and a display device. The display substrate includes: a base substrate, multiple gate-line groups, multiple data lines, the multiple data line include: first type of data lines and second type of data lines alternately arranged along the first direction; multiple transistors, transistors in the same sub-transistor group are connected with the same gate line, transistors in adjacent sub-transistor groups are connected with different gate lines, and transistors of the same sub-transistor group are connected with different data lines; multiple pins, the multiple pins include: first type of pins and second type of pins alternately arranged along the first direction; two adjacent first type of data lines are connected with a same first type of pin, and adjacent second type of data lines are connected with a same second type of pin.
Abstract:
The present disclosure provides an OLED display device and its manufacturing method. The OLED display device includes an anode layer, a cathode layer, and a pixel-defined layer and a light-emitting layer both arranged between the anode layer and the cathode layer. The pixel-defined layer is provided with an opening, and the light-emitting layer is arranged in the opening. An insulating layer having a refractive index greater than that of the pixel-defined layer is arranged between the light-emitting layer and the pixel-defined layer.
Abstract:
An OLED display substrate, a manufacturing method thereof and a display device are provided. The OLED display substrate includes a TFT array layer, a first electrode, a pixel definition layer, an OEL layer and a second electrode arranged on a base substrate. The pixel definition layer is configured to define a plurality of subpixel regions. A reflection structure surrounds each subpixel region and is capable of reflecting light beams from the OEL layer and beyond an escaping cone in such a manner as to enable at least parts of the light beams to enter the escaping cone.
Abstract:
The present disclosure provides a method for manufacturing a thin film transistor comprising, forming a pattern of an active layer on a substrate through a patterning process; performing ion doping to a channel region of the active layer; forming a gate insulating layer; forming a pattern of a gate through the patterning process; performing ion doping to a source contact region and a drain contact region of the active layer; forming an interlayer insulating layer; and performing laser annealing to the active layer, so as to make the active layer crystallize and the ions doped in the channel region, the source contact region and the drain contact region of the active layer activate simultaneously. In this method, the crystallization of the active layer and the activation of the ions doped in the active layer are implemented in the same process, which reduces the process cost and improves the efficiency.
Abstract:
A substrate heating device and substrate heating method is disclosed. The device comprises: a heating layer for transferring heat; a transfer pipe for transferring a gas to a diffusion layer; the diffusion layer for enabling the gas to be uniformly distributed between a conducting layer and the heating layer; and the conducting layer for conducting the gas in the diffusion layer to below a substrate to be heated. The device can uniformly and fully heat the substrate to be heated, thus enabling the to-be-heated substrate to have a more uniform surface temperature, and achieving a better effect in an etching, deposition and/or sputtering process of the substrate to be heated.
Abstract:
Embodiments of the present disclosure provide a thin-film transistor (TFT), an array substrate and a manufacturing method thereof, and a display device. The method for preparing a TFT according to an embodiment of the present disclosure may comprise: providing a base substrate; and forming an active layer and an insulation layer on the base substrate. The active layer and the insulation layer may be arranged sequentially and in contact with each other, and the insulation layer may include at least one first insulation layer one of which is in contact with the active layer. The step of forming the first insulation layer may comprise: forming a first insulation film; and conducting a repairing process on the first insulation film by using a repairing source which provides filling atoms, so as to form bonds between at least part of dangling bonds in the first insulation film and the filling atoms.
Abstract:
Provided are an OLED display panel and its manufacturing method, as well as a display device. The OLED display panel includes: a base substrate; and an organic light emitting unit, a pixel defining layer and a packaging substrate, arranged on the base substrate. The pixel defining layer is provided with a via hole at at least one side of the organic light emitting unit. The via hole is filled with a total reflection-eliminating layer through which incident light is processed to obtain emergent light capable of arriving at an interface between the packaging substrate and an atmosphere at an incident angle smaller than a total reflection angle at the interface between the packaging substrate and the atmosphere.
Abstract:
An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base substrate, and a thin film transistor and a storing capacitor provided on the base substrate, the thin film transistor comprises a gate, a source, a drain and a gate insulation layer provided between the source and drain and the gate, the storing capacitor comprises a first plate, a second plate and a dielectric layer provided between the first plate and the second plate, wherein, both of the first plate and the second plate are formed of metal material, and the dielectric layer is formed of the same material as the gate insulation layer. In the array substrate of the present invention, the charging speed of the storing capacitor can be improved and the display quality of the display apparatus comprising the array substrate is further improved.
Abstract:
A flexible display panel, a manufacturing method thereof and a display device are provided. The flexible display panel includes: a flexible substrate and an inorganic insulating layer(s) and an organic insulating layer on the flexible substrate. The inorganic insulating layer(s) is provided with a recess in a region to be bent of the flexible display panel. The organic insulating layer at least covers a surface of the recess, and the flexibility of the organic insulating layer is greater than that of the inorganic insulating layer(s).
Abstract:
The present disclosure provides a Low Temperature Poly Silicon (LTPS) backboard, a method for manufacturing the LTPS, and a light-emitting device. The LTPS backboard includes: a base substrate, and a thin film transistor (TFT) and a light blocking layer that are arranged above the base substrate, wherein the light blocking layer is arranged above the TFT, and the light blocking layer is configured for preventing an irradiation light from irradiating onto the TFT.