-
公开(公告)号：US20110303535A1
公开(公告)日：2011-12-15
申请号：US13173412
申请日：2011-06-30
申请人： Steven A. Miller , Prabhat Kumar , Mark Confroy , Richard McCorry , Gary Rozak , Peter Jepson
发明人： Steven A. Miller , Prabhat Kumar , Mark Confroy , Richard McCorry , Gary Rozak , Peter Jepson
CPC分类号： C23C24/04 , C23C4/02 , C23C14/3407 , C23C14/3414
摘要： In various embodiments, sputtering targets incorporate an intermediate plate having a coefficient of thermal expansion (CTE) between a CTE of the backing plate and a CTE of the target material.
摘要翻译： 在各种实施方案中，溅射靶包括在背板的CTE和目标材料的CTE之间具有热膨胀系数（CTE）的中间板。
-
公开(公告)号：US09926623B2
公开(公告)日：2018-03-27
申请号：US15061566
申请日：2016-03-04
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
IPC分类号： C23C14/34 , B22F3/16 , C22C1/04 , C22C27/04 , C23C14/35 , C23C14/46 , B22F1/00 , B22F5/00 , C21D8/02 , C22F1/18 , C23C14/14 , B22F3/24
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, sputtering targets are formed by introducing molybdenum powder into a sheet bar mold, pressing the powder to form a sheet bar, sintering the sheet bar to form an ingot having a density of at least 90% of a theoretical density, preheating the ingot, rolling the ingot to form a plate, and heat treating the plate.
-
公开(公告)号：US08784729B2
公开(公告)日：2014-07-22
申请号：US11653816
申请日：2007-01-16
申请人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
发明人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
CPC分类号： C23C14/3414 , B22F3/1017 , B22F2003/241 , B22F2003/247 , B22F2998/10 , C22C1/045 , B22F3/04 , B22F3/24
摘要： The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.
摘要翻译： 本发明涉及一种通过压制/烧结方法生产高密度难熔金属产品的方法。 本发明还涉及一种用于制造溅射靶和如此制造的溅射靶的方法。
-
公开(公告)号：US20130224059A1
公开(公告)日：2013-08-29
申请号：US13849918
申请日：2013-03-25
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet.
摘要翻译： 在各种实施例中，平面溅射靶通过至少通过在模具中压制钼粉末并烧结压粉，加工坯料以形成加工的坯料，热处理加工的坯料，加工加工的坯料以形成 最终坯料，并对最终坯料进行热处理。
-
5.发明授权公开(公告)号：US08088232B2
公开(公告)日：2012-01-03
申请号：US11574469
申请日：2005-08-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
CPC分类号： C22C1/045 , B22F3/162 , B22F2003/248 , B22F2998/00 , B22F2998/10 , C22C27/04 , C23C14/3414 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10 , B22F3/16 , B22F3/24
摘要： Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor-Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
摘要翻译： 钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。 具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。 溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。 通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。 薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。
-
公开(公告)号：US20060042728A1
公开(公告)日：2006-03-02
申请号：US10931203
申请日：2004-08-31
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter Jepson , Prabhat Kumar , Steven Miller , Rong-Chein Wu , David Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter Jepson , Prabhat Kumar , Steven Miller , Rong-Chein Wu , David Schwartz
IPC分类号： C22F1/18
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emission Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
摘要翻译： 钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。 具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。 溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。 通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。 薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。
-
公开(公告)号：US20150136584A1
公开(公告)日：2015-05-21
申请号：US14608995
申请日：2015-01-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets comprising molybdenum are provided and sputtered to produce thin films comprising molybdenum. The sputtering targets may be formed by forming a tubular billet having an inner diameter IDI and an outer diameter ODI, the formation comprising pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet having an outer diameter ODf smaller than ODI, and heat treating the worked billet. The sputtering targets may have a substantially uniform texture of (a) a 110 orientation parallel to a longitudinal direction and (b) a 111 orientation parallel to a radial direction.
摘要翻译： 在各种实施例中，提供包含钼的管状溅射靶并溅射以产生包含钼的薄膜。 溅射靶可以通过形成具有内径IDI和外径ODI的管状坯料形成，所述管状坯料包括在模具中挤压钼粉末并烧结压制的钼粉末，对管坯进行加工以形成具有外径 直径ODf小于ODI，并对加工的坯料进行热处理。 溅射靶可以具有基本上均匀的织构（a）平行于纵向方向的110取向，和（b）平行于径向的111取向。
-
公开(公告)号：US09017600B2
公开(公告)日：2015-04-28
申请号：US13849918
申请日：2013-03-25
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet.
摘要翻译： 在各种实施例中，平面溅射靶通过至少通过在模具中压制钼粉末并烧结压粉，加工坯料以形成加工的坯料，热处理加工的坯料，加工加工的坯料以形成 最终坯料，并对最终坯料进行热处理。
-
公开(公告)号：US20140299466A1
公开(公告)日：2014-10-09
申请号：US14269836
申请日：2014-05-05
申请人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
发明人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F3/1017 , B22F2003/241 , B22F2003/247 , B22F2998/10 , C22C1/045 , B22F3/04 , B22F3/24
摘要： The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.
摘要翻译： 本发明涉及一种通过压制/烧结方法生产高密度难熔金属产品的方法。 本发明还涉及一种用于制造溅射靶和如此制造的溅射靶的方法。
-
公开(公告)号：US20080171215A1
公开(公告)日：2008-07-17
申请号：US11653816
申请日：2007-01-16
申请人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
发明人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
CPC分类号： C23C14/3414 , B22F3/1017 , B22F2003/241 , B22F2003/247 , B22F2998/10 , C22C1/045 , B22F3/04 , B22F3/24
摘要： The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.
摘要翻译： 本发明涉及一种通过压制/烧结方法生产高密度难熔金属产品的方法。 本发明还涉及一种用于制造溅射靶和如此制造的溅射靶的方法。
-
-
-
-
-
-
-
-
-
搜索结果
98 条记录 (耗时 0.028 秒)
