Light emitting device
    11.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US08704252B2

    公开(公告)日:2014-04-22

    申请号:US12603929

    申请日:2009-10-22

    IPC分类号: H01L33/00

    CPC分类号: H01L33/06 H01L33/025

    摘要: This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.

    摘要翻译: 本发明公开了一种发光器件,其包括具有多量子阱(MQW)结构的有源层的半导体叠层层,其包括量子阱层和阻挡层的交替层叠层,其中阻挡层包括至少一个掺杂阻挡层和 一个未掺杂的阻挡层。 掺杂阻挡层可以改善电子空穴的载流子迁移率,增加有源层的发光面积和内部量子效率。

    Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof
    12.
    发明授权
    Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof 有权
    包括三维云结构的发光二极管装置及其制造方法

    公开(公告)号:US07902562B2

    公开(公告)日:2011-03-08

    申请号:US12222814

    申请日:2008-08-18

    IPC分类号: H01L33/32

    CPC分类号: H01L33/14

    摘要: A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

    摘要翻译: 提供了一种发光二极管器件(LED)器件及其制造方法,其中LED器件包括衬底,第一n型半导体层,n型三维电子云结构,第二n型半导体 层,有源层和p型半导体层。 随后,在基板上生长第一n型半导体层,n型三维电子云结构,第二n型半导体层,有源层和p型半导体层。

    LIGHT EMITTING DEVICE
    14.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20100102295A1

    公开(公告)日:2010-04-29

    申请号:US12603929

    申请日:2009-10-22

    IPC分类号: H01L33/00

    CPC分类号: H01L33/06 H01L33/025

    摘要: This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.

    摘要翻译: 本发明公开了一种发光器件,其包括具有多量子阱(MQW)结构的有源层的半导体叠层层,其包括量子阱层和阻挡层的交替层叠层,其中阻挡层包括至少一个掺杂阻挡层和 一个未掺杂的阻挡层。 掺杂阻挡层可以改善电子空穴的载流子迁移率,增加有源层的发光面积和内部量子效率。

    Liquid crystal display panel with reflective spacers and liquid crystal display device using the same
    15.
    发明申请
    Liquid crystal display panel with reflective spacers and liquid crystal display device using the same 有权
    具有反射间隔物的液晶显示面板和使用其的液晶显示装置

    公开(公告)号:US20080106688A1

    公开(公告)日:2008-05-08

    申请号:US11982863

    申请日:2007-11-05

    申请人: Yu-Pin Hsu

    发明人: Yu-Pin Hsu

    IPC分类号: G02F1/1339

    摘要: An exemplary liquid crystal display panel (20) includes a pair of substrates (210, 220) spaced from each other in a vertical direction, a liquid crystal layer (230) sandwiched between the substrates, a plurality of spacers (250) evenly distributed between the substrates to resist compression forces in the vertical direction, and a plurality of pixel regions. Each of the pixel regions defines a reflection region and a transmission region, and each of the spacers includes a reflective layer (252).

    摘要翻译: 示例性液晶显示面板(20)包括在垂直方向上彼此间隔开的一对基板(210,220),夹在基板之间的液晶层(230),均匀地分布在基板 用于抵抗垂直方向上的压缩力的基板和多个像素区域。 每个像素区域限定反射区域和透射区域,并且每个间隔物包括反射层(252)。