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11.发明申请公开(公告)号：US20200056033A1
公开(公告)日：2020-02-20
申请号：US16452773
申请日：2019-06-26
发明人： Wei Li , Jingjing Xia , Bin Zhou , Dongfang Wang , Ce Zhao , Yingbin Hu , Wei Song
IPC分类号： C08L33/12 , C08L33/16 , C08K5/08 , C08K5/32 , C08F220/28 , C08F220/34 , C08K3/22 , H01L27/32 , C08F292/00
摘要： The present disclosure provides a pixel defining layer and a preparation material thereof, and a display substrate and a preparation method thereof, and relates to the field of display technologies. The preparation material of the pixel defining layer comprises the following components in mass percentages: 5%-30% of a lyophobic film-forming polymer, 0.5%-1% of lyophilic magnetic nanoparticles, 0.5%-2% of a photoinitiator, 0.1%-1% of a reactive monomer, 0.1%-1% of an additive and the balance of a solvent.
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公开(公告)号：US20200044093A1
公开(公告)日：2020-02-06
申请号：US16398668
申请日：2019-04-30
发明人： Jun Liu , Bin Zhou , Tongshang Su , Wei Song , Wei Li , Biao Luo , Chaowei Hao
IPC分类号： H01L29/786 , H01L29/49 , H01L29/66 , H01L27/12
摘要： A thin film transistor and a manufacturing method thereof, and an array substrate are provided. The thin film transistor includes an active layer, a source electrode, a drain electrode, a gate electrode, and a light shielding portion. The source electrode and the drain electrode electrically connect to the active layer, respectively, the gate electrode and the light shielding portion are on same one side of the active layer; in a direction from the source electrode to the drain electrode, the gate electrode is between the source electrode and the drain electrode, and the light shielding portion is at at least one of a group consisting of a spacing between the gate electrode and the source electrode and a spacing between the gate electrode and the drain electrode.
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公开(公告)号：US11785811B2
公开(公告)日：2023-10-10
申请号：US17241703
申请日：2021-04-27
发明人： Ning Liu , Jun Liu , Wei Song , Qinghe Wang , Bin Zhou , Liangchen Yan
IPC分类号： H01L29/08 , H10K59/124 , H10K59/126 , H10K59/12
CPC分类号： H10K59/124 , H10K59/126 , H10K59/1201
摘要： An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes: a base substrate, and a thin film transistor, a storage capacitor, and a lapping pattern for connecting the thin film transistor to the storage capacitor arranged on the base substrate; wherein the thin film transistor includes a semiconductor layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a source electrode and a drain electrode arranged sequentially in that order; the interlayer insulation layer includes at least two inorganic insulation layers and at least one organic insulation layer laminated one on another, and both a layer proximate to the base substrate and a layer distal to the base substrate in the interlayer insulation layer are the inorganic insulation layers.
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公开(公告)号：US11737305B2
公开(公告)日：2023-08-22
申请号：US17260018
申请日：2020-05-27
发明人： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Ning Liu , Leilei Cheng , Junlin Peng , Yingbin Hu , Liusong Ni
IPC分类号： H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K101/30 , H10K102/10 , H10K102/00
CPC分类号： H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K2101/30 , H10K2102/103 , H10K2102/3026
摘要： A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
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15.发明授权公开(公告)号：US11616147B2
公开(公告)日：2023-03-28
申请号：US17254851
申请日：2020-04-08
发明人： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Song , Liusong Ni , Xuechao Sun , Chaowei Hao , Liangchen Yan
IPC分类号： H01L29/786 , H01L21/02 , H01L27/12 , H01L29/66 , H01L29/08
摘要： The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.
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公开(公告)号：US20210408183A1
公开(公告)日：2021-12-30
申请号：US17342596
申请日：2021-06-09
发明人： Wei Li , Bin Zhou , Shengping Du , Qinghua Guo , Tao Sun , Wei Song , Liangchen Yan
摘要： A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.
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公开(公告)号：US10892284B2
公开(公告)日：2021-01-12
申请号：US16402191
申请日：2019-05-02
IPC分类号： H01L23/544 , H01L27/12 , H01L21/768 , H01L27/32
摘要： A display substrate, a manufacturing method thereof, and a display device are provided. According to embodiments of the present disclosure, the manufacturing method of a display substrate comprises: fabricating a gate electrode, a gate electrode insulating layer, and a semiconductor active layer sequentially on a base substrate; fabricating a first etching stopping layer and a second etching stopping layer on the base substrate with the semiconductor active layer fabricated thereon, wherein the first etching stopping layer is disposed in a display area of the display substrate, the second etching stopping layer is disposed in a peripheral area of the display substrate, and the second etching stopping layer is a non-transparent layer; and fabricating source/drain electrodes by a patterning process, on the base substrate with the first and second etching stopping layers fabricated thereon, wherein the second etching stopping layer is used as an alignment marker in fabricating the source/drain electrodes.
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18.发明授权公开(公告)号：US10886410B2
公开(公告)日：2021-01-05
申请号：US16393023
申请日：2019-04-24
发明人： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Li , Wei Song , Luke Ding , Jun Liu , Liangchen Yan
IPC分类号： H01L29/786 , H01L27/32 , H01L29/66
摘要： Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.
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19.发明申请公开(公告)号：US20200091199A1
公开(公告)日：2020-03-19
申请号：US16395660
申请日：2019-04-26
发明人： Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC分类号： H01L27/12 , H01L29/786 , H01L29/66 , H01L29/40 , H01L21/3213
摘要： A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
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公开(公告)号：US20200035767A1
公开(公告)日：2020-01-30
申请号：US16436201
申请日：2019-06-10
发明人： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
摘要： The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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