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公开(公告)号：US20210157207A1
公开(公告)日：2021-05-27
申请号：US16963531
申请日：2019-12-17
Inventor： Pengyue Zhang , Zhulin Liu , Xiaolin Wang , Jungho Park , Zhuo Xu
IPC: G02F1/1362 , G02F1/1343 , H01L27/12
Abstract: Embodiments of the present disclosure provide an array substrate, a display panel, and a display apparatus. The array substrate includes: a display region for displaying an image; a non-display region; a shift register provided in the non-display region; a gate line provided in the display region and extending along a first direction; and a gate signal output line, provided in the non-display region and having a first end and a second end. The first end of the gate signal output line is connected to the shift register, and the second end of the gate signal output line is connected to the gate line at a side of the gate line in a second direction perpendicular to the first direction.
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12.发明申请公开(公告)号：US20180331126A1
公开(公告)日：2018-11-15
申请号：US15578534
申请日：2016-11-02
Inventor： Zhuo Xu , Yajie Bai , Xiaolin Wang , Rui Wang , Fei Shang , Haijun Qiu
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1225 , H01L21/707 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L27/3248 , H01L27/326 , H01L27/3262 , H01L27/3276 , H01L29/78633 , H01L29/7869
Abstract: The present a plication discloses an array substrate, a display panel a splay apparatus having the same, and a fabricating method thereof The array substrate includes a base substrate; a first electrode and a second electrode, the first electrode and the second electrode being two different electrodes selected from a pixel electrode and a common electrode; and a thin film transistor including an active layer, an etch stop layer on a side of the active layer distal to the base substrate, a first node, and a second node.
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公开(公告)号：US09658497B2
公开(公告)日：2017-05-23
申请号：US14422766
申请日：2014-06-03
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolin Wang , Haiyan Wang , Yoonsung Um
IPC: G02F1/1343 , G02F1/1362 , G02F1/1335
CPC classification number: G02F1/134309 , G02F1/133528 , G02F1/136209 , G02F1/136213
Abstract: The present invention discloses a liquid crystal display panel and a display device. A capacitance compensation portion is arranged using a shading region, and the capacitance compensation portion is arranged opposite to a portion of a common electrode located within the shading region. Compared to the case where a common electrodes and a pixel electrode are overlapped only in a light transmitting region, the present invention enlarges the overlap area of the pixel electrode and the common electrode in the shading region, compensates the storage capacitance between the pixel electrode and the common electrode, and reduces the voltage difference before and after jump of the voltage of the pixel electrode, and improves the flicker of a liquid crystal display panel. Moreover, as the capacitance compensation portions additionally provided in the pixel electrodes are located within the shading region, the aperture rate of pixel regions will not be influenced.
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Patent Agency Ranking
公开(公告)号：US09740061B2
公开(公告)日：2017-08-22
申请号：US14402966
申请日：2013-12-05
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolin Wang
IPC: G02F1/1337 , H01L27/12 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G02F1/1333
CPC classification number: G02F1/134363 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F2001/134345 , G02F2001/134372 , H01L27/124 , H01L27/1248
Abstract: An array substrate includes: a base substrate; a sub-pixel region on the base substrate in which a first electrode and a second electrode are provided, one of the first electrode and the second electrode being a common electrode, the other being a pixel electrode; an insulating layer between the first electrode and the second electrode; the sub-pixel region comprises right opposite overlapping regions between the first electrode and the second electrode that are disposed in different layers and non-right opposite overlapping regions; and hollowed-out regions are provided at least in regions of the insulating layer that correspond to the non-right opposite overlapping regions. The array substrate is used to provide a liquid crystal panel with low power dissipation.
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公开(公告)号：US11467456B2
公开(公告)日：2022-10-11
申请号：US16963531
申请日：2019-12-17
Inventor： Pengyue Zhang , Zhulin Liu , Xiaolin Wang , Jungho Park , Zhuo Xu
IPC: G02F1/1362 , G02F1/1343 , H01L27/12 , G09G3/36
Abstract: Embodiments of the present disclosure provide an array substrate, a display panel, and a display apparatus. The array substrate includes: a display region for displaying an image; a non-display region; a shift register provided in the non-display region; a gate line provided in the display region and extending along a first direction; and a gate signal output line, provided in the non-display region and having a first end and a second end. The first end of the gate signal output line is connected to the shift register, and the second end of the gate signal output line is connected to the gate line at a side of the gate line in a second direction perpendicular to the first direction.
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16.发明授权公开(公告)号：US10101615B2
公开(公告)日：2018-10-16
申请号：US14402946
申请日：2013-11-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolin Wang
IPC: H01L29/04 , G02F1/1343 , G02F1/1333 , G02F1/1362 , H01L27/12 , H01L29/786
Abstract: An array substrate includes: a base substrate; a sub-pixel region on the base substrate in which a first electrode and a second electrode are disposed; and a first insulating layer between the first electrode and the second electrode for insulating the first electrode and the second electrode. One of the first electrode and the second electrode is a common electrode and the other is a pixel electrode. A surface of at least one of the first electrode and the second electrode is a curved surface. The array substrate is intended to provide a liquid crystal panel and a display device with high light transmittance in sub-pixel regions. A manufacturing method of an array substrate is further disclosed.
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公开(公告)号：US09793300B2
公开(公告)日：2017-10-17
申请号：US14900960
申请日：2015-06-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolin Wang , Xing Yao , Yoonsung Um , Seungwoo Han , Yunsik Im
IPC: H01L27/14 , H01L27/12 , H01L29/786 , H01L27/02 , H01L29/417 , H01L29/423
CPC classification number: H01L27/124 , H01L27/0207 , H01L27/1255 , H01L29/41733 , H01L29/42384 , H01L29/786 , H01L29/78606
Abstract: The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.
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公开(公告)号：US20160372487A1
公开(公告)日：2016-12-22
申请号：US14900960
申请日：2015-06-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolin Wang , Xing Yao , Yoonsung Um , Seungwoo Han , Yunsik Im
IPC: H01L27/12 , H01L27/02 , H01L29/423 , H01L29/786 , H01L29/417
CPC classification number: H01L27/124 , H01L27/0207 , H01L27/1255 , H01L29/41733 , H01L29/42384 , H01L29/786 , H01L29/78606
Abstract: The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.
Abstract translation: 本公开提供了TFT和电路结构，以改善TFT的阈值电压漂移的特性。 TFT包括栅电极，半导体层，蚀刻停止层，以及连接到半导体层的源电极和漏电极。 TFT还包括布置在蚀刻停止层上方的停止结构。 停止结构与源电极和漏电极电隔离，并且止动结构在蚀刻停止层上的正交投影至少部分地与半导体层的正交投影重叠在蚀刻停止层上。 本公开改善了TFT的阈值电压漂移的特性。
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