Abstract:
A material substituted with a group of formula (I): wherein: Ar1 is an aryl or heteroaryl group; Sp1 represents a first spacer group; n1 is 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; R1 independently in each occurrence is H or a substituent, with the proviso that at least one R1 is a group R11 selected from: alkyl comprising a tertiary carbon atom directly bound to a carbon atom of the cyclobutene ring of formula (I); branched alkyl wherein a secondary or tertiary carbon atom of the branched alkyl is spaced from a carbon atom of the cyclobutene ring of formula (I) by at least one —CH2— group; and alkyl comprising a cyclic alkyl group; or with the proviso that at least two R1 groups are linked to form a ring.
Abstract:
A composition comprising a first material substituted with at least one group of formula (I) and a second material substituted with at least one group selected from groups of formulae (IIa) and (IIb): wherein: Sp1 and Sp2 are spacer groups; NB independently in each occurrence is a norbornene group that may be unsubstituted or substituted with one or more substituents; n1 and n2 are 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; m2 is 1 if n2 is 0 and m2 is at least 1 if n2 is 1; Ar1 represents an aryl or heteroaryl group; R1 independently in each occurrence is H or a substituent; and * represents a point of attachment to the first or second material. The composition may be used to form a layer of an organic electronic device, for example the hole-transporting layer of an organic light-emitting device.
Abstract:
The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.
Abstract:
Charge Transfer Salt, Electronic Device and Method of Forming the Same A charge-transfer salt formed from a material comprising a unit of formula (I) and an n-dopant: wherein Ar1 is an arylene group; R1 is a substituent comprising at least one cyano group; n is at least 1; R2 is a substituent; and m is 0 or a positive integer. The material may be a polymer. The charge-transfer salt may be used as a layer of an organic electronic device.
Abstract:
A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.
Abstract:
The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.
Abstract:
A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.
Abstract:
A rectifier diode which does not emit light in operation comprises: an anode layer; a work function modification layer comprising a salt compound; an organic charge transport layer; an optional electron injection layer; and a cathode layer. Also provided is a method for producing the organic diode.
Abstract:
A method of forming an organic electronic device comprising the steps of: forming a surface modification layer comprising a partially fluorinated fullerene on at least part of a surface of at least one electrode of the device by depositing a solution comprising the partially fluorinated fullerene and at least one solvent onto the electrode surface; and forming an organic semiconductor layer comprising at least one organic semiconductor on the surface modification layer. The partially fluorinated fullerene is a partially fluorinated Buckminster fullerene, optionally a partially fluorinated C60.
Abstract:
A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable.