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公开(公告)号：US08784729B2
公开(公告)日：2014-07-22
申请号：US11653816
申请日：2007-01-16
申请人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
发明人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
CPC分类号： C23C14/3414 , B22F3/1017 , B22F2003/241 , B22F2003/247 , B22F2998/10 , C22C1/045 , B22F3/04 , B22F3/24
摘要： The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.
摘要翻译： 本发明涉及一种通过压制/烧结方法生产高密度难熔金属产品的方法。 本发明还涉及一种用于制造溅射靶和如此制造的溅射靶的方法。
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公开(公告)号：US20140299466A1
公开(公告)日：2014-10-09
申请号：US14269836
申请日：2014-05-05
申请人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
发明人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F3/1017 , B22F2003/241 , B22F2003/247 , B22F2998/10 , C22C1/045 , B22F3/04 , B22F3/24
摘要： The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.
摘要翻译： 本发明涉及一种通过压制/烧结方法生产高密度难熔金属产品的方法。 本发明还涉及一种用于制造溅射靶和如此制造的溅射靶的方法。
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公开(公告)号：US20080171215A1
公开(公告)日：2008-07-17
申请号：US11653816
申请日：2007-01-16
申请人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
发明人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
CPC分类号： C23C14/3414 , B22F3/1017 , B22F2003/241 , B22F2003/247 , B22F2998/10 , C22C1/045 , B22F3/04 , B22F3/24
摘要： The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.
摘要翻译： 本发明涉及一种通过压制/烧结方法生产高密度难熔金属产品的方法。 本发明还涉及一种用于制造溅射靶和如此制造的溅射靶的方法。
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公开(公告)号：US09926623B2
公开(公告)日：2018-03-27
申请号：US15061566
申请日：2016-03-04
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
IPC分类号： C23C14/34 , B22F3/16 , C22C1/04 , C22C27/04 , C23C14/35 , C23C14/46 , B22F1/00 , B22F5/00 , C21D8/02 , C22F1/18 , C23C14/14 , B22F3/24
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, sputtering targets are formed by introducing molybdenum powder into a sheet bar mold, pressing the powder to form a sheet bar, sintering the sheet bar to form an ingot having a density of at least 90% of a theoretical density, preheating the ingot, rolling the ingot to form a plate, and heat treating the plate.
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公开(公告)号：US20130224059A1
公开(公告)日：2013-08-29
申请号：US13849918
申请日：2013-03-25
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet.
摘要翻译： 在各种实施例中，平面溅射靶通过至少通过在模具中压制钼粉末并烧结压粉，加工坯料以形成加工的坯料，热处理加工的坯料，加工加工的坯料以形成 最终坯料，并对最终坯料进行热处理。
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公开(公告)号：US20150136584A1
公开(公告)日：2015-05-21
申请号：US14608995
申请日：2015-01-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets comprising molybdenum are provided and sputtered to produce thin films comprising molybdenum. The sputtering targets may be formed by forming a tubular billet having an inner diameter IDI and an outer diameter ODI, the formation comprising pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet having an outer diameter ODf smaller than ODI, and heat treating the worked billet. The sputtering targets may have a substantially uniform texture of (a) a 110 orientation parallel to a longitudinal direction and (b) a 111 orientation parallel to a radial direction.
摘要翻译： 在各种实施例中，提供包含钼的管状溅射靶并溅射以产生包含钼的薄膜。 溅射靶可以通过形成具有内径IDI和外径ODI的管状坯料形成，所述管状坯料包括在模具中挤压钼粉末并烧结压制的钼粉末，对管坯进行加工以形成具有外径 直径ODf小于ODI，并对加工的坯料进行热处理。 溅射靶可以具有基本上均匀的织构（a）平行于纵向方向的110取向，和（b）平行于径向的111取向。
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公开(公告)号：US09017600B2
公开(公告)日：2015-04-28
申请号：US13849918
申请日：2013-03-25
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet.
摘要翻译： 在各种实施例中，平面溅射靶通过至少通过在模具中压制钼粉末并烧结压粉，加工坯料以形成加工的坯料，热处理加工的坯料，加工加工的坯料以形成 最终坯料，并对最终坯料进行热处理。
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公开(公告)号：US07837929B2
公开(公告)日：2010-11-23
申请号：US11255018
申请日：2005-10-20
申请人： Mark Gaydos , Prabhat Kumar , Steven A. Miller , Norman C. Mills , Gary Rozak , Rong-Chein Richard Wu
发明人： Mark Gaydos , Prabhat Kumar , Steven A. Miller , Norman C. Mills , Gary Rozak , Rong-Chein Richard Wu
IPC分类号： B22F3/02
CPC分类号： C23C14/3414 , B22F3/15 , B22F2998/00 , B22F2998/10 , C22C1/045 , B22F5/006 , B22F1/0003 , B22F3/02 , B22F3/1208 , B22F3/04
摘要： Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.
摘要翻译： 提供钼钛溅射靶。 在一个方面，目标基本上不含（Ti，Mo）合金相。 另一方面，靶基本上由单相（Ti，Mo）合金构成。 在这两个方面，溅射中的颗粒发射减少。 还提供了制备目标的方法，将靶标结合在一起以产生大面积溅射靶的方法，以及由靶产生的膜。
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公开(公告)号：US20160186311A1
公开(公告)日：2016-06-30
申请号：US15061566
申请日：2016-03-04
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
IPC分类号： C23C14/34 , B22F1/00 , B22F3/16 , C21D8/02 , B22F5/00 , C22F1/18 , C22C27/04 , C23C14/14 , B22F3/24
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, sputtering targets are formed by introducing molybdenum powder into a sheet bar mold, pressing the powder to form a sheet bar, sintering the sheet bar to form an ingot having a density of at least 90% of a theoretical density, preheating the ingot, rolling the ingot to form a plate, and heat treating the plate.
摘要翻译： 在各种实施例中，溅射靶是通过将钼粉末引入片材模具中形成的，压制粉末以形成片材棒，烧结片材棒以形成密度至少为理论密度的90％的锭料，预热 锭，轧制锭以形成板，并对板进行热处理。
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公开(公告)号：US09309591B2
公开(公告)日：2016-04-12
申请号：US14608995
申请日：2015-01-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets comprising molybdenum are provided and sputtered to produce thin films comprising molybdenum. The sputtering targets may be formed by forming a tubular billet having an inner diameter IDI and an outer diameter ODI, the formation comprising pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet having an outer diameter ODf smaller than ODI, and heat treating the worked billet. The sputtering targets may have a substantially uniform texture of (a) a 110 orientation parallel to a longitudinal direction and (b) a 111 orientation parallel to a radial direction.
摘要翻译： 在各种实施例中，提供包含钼的管状溅射靶并溅射以产生包含钼的薄膜。 溅射靶可以通过形成具有内径IDI和外径ODI的管状坯料形成，所述管状坯料包括在模具中挤压钼粉末并烧结压制的钼粉末，对管坯进行加工以形成具有外径 直径ODf小于ODI，并对加工的坯料进行热处理。 溅射靶可以具有基本上均匀的织构（a）平行于纵向方向的110取向，和（b）平行于径向的111取向。
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