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公开(公告)号：US20120037955A1
公开(公告)日：2012-02-16
申请号：US13197903
申请日：2011-08-04
IPC分类号： H01L27/06
CPC分类号： H01L21/26506 , H01L21/26513 , H01L29/04 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/165 , H01L29/167 , H01L29/32 , H01L29/7397 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.
摘要翻译： 晶体管部件在半导体本体中包括源极区和第一导电类型的漂移区，以及与第一导电类型互补的第二导电类型的体区，布置在漂移区和源极区之间的体区。 所述晶体管部件还包括与所述源极区域和所述主体区域接触的源极电极，与所述主体区域相邻的栅极电极，并且通过栅极介电层与所述主体区域介电绝缘，以及连接在所述漂移区域 源电极。 二极管结构包括与半导体主体中的漂移区相邻的第一发射区和与第一发射区邻接的第一导电类型的第二发射极区。 第二发射极区域与源极连接，发射极效率γ小于0.7。
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公开(公告)号：US07541660B2
公开(公告)日：2009-06-02
申请号：US11379492
申请日：2006-04-20
申请人： Hans-Joachim Schulze , Frank Hille , Thomas Raker
发明人： Hans-Joachim Schulze , Frank Hille , Thomas Raker
IPC分类号： H01L23/58
CPC分类号： H01L29/0615 , H01L29/1095 , H01L29/7395 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A The semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.
摘要翻译： A半导体器件具有重掺杂衬底和设置在衬底上的具有第一导电类型的掺杂硅的上层，上层具有上表面并且包括有源区，该有源区包括第二相反导电类型的阱区 。 边缘终止区域具有第二导电类型的连接终止延伸区域（JTE）区域，该区域具有远离阱区域延伸的部分，以及设置在连接终端的上表面处的第二导电类型的多个场限制环 延伸区域。
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公开(公告)号：US20070246791A1
公开(公告)日：2007-10-25
申请号：US11379492
申请日：2006-04-20
申请人： Hans-Joachim Schulze , Frank Hille , Thomas Raker
发明人： Hans-Joachim Schulze , Frank Hille , Thomas Raker
IPC分类号： H01L23/58
CPC分类号： H01L29/0615 , H01L29/1095 , H01L29/7395 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A The semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.
摘要翻译： A半导体器件具有重掺杂衬底和设置在衬底上的具有第一导电类型的掺杂硅的上层，上层具有上表面并且包括有源区，该有源区包括第二相反导电类型的阱区 。 边缘终止区域具有第二导电类型的连接终止延伸区域（JTE）区域，该区域具有远离阱区域延伸的部分，以及设置在连接终端的上表面处的第二导电类型的多个场限制环 延伸区域。
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公开(公告)号：US09105682B2
公开(公告)日：2015-08-11
申请号：US13036088
申请日：2011-02-28
IPC分类号： H01L29/739 , H01L29/744 , H01L29/06 , H01L29/10 , H01L29/861 , H01L29/87
CPC分类号： H01L29/744 , H01L29/0607 , H01L29/1016 , H01L29/8611 , H01L29/87
摘要： Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.
摘要翻译： 公开了一种半导体部件，其包括半导体本体，在半导体主体中具有第一导电类型的第一发射极区域，在半导体主体的垂直方向上与第一发射极区域间隔开的第二导电类型的第二发射极区域， 布置在第一发射极区域和第二发射极区域之间的一种导电类型的基极区域以及与基极区域相同导电类型的至少两个较高掺杂区域并且布置在基极区域中。 所述至少两个较高掺杂区域在所述半导体主体的横向方向上彼此间隔开，并且仅通过所述基极区域的一部分彼此分离。
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公开(公告)号：US20120217539A1
公开(公告)日：2012-08-30
申请号：US13036088
申请日：2011-02-28
IPC分类号： H01L29/739 , H01L29/74 , H01L29/861
CPC分类号： H01L29/744 , H01L29/0607 , H01L29/1016 , H01L29/8611 , H01L29/87
摘要： Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.
摘要翻译： 公开了一种半导体部件，其包括半导体本体，在半导体主体中具有第一导电类型的第一发射极区域，在半导体主体的垂直方向上与第一发射极区域间隔开的第二导电类型的第二发射极区域， 布置在第一发射极区域和第二发射极区域之间的一种导电类型的基极区域以及与基极区域相同导电类型的至少两个较高掺杂区域并且布置在基极区域中。 所述至少两个较高掺杂区域在所述半导体主体的横向方向上彼此间隔开，并且仅通过所述基极区域的一部分彼此分离。
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公开(公告)号：US20120098097A1
公开(公告)日：2012-04-26
申请号：US12908562
申请日：2010-10-20
IPC分类号： H01L27/082 , H01L27/06
CPC分类号： H01L29/7395 , H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.
摘要翻译： 提供IGBT模块。 所述IGBT模块具有至少第一单独的IGBT，所述第一单独IGBT在关断所述IGBT模块期间具有第一柔性，以及至少第二独立IGBT并联连接至所述至少一个第一IGBT。 所述至少一个第二单独IGBT在关断IGBT模块期间具有与第一柔性不同的第二柔软度。 此外，提供了并联连接的具有两个单独的IGBT的电路和电子功率器件。
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公开(公告)号：US07768093B2
公开(公告)日：2010-08-03
申请号：US12403808
申请日：2009-03-13
申请人： Hans-Joachim Schulze , Frank Hille , Thomas Raker
发明人： Hans-Joachim Schulze , Frank Hille , Thomas Raker
IPC分类号： H01L23/58
CPC分类号： H01L29/0615 , H01L29/1095 , H01L29/7395 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.
摘要翻译： 半导体器件具有重掺杂衬底，并且具有设置在衬底上的具有第一导电类型的掺杂硅的上层，上层具有上表面并且包括具有第二相反导电类型的阱区的有源区。 边缘终止区域具有第二导电类型的连接终止延伸区域（JTE）区域，该区域具有远离阱区域延伸的部分，以及设置在连接终端的上表面处的第二导电类型的多个场限制环 延伸区域。
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18.发明申请SEMICONDUCTOR DEVICE WITH SWITCH ELECTRODE AND GATE ELECTRODE AND METHOD FOR SWITCHING A SEMICONDUCTOR DEVICE 有权具有开关电极和栅极电极的半导体器件和用于切换半导体器件的方法公开(公告)号：US20090289690A1
公开(公告)日：2009-11-26
申请号：US12125496
申请日：2008-05-22
申请人： Franz Hirler , Thomas Raker
发明人： Franz Hirler , Thomas Raker
IPC分类号： H03K17/687 , H01L29/739
CPC分类号： H01L29/7397 , H01L29/4236 , H03K17/567 , H03K2217/0036
摘要： A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed between the emitter and the body region while the body region is formed between the drift and the source region. A first trench structure extends from the source region at least partially into the drift region. The first trench structure includes a gate electrode arranged next to the body region and a switch electrode arranged in portions next to the drift region, wherein the switch and gate electrodes are electrically insulated from each other in the trench structure. A first gate driver is electrically connected to the gate electrode while a second gate driver is electrically connected to the switch gate.
摘要翻译： 具有开关电极和栅电极的半导体器件和用于切换半导体器件的方法。 一个实施例提供具有发射极区域，漂移区域，体区域和源极区域的半导体衬底。 漂移区形成在发射体和体区之间，同时在漂移和源区之间形成体区。 第一沟槽结构至少部分地从源极区域延伸到漂移区域中。 第一沟槽结构包括邻近体区布置的栅电极和布置在漂移区旁边的部分的开关电极，其中开关和栅电极在沟槽结构中彼此电绝缘。 第一栅极驱动器电连接到栅电极，而第二栅极驱动器电连接到开关栅极。
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