Abstract:
Provided are semiconductor devices that include an active pattern on a substrate, first and second gate electrodes on the active pattern and arranged in a first direction relative to one another and a first source/drain region in a first trench that extends into the active pattern between the first and second gate electrodes. The first source/drain region includes a first epitaxial layer that is configured to fill the first trench and that includes at least one plane defect that originates at a top portion of the first epitaxial layer and extends towards a bottom portion of the first epitaxial layer.
Abstract:
An impedance calibration apparatus of a semiconductor integrated circuit includes: a D/A conversion unit configured to receive a code and generate an analog voltage depending on the code; a virtual code voltage generation unit configured to detect a level of the analog voltage and generate a plurality of virtual code voltages based on the level of the analog voltage; a comparison unit configured to receive the plurality of virtual code voltages and a reference voltage as inputs, and compare the plurality of virtual code voltages with the reference voltage to generate a plurality of comparison signals; and a code generation unit configured to receive the plurality of comparison signals and generate the code using the plurality of comparison signals.
Abstract:
A display device includes: a first insulation substrate having an upper surface and a lower surface; a transparent conductive layer disposed on the upper surface of the first insulation substrate; a gate line disposed on the lower surface of the first insulation substrate; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and connected to a source electrode and a drain electrode facing the source electrode; and a pixel electrode electrically connected to the drain electrode, where the gate line, the gate insulating layer, the semiconductor layer and the data line are sequentially disposed on the lower surface of the first insulation substrate.
Abstract:
A display device includes a first substrate including a first surface, on which a touch by an external object occurs, and a second surface opposite to the first surface, a plurality of driving signal lines positioned on the second surface of the first substrate, where the plurality of driving signal lines transmits a driving signal for displaying an image, a plurality of pixels including a plurality of switching elements connected to the plurality of driving signal lines, a sensing signal line positioned on one of the first surface and the second surface of the first substrate, where the sensing signal line transmits a sensing signal generated based on the touch by the external object, and a touch sensor unit including a sensing capacitor defined by at least one driving signal line of the plurality of driving signal lines and the sensing signal line.
Abstract:
A semiconductor apparatus comprises of a first semiconductor chip having a through silicon via (TSV) and a second semiconductor chip also having a TSV, wherein the respective semiconductor chips are stacked vertically and are connected through a conductive connection member without the assistance of an additional bump between the conductive connection member and the second semiconductor chip.
Abstract:
A method of driving a touch display panel includes sequentially providing gate signals to a plurality of gate lines, outputting data signals to a plurality of data lines, the data lines being disposed on the first surface and crossing the gate lines, and reading out a first sensing signal through a plurality of sensing lines in response to the gate signals. The gate lines are disposed on a first surface of a base substrate, the touch display panel including the base substrate. The data signals are synchronized with the gate signals. The sensing line is disposed on a second surface of the base substrate, the second surface being opposite to the first surface.
Abstract:
In a semiconductor apparatus, a plurality of semiconductor chips including through-silicon vias are stacked in a vertical direction, wherein the through-silicon via formed in each semiconductor chip protrudes beyond heights of each semiconductor chip.
Abstract:
A display device includes: a first display panel; a second display panel opposite to the first display panel; and an electro-optical active layer between the first display panel and the second display panel, wherein the first display panel includes a thin film transistor including a gate electrode, a source electrode, a drain electrode and a semiconductor layer, a gate line configured to transmit a gate signal to the gate electrode of the transistor and extending in a first direction, and a sensing electrode extending in the first direction and overlapping the gate line, where the sensing electrode and the gate electrode define a capacitor.
Abstract:
A semiconductor apparatus includes a first structural body including a first temperature voltage generation unit configured to generate first and second temperature voltages which have different voltage level variations according to a temperature variation, in response to a temperature measurement command, and a first temperature information determination unit configured to generate first temperature information depending on a difference between levels of the first and second temperature voltages; and a second structural body including a second temperature voltage generation unit configured to generate a third temperature voltage and a fourth temperature voltage which have different voltage level variations according to a temperature variation, when a predetermined time elapses after the first and second temperature voltages are generated from the first structural body, and a second temperature information determination unit configured to generate second temperature information depending on a difference between levels of the third and fourth temperature voltages.
Abstract:
A touch panel is provided that includes: a substrate; a plurality of X-axis lines disposed on the substrate; a plurality of Y-axis lines crossing the plurality of X-axis lines; and an insulating layer interposed between the X-axis lines and the Y-axis lines, in which at least one first X-axis line and at least one second X-axis line selected from among the plurality of X-axis lines are connected by a first connection portion, and among the plurality of Y-axis lines, a Y-axis line crossing the first X-axis line and the second X-axis line has a first area in a region where the Y-axis line overlaps the first X-axis line and a second area in a region where the Y-axis line overlaps the second X-axis line, and the first area and the second area are different from each other.