公开(公告)号：US20120153280A1

公开(公告)日：2012-06-21

申请号：US13041003

申请日：2011-03-04

Applicant: Dae-Suk KIM ,  Jong-Chern LEE ,  Chul KIM

Inventor： Dae-Suk KIM ,  Jong-Chern LEE ,  Chul KIM

IPC: H01L23/52

CPC classification number: H01L22/34 ,  G01R31/2853 ,  G01R31/2884 ,  H01L23/481 ,  H01L24/05 ,  H01L2225/06544 ,  H01L2225/06596 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

Abstract: An integrated circuit that detects whether a through silicon via has defects or not, at a wafer level. The integrated circuit includes a semiconductor substrate, a through silicon via configured to be formed in the semiconductor substrate to extend to a certain depth from the surface of the semiconductor substrate, an output pad, and a current path providing unit configured to provide a current, flowing between the semiconductor substrate and the through silicon via, to the output pad during a test mode.

Abstract translation: 在晶圆级别检测贯通硅通孔是否具有缺陷的集成电路。 集成电路包括：半导体衬底;通孔构造成形成在半导体衬底中以从半导体衬底的表面延伸到一定深度的通硅通孔，输出焊盘和电流通路提供单元，其被配置为提供电流， 在测试模式期间，在半导体衬底和贯穿硅通孔之间流动到输出焊盘。

公开(公告)号：US20120025900A1

公开(公告)日：2012-02-02

申请号：US12911138

申请日：2010-10-25

Applicant: Chul KIM

Inventor： Chul KIM

IPC: G05F1/10

CPC classification number: G11C11/4074 ,  G11C5/143 ,  G11C5/147

Abstract: A semiconductor device includes a first internal voltage driving unit configured to drive an internal voltage, a second internal voltage driving unit configured to drive the internal voltage in an operation period corresponding to an enable signal, a current amount detection unit configured to detect amount of current supplied by the first internal voltage driving unit, and a current amount comparison unit configured to compare the amount of detected current by the current amount detection unit with amount of a reference current, and determine whether or not to activate the enable signal in response to a comparison result.

Abstract translation: 一种半导体器件，包括：被配置为驱动内部电压的第一内部电压驱动单元，配置成在与使能信号对应的运行期间内驱动内部电压的第二内部电压驱动单元，被配置为检测电流量的电流量检测单元 由第一内部电压驱动单元提供的电流量比较单元，以及电流量比较单元，被配置为将当前量检测单元的检测电流量与参考电流的量进行比较，并且确定是否响应于 比较结果。

公开(公告)号：US20110156673A1

公开(公告)日：2011-06-30

申请号：US12716836

申请日：2010-03-03

Applicant: Chul KIM

Inventor： Chul KIM

IPC: G05F1/10

CPC classification number: G05F1/575

Abstract: A semiconductor device includes an enable unit configured to enable an output terminal, a feedback unit configured to receive an output of the output terminal and output a feedback signal, an amplifying unit configured to amplify a difference between a reference signal and the feedback signal, and a transfer unit configured to transfer an amplified signal of the amplifying unit as an enable control signal of the enable unit, and to have an output resistance value smaller than an output resistance value of the amplifying unit.

Abstract translation: 半导体器件包括：使能单元，被配置为使能输出端子;反馈单元，被配置为接收输出端子的输出并输出反馈信号;放大单元，被配置为放大参考信号和反馈信号之间的差;以及 传送单元，被配置为传送放大单元的放大信号作为使能单元的使能控制信号，并且具有小于放大单元的输出电阻值的输出电阻值。