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    Fine Grained, Non Banded, Refractory Metal Sputtering Targets with a Uniformly Random Crystallographic Orientation, Method for Making Such Film, and Thin Film Based Devices and Products Made Therefrom
    19.
    发明申请
    Fine Grained, Non Banded, Refractory Metal Sputtering Targets with a Uniformly Random Crystallographic Orientation, Method for Making Such Film, and Thin Film Based Devices and Products Made Therefrom 有权
    具有均匀随机晶体取向的细晶粒，非带状耐火金属溅射靶，制造这种膜的方法以及由此制成的薄膜基器件和产品

    公开(公告)号：US20080271779A1

    公开(公告)日：2008-11-06

    申请号：US11937164

    申请日：2007-11-08

    申请人： Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann

    发明人： Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann

    IPC分类号： C23C14/00 ,  B05D1/12 ,  G11B5/62

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    摘要： The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    摘要翻译： 本发明涉及一种溅射靶，其具有小于44微米的均匀均匀的晶粒结构，不受电子背散射衍射（“EBSD”）测量的优选纹理取向，并且在整个体内不显示晶粒尺寸条带或纹理条带 的目标。 本发明涉及一种具有透镜或扁平晶粒结构的溅射靶，没有通过EBSD测量的优选的织构定向，并且在靶的整个体内不显示晶粒尺寸或纹理条纹，并且其中靶具有结合有层 溅射材料和在背板界面处的至少一个附加层，所述层在背板的CTE和溅射材料层的CTE之间具有热膨胀系数（“CTE”）。 本发明还涉及薄膜及其使用溅射靶和其它应用的应用，例如涂层，太阳能装置，半导体器件等。本发明还涉及一种修复或恢复溅射靶的方法。