Headphone
    11.
    外观设计

    公开(公告)号:USD585872S1

    公开(公告)日:2009-02-03

    申请号:US29300037

    申请日:2008-02-13

    申请人: Jong-bae Lee

    设计人: Jong-bae Lee

    MASK SET FOR MICROARRAY, METHOD OF FABRICATING MASK SET, AND METHOD OF FABRICATING MICROARRAY USING MASK SET
    13.
    发明申请
    MASK SET FOR MICROARRAY, METHOD OF FABRICATING MASK SET, AND METHOD OF FABRICATING MICROARRAY USING MASK SET 审中-公开
    用于微阵列的掩模设置,制作掩模组的方法以及使用掩模设置微阵列的方法

    公开(公告)号:US20080193863A1

    公开(公告)日:2008-08-14

    申请号:US12030647

    申请日:2008-02-13

    IPC分类号: G03F7/00 G03F1/00

    CPC分类号: G03F1/36 G03F1/00

    摘要: Provided are a mask set for in-situ synthesizing probes of a microarray, a method of fabricating the mask set, and a method of fabricating the microarray using the mask set. A mask set for a microarray includes a plurality of masks for in-situ synthesizing probes onto a substrate which includes an array of a plurality of probe cells, wherein each mask includes light-transmitting regions and light-blocking regions, each probe cell corresponds to a light-transmitting region or a light-blocking region, and a pattern of each light-transmitting region is corrected for an optical proximity effect.

    摘要翻译: 提供了用于原位合成微阵列探针的掩模组,制造掩模组的方法,以及使用掩模组制造微阵列的方法。 用于微阵列的掩模组包括多个掩模,用于在包括多个探针单元的阵列的基板上原位合成探针,其中每个掩模包括透光区域和遮光区域,每个探针单元对应于 光透射区域或遮光区域以及每个透光区域的图案被校正为光学邻近效应。

    Method and apparatus for designing fine pattern
    14.
    发明申请
    Method and apparatus for designing fine pattern 有权
    设计精细图案的方法和设备

    公开(公告)号:US20080082954A1

    公开(公告)日:2008-04-03

    申请号:US11590399

    申请日:2006-10-31

    IPC分类号: G06F17/50 G03F1/00

    CPC分类号: G03F1/36

    摘要: Provided are a method and apparatus for designing a fine pattern that can be entirely transferred onto an object. The method includes reading the original data of a fine pattern for exposure. The fine pattern is divided into a first pattern not requiring revision and a second pattern requiring revision. The fine pattern is revised by forming an auxiliary pattern maintaining a first distance D1 from the second pattern. A fine pattern to be transferred onto a target object is estimated by running an emulation program including a first auxiliary pattern and a second auxiliary pattern. The estimated fine pattern is compared to the original data of the fine pattern for exposure, and the revised fine pattern is designated as a final fine pattern if there is no difference between the estimated fine pattern and the original data of the fine pattern for exposure.

    摘要翻译: 提供了一种用于设计可以完全转印到物体上的精细图案的方法和装置。 该方法包括读取用于曝光的精细图案的原始数据。 精细图案分为不需要修改的第一图案和需要修订的第二图案。 通过形成保持与第二图案的第一距离D1的辅助图案来修改精细图案。 通过运行包括第一辅助图案和第二辅助图案的仿真程序来估计要转印到目标对象上的精细图案。 将估计的精细图案与用于曝光的精细图案的原始数据进行比较,并且如果估计的精细图案与用于曝光的精细图案的原始数据之间没有差异,则将修改的精细图案指定为最终精细图案。