利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

167 条记录 (耗时 0.036 秒)

    Electronically programmable antifuse and circuits made therewith
    11.
    发明授权
    Electronically programmable antifuse and circuits made therewith 有权
    电子可编程反熔丝和由其制成的电路

    公开(公告)号：US07687883B2

    公开(公告)日：2010-03-30

    申请号：US11627723

    申请日：2007-01-26

    申请人： John A. Fifield ,  Wagdi W. Abadeer ,  William R. Tonti

    发明人： John A. Fifield ,  Wagdi W. Abadeer ,  William R. Tonti

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).

    摘要翻译： 一种反熔丝装置（120），其包括彼此串联布置的偏置元件（124）和可编程反熔丝元件（128），以形成具有位于偏置和反熔丝元件之间的输出节点（F）的分压器。 当反熔丝装置处于其未编程状态时，偏置元件和反熔丝元件中的每一个都是不导电的。 当反熔丝装置处于其编程状态时，偏置元件保持不导电，但是反熔丝元件是导电的。 反熔丝元件在其未编程状态和编程状态之间的电阻差异导致当在反熔断器件上施加1V的电压时，在输出节点处看到的电压差为几百微升。 该电压差非常高以至于可以使用简单的感测电路（228）容易地感测。

    PERFORMANCE INVERSION DETECTION CIRCUIT AND A DESIGN STRUCTURE FOR THE SAME
    14.
    发明申请
    PERFORMANCE INVERSION DETECTION CIRCUIT AND A DESIGN STRUCTURE FOR THE SAME 审中-公开
    性能反相检测电路及其设计结构

    公开(公告)号：US20090179670A1

    公开(公告)日：2009-07-16

    申请号：US12014430

    申请日：2008-01-15

    申请人： Albert M. Chu ,  John A. Fifield ,  Daryl M. Seitzer ,  Hongfei Wu

    发明人： Albert M. Chu ,  John A. Fifield ,  Daryl M. Seitzer ,  Hongfei Wu

    IPC分类号： H03F3/45

    CPC分类号： H03F3/45475 ,  H03F2200/447 ,  H03F2203/45586 ,  H03F2203/45618 ,  H03F2203/45622

    摘要： A circuit containing a parallel connection of a first sub-circuit and a second sub-circuit is provided. The first sub-circuit comprises a serial connection of a first field effect transistor having a first threshold voltage and a first voltage dividing device. The second sub-circuit comprises a serial connection of a second field effect transistor having a second threshold voltage, which is different from the first threshold voltage, and a second voltage dividing device. The voltage between the first field effect transistor and the first voltage dividing device is compared with the voltage between the second field effect transistor and the second voltage dividing device so that a signal may be generated at a temperature at which the ratio of a performance parameter such as on-current between the first and second field effect transistors crosses over a predefined value. The signal may be advantageously employed to actively control circuit characteristics.

    摘要翻译： 提供了包含第一子电路和第二子电路的并联连接的电路。 第一子电路包括具有第一阈值电压的第一场效应晶体管和第一分压装置的串联连接。 第二子电路包括具有与第一阈值电压不同的第二阈值电压的第二场效应晶体管的串联连接和第二分压装置。 将第一场效应晶体管和第一分压装置之间的电压与第二场效应晶体管和第二分压装置之间的电压进行比较，使得可以在这样的温度下产生信号， 因为第一和第二场效应晶体管之间的导通电流跨越预定值。 可以有利地使用该信号来主动地控制电路特性。

    Voltage Pump Circuit with an Oxide Stress Control Mechanism for use in High-Voltage Applications in an Integrated Circuit
    15.
    发明申请
    Voltage Pump Circuit with an Oxide Stress Control Mechanism for use in High-Voltage Applications in an Integrated Circuit 审中-公开
    具有用于集成电路中的高压应用的氧化物应力控制机构的电压泵电路

    公开(公告)号：US20090033408A1

    公开(公告)日：2009-02-05

    申请号：US12242233

    申请日：2008-09-30

    申请人： John A. Fifield

    发明人： John A. Fifield

    IPC分类号： G05F1/10

    CPC分类号： H02M3/07 ,  G11C5/145 ,  H03K17/063 ,  H03K17/08142 ,  H03K17/6872 ,  H03K2217/0027

    摘要： A voltage pump circuit that has an oxide stress control mechanism is disclosed. In particular, the oxide stress control mechanism of the voltage pump circuit ensures a safe transistor gate-to-source voltage in high-voltage applications in an integrated circuit. In particular, the down level of the gate voltage of the output transistor may be conditionally limited. For example, an offset in the down level of the gate voltage is created by conditionally developing an offset voltage in the lower rail voltage of the gate driver. The offset voltage is created by directing a predetermined current through a resistance. The current is conditional such that the current is about zero when the power supply voltage is less than or equal to a predetermined level, and the current is greater than zero when the power supply voltage is greater than a predetermined level.

    摘要翻译： 公开了具有氧化物应力控制机构的电压泵电路。 特别地，电压泵电路的氧化物应力控制机构确保在集成电路中的高压应用中的安全的晶体管栅极 - 源极电压。 特别地，可以有条件地限制输出晶体管的栅极电压的下降电平。 例如，栅极电压的下降电平的偏移是通过有选择地在栅极驱动器的较低轨道电压中产生偏移电压来产生的。 通过引导预定电流通过电阻产生偏移电压。 电流是有条件的，使得当电源电压小于或等于预定电平时电流约为零，当电源电压大于预定电平时，电流大于零。

    Programmable Locking Mechanism For Secure Applications In An Integrated Circuit
    18.
    发明申请
    Programmable Locking Mechanism For Secure Applications In An Integrated Circuit 审中-公开
    可编程锁定机制，用于集成电路中的安全应用

    公开(公告)号：US20080155151A1

    公开(公告)日：2008-06-26

    申请号：US11615137

    申请日：2006-12-22

    申请人： John A. Fifield ,  Steven F. Oakland ,  Michael R. Ouellette

    发明人： John A. Fifield ,  Steven F. Oakland ,  Michael R. Ouellette

    IPC分类号： G06F21/00

    CPC分类号： G06K19/073 ,  G06K19/07309

    摘要： A programmable locking mechanism for use in an integrated circuit is disclosed. In particular, the programmable locking mechanism may include an access code storage circuit for storing a security access code and a code input register whose outputs feed a comparator circuit that generates a locking signal. The state of the locking signal depends on whether the contents of the access code storage circuit and the code input register match. Additionally, a blocking circuit is provided that interrupts a programming input to the access code storage circuit and, thus, allows or denies access via the programming input to the access code storage circuit depending on the state of the locking signal. Additionally, the locking signal is distributed to sensitive logic circuits within the integrated circuit for preventing and/or allowing (depending on state) access thereto.

    摘要翻译： 公开了一种用于集成电路的可编程锁定机构。 特别地，可编程锁定机构可以包括用于存储安全访问代码的访问代码存储电路和其输出馈送产生锁定信号的比较器电路的代码输入寄存器。 锁定信号的状态取决于访问代码存储电路和代码输入寄存器的内容是否匹配。 此外，提供一种阻塞电路，其中断对访问代码存储电路的编程输入，并且因此根据锁定信号的状态允许或拒绝通过对访问代码存储电路的编程输入的访问。 此外，锁定信号被分配到集成电路内的敏感逻辑电路，用于防止和/或允许（取决于状态）对其的访问。

    Low Voltage Reference System
    19.
    发明申请
    Low Voltage Reference System 审中-公开
    低电压参考系统

    公开(公告)号：US20080129271A1

    公开(公告)日：2008-06-05

    申请号：US11566503

    申请日：2006-12-04

    申请人： John A. Fifield

    发明人： John A. Fifield

    IPC分类号： G05F3/16

    CPC分类号： G05F3/30

    摘要： A voltage reference system that generates a stable reference voltage at varying supply voltages. The system receiving an input voltage and having a voltage pumping circuit that provides a power supply, regulated by a regulator circuit, to a bandgap reference circuit. The bandgap reference circuit generating a first output as a stable voltage value and delivering the first output to a clamping circuit which outputs the lesser of the stable voltage value and a fraction of the input voltage.

    摘要翻译： 电压参考系统，可在变化的电源电压下产生稳定的参考电压。 该系统接收一输入电压，并具有电压泵电路，提供了一个电源，由一个调节器电路调节，以带隙基准电路。 带隙基准电路产生第一输出作为一个稳定的电压值和所述第一输出输送到钳位电路，其输出稳定电压值和所述输入电压的一小部分中的较小者。