Organic Electronic Device And Method Of Manufacture
    19.
    发明申请
    Organic Electronic Device And Method Of Manufacture 审中-公开
    有机电子器件及其制造方法

    公开(公告)号:US20140299869A1

    公开(公告)日:2014-10-09

    申请号:US14355577

    申请日:2012-10-29

    Abstract: A method of forming an organic electronic device comprising the steps of: forming a surface modification layer comprising a partially fluorinated fullerene on at least part of a surface of at least one electrode of the device by depositing a solution comprising the partially fluorinated fullerene and at least one solvent onto the electrode surface; and forming an organic semiconductor layer comprising at least one organic semiconductor on the surface modification layer. The partially fluorinated fullerene is a partially fluorinated Buckminster fullerene, optionally a partially fluorinated C60.

    Abstract translation: 一种形成有机电子器件的方法,包括以下步骤:在器件的至少一个电极的至少一部分表面的至少一部分表面上形成包含部分氟化的富勒烯的表面改性层,该方法是将包含部分氟化的富勒烯和至少 一个溶剂在电极表面上; 以及在所述表面改性层上形成包含至少一种有机半导体的有机半导体层。 部分氟化的富勒烯是部分氟化的巴克明斯特富勒烯,任选地是部分氟化的C60。

    SURFACE MODIFICATION
    20.
    发明申请
    SURFACE MODIFICATION 审中-公开
    表面改性

    公开(公告)号:US20140217389A1

    公开(公告)日:2014-08-07

    申请号:US14250327

    申请日:2014-04-10

    Inventor: Thomas Kugler

    CPC classification number: H01L51/0003 C08J7/042 H01L51/0034 H01L51/0529

    Abstract: A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable.

    Abstract translation: 一种改性氟化聚合物表面的方法,包括以下步骤:在氟化聚合物表面的至少一部分上沉积第一层,第一层包含第一聚合物,第一聚合物是基本上全氟化的芳族聚合物; 以及在所述第一层的至少一部分上沉积第二层,所述第二层包含第二聚合物,所述第二聚合物是具有比所述第一聚合物低的氟化度的芳族聚合物,由此所述第二层提供表面 其具有比第一聚合物低的氟化度的物质,例如 非氟化物质是可沉积的。

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