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11.发明申请APPARATUS AND METHOD FOR SUPPORTING, POSITIONING AND ROTATING A SUBSTRATE IN A PROCESSING CHAMBER 有权用于支撑，定位和旋转处理室中的基板的装置和方法公开(公告)号：US20080276864A1
公开(公告)日：2008-11-13
申请号：US11746392
申请日：2007-05-09
IPC分类号： B05C13/02
CPC分类号： H01L21/6838 , H01L21/67115
摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.
摘要翻译： 提供了用于支撑，定位和旋转衬底的装置和方法。 在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。 衬底浮在上层底板上的薄层空气上。 定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。 多个倾斜的孔或气流袋被构造在上基板中，用于使气体流过其中以旋转基板，以确保在加工期间的均匀加热。
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12.发明申请APPARATUS AND METHOD FOR MEASURING RADIATION ENERGY DURING THERMAL PROCESSING 有权用于在热处理过程中测量辐射能量的装置和方法公开(公告)号：US20130280824A1
公开(公告)日：2013-10-24
申请号：US13903387
申请日：2013-05-28
IPC分类号： H01L21/66
CPC分类号： H01L22/10 , H01L21/67115 , H01L21/67248
摘要： Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.
摘要翻译： 本发明的实施例提供了用于在热处理期间减少加热源辐射对温度测量的影响的装置和方法。 在本发明的一个实施例中，将背景辐射能（例如热处理室的能量源）标记在所选择的光谱内，然后通过测量所选光谱内的参考波长的辐射能来确定背景的特性 以及刚好在所选频谱之外的比较波长。
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13.发明申请APPARATUS AND METHOD FOR SUPPORTING, POSITIONING AND ROTATING A SUBSTRATE IN A PROCESSING CHAMBER 有权用于支撑，定位和旋转处理室中的基板的装置和方法公开(公告)号：US20120055405A1
公开(公告)日：2012-03-08
申请号：US13294709
申请日：2011-11-11
IPC分类号： C23C16/458 , B05C13/02
CPC分类号： H01L21/6838 , H01L21/67115
摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.
摘要翻译： 提供了用于支撑，定位和旋转衬底的装置和方法。 在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。 衬底浮在上层底板上的薄层空气上。 定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。 多个倾斜的孔或气流袋被配置在上基板中，用于使气体流过其中以旋转基板以确保在加工期间的均匀加热。
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14.发明申请APPARATUS AND METHOD FOR MEASURING RADIATION ENERGY DURING THERMAL PROCESSING 有权用于在热处理过程中测量辐射能量的装置和方法公开(公告)号：US20100003020A1
公开(公告)日：2010-01-07
申请号：US12483084
申请日：2009-06-11
申请人： Joseph M. Ranish , Blake Koelmel , Aaron Hunter
发明人： Joseph M. Ranish , Blake Koelmel , Aaron Hunter
IPC分类号： A21B2/00
CPC分类号： H01L22/10 , H01L21/67115 , H01L21/67248
摘要： Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.
摘要翻译： 本发明的实施例提供了用于在热处理期间减少加热源辐射对温度测量的影响的装置和方法。 在本发明的一个实施例中，将背景辐射能（例如热处理室的能量源）标记在所选择的光谱内，然后通过测量所选光谱内的参考波长的辐射能来确定背景的特性 以及刚好在所选频谱之外的比较波长。
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15.发明授权Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber 有权用于在处理室中支撑，定位和旋转衬底的装置和方法公开(公告)号：US08490660B2
公开(公告)日：2013-07-23
申请号：US13294709
申请日：2011-11-11
IPC分类号： B65B31/04
CPC分类号： H01L21/6838 , H01L21/67115
摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.
摘要翻译： 提供了用于支撑，定位和旋转衬底的装置和方法。 在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。 衬底浮在上层底板上的薄层空气上。 定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。 多个倾斜的孔或气流袋被配置在上基板中，用于使气体流过其中以旋转基板以确保在加工期间的均匀加热。
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公开(公告)号：US20120309115A1
公开(公告)日：2012-12-06
申请号：US13152157
申请日：2011-06-02
申请人： BLAKE KOELMEL , Joseph M. Ranish
发明人： BLAKE KOELMEL , Joseph M. Ranish
CPC分类号： H01L21/67109 , H01L21/6838
摘要： Embodiments of the present invention provide apparatus and methods for supporting and controlling a substrate during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a chamber body defining an inner volume, a substrate support disposed in the inner volume, and an auxiliary force assembly configured to apply an auxiliary force to the substrate. Another embodiment provides a gas delivery assembly configured to adjust a thermal mass of a fluid flow delivered to position, control and/or rotate a substrate.
摘要翻译： 本发明的实施例提供了用于在热处理期间支撑和控制基板的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括限定内部容积的室主体，设置在内部容积中的基板支撑件以及被配置成向基板施加辅助力的辅助力组件。 另一个实施例提供一种气体输送组件，其构造成调节输送到位置的流体流的热质量，控制和/或旋转基底。
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17.发明申请公开(公告)号：US20120304928A1
公开(公告)日：2012-12-06
申请号：US13152154
申请日：2011-06-02
IPC分类号： C23C16/458 , C23C16/52
CPC分类号： H01L21/68 , H01L21/67115 , H01L21/67259
摘要： Embodiments of the present invention provide apparatus and methods for positioning a substrate in a processing chamber using capacitive sensors. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes first and second capacitive sensors disposed in an inner volume. The first capacitive sensor is positioned to detect a location of an edge of the substrate at a first angular location. The second capacitive sensor is positioned to detect a vertical position of the substrate.
摘要翻译： 本发明的实施例提供了使用电容式传感器将衬底定位在处理室中的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括设置在内部容积中的第一和第二电容传感器。 第一电容传感器被定位成在第一角度位置处检测衬底的边缘的位置。 第二电容传感器被定位成检测基板的垂直位置。
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18.发明授权Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber 有权用于在处理室中支撑，定位和旋转衬底的装置和方法公开(公告)号：US08057602B2
公开(公告)日：2011-11-15
申请号：US12017293
申请日：2008-01-21
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , H01L21/6838 , H01L21/68742 , H01L21/68785 , H01L21/68792
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support, position, and rotate a substrate during processing. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein remove the need for complex, costly and often unreliable components that would be required to accurately position and rotate a substrate during one or more processing steps, such as an rapid thermal processing (RTP) process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, atomic layer deposition (ALD) process, dry etching process, wet clean, and/or laser annealing process.
摘要翻译： 本发明的实施例考虑了一种用于在处理期间支撑，定位和旋转衬底的方法，装置和系统。 本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。 本文描述的装置和方法消除了在一个或多个处理步骤（例如快速热处理（RTP）处理，化学气相沉积）中精确定位和旋转衬底所需的复杂，昂贵且经常不可靠的部件的需要 （CVD）工艺，物理气相沉积（PVD）工艺，原子层沉积（ALD）工艺，干蚀刻工艺，湿法清洁和/或激光退火工艺。
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公开(公告)号：US09905444B2
公开(公告)日：2018-02-27
申请号：US13785539
申请日：2013-03-05
申请人： Joseph M. Ranish
发明人： Joseph M. Ranish
CPC分类号： H01L21/02104 , G02B17/002 , H01L21/67115
摘要： Embodiments described herein generally relate to apparatus for heating substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps is positioned to provide radiant energy through an optically transparent dome to a substrate positioned on the substrate support. A light focusing assembly is positioned within the chamber to influence heating and temperature distribution on the substrate and to facilitate formation of a film on a substrate having uniform properties, such as density. The light focusing assembly can include one or more reflectors, light pipes, or refractive lenses.
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公开(公告)号：US08821643B2
公开(公告)日：2014-09-02
申请号：US13674737
申请日：2012-11-12
申请人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
发明人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
IPC分类号： B08B7/00
CPC分类号： B08B5/00 , B08B7/00 , B08B7/0071 , H01L21/324
摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.
摘要翻译： 一种清洗用于退火掺杂晶圆基板的室的方法。 在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出 从退火室中除去挥发的掺杂剂。
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